Memory Devices: Resistive Switching Behavior in Organic-Inorganic Hybrid CH3NH3PbI3−xClxPerovskite for Resistive Random Access Memory Devices (Adv. Mater. 40/2015)

2015 ◽  
Vol 27 (40) ◽  
pp. 6303-6303 ◽  
Author(s):  
Eun Ji Yoo ◽  
Miaoqiang Lyu ◽  
Jung-Ho Yun ◽  
Chi Jung Kang ◽  
Young Jin Choi ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Inorganic Hybrid

Unconventional resistive switching behavior in ferroelectric tunnel junctions

2015 ◽  
Vol 17 (15) ◽  
pp. 10146-10150 ◽  
Author(s):  
H. J. Mao ◽  
C. Song ◽  
L. R. Xiao ◽  
S. Gao ◽  
B. Cui ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Tunnel Junctions ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Memory Devices ◽  
Access Memory ◽  
Resistive Switching Behavior

An unconventional resistive switching behavior is observed in ferroelectric tunnel junctions, which builds a bridge between ferroelectric tunnel junctions and resistive random access memory devices.

scholarly journals Bipolar Resistive Switching Behavior of PVP-GQD/HfOx/ITO/Graphene Hybrid Flexible Resistive Random Access Memory

Molecules ◽  
2021 ◽  
Vol 26 (22) ◽  
pp. 6758
Author(s):  
Jin Mo Kim ◽  
Sung Won Hwang
Keyword(s):  
Quantum Dots ◽  
Active Layer ◽  
Resistive Switching ◽  
Graphene Quantum Dots ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Resistive Switching Behavior

We have investigated highly flexible memristive devices using reduced graphene oxide (RGO) nanosheet nanocomposites with an embedded GQD Layer. Resistive switching behavior of poly (4-vinylphenol):graphene quantum dot (PVP:GQD) composite and HfOx hybrid bilayer was explored for developing flexible resistive random access memory (RRAM) devices. A composite active layer was designed based on graphene quantum dots, which is a low-dimensional structure, and a heterogeneous active layer of graphene quantum dots was applied to the interfacial defect structure to overcome the limitations. Increasing to 0.3–0.6 wt % PVP-GQD, Vf changed from 2.27–2.74 V. When negative deflection is applied to the lower electrode, electrons travel through the HfOx/ITO interface. In addition, as the PVP-GQD concentration increased, the depth of the interfacial defect decreased, and confirmed the repetition of appropriate electrical properties through Al and HfOx/ITO. The low interfacial defects help electrophoresis of Al+ ions to the PVP GQD layer and the HfOx thin film. A local electric field increase occurred, resulting in the breakage of the conductive filament in the defect.

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