scholarly journals 570 mV photovoltage, stabilized n-Si/CoOxheterojunction photoanodes fabricated using atomic layer deposition

2016 ◽  
Vol 9 (3) ◽  
pp. 892-897 ◽  
Author(s):  
Xinghao Zhou ◽  
Rui Liu ◽  
Ke Sun ◽  
Kimberly M. Papadantonakis ◽  
Bruce S. Brunschwig ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Water Oxidation ◽  
High Performance ◽  
Atomic Layer ◽  
Layer Deposition

Deposition of a 50 nm thick CoOxlayer on planar n-Si yields stable, high-performance photoanodes for water oxidation.

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

Ozone-Based Atomic Layer Deposition of Crystalline V2O5 Films for High Performance Electrochemical Energy Storage

2012 ◽  
Vol 24 (7) ◽  
pp. 1255-1261 ◽  
Author(s):  
Xinyi Chen ◽  
Ekaterina Pomerantseva ◽  
Parag Banerjee ◽  
Keith Gregorczyk ◽  
Reza Ghodssi ◽  
...  
Keyword(s):  
Energy Storage ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electrochemical Energy Storage ◽  
Layer Deposition ◽  
Electrochemical Energy

scholarly journals Correction: Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2on fluorine-doped tin oxide nanoparticle films

Nanoscale ◽  
2015 ◽  
Vol 7 (28) ◽  
pp. 12226-12226 ◽  
Author(s):  
Isvar A. Cordova ◽  
Qing Peng ◽  
Isa L. Ferrall ◽  
Adam J. Rieth ◽  
Paul G. Hoertz ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Water Oxidation ◽  
Atomic Layer ◽  
Nanoparticle Films ◽  
Layer Deposition ◽  
Oxide Nanoparticle ◽  
Photoelectrochemical Water Oxidation

scholarly journals Atomic layer deposition triggered Fe-In-S cluster and gradient energy band in ZnInS photoanode for improved oxygen evolution reaction

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Linxing Meng ◽  
Jinlu He ◽  
Xiaolong Zhou ◽  
Kaimo Deng ◽  
Weiwei Xu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxygen Evolution ◽  
Oxygen Evolution Reaction ◽  
Energy Band ◽  
High Performance ◽  
Carrier Transport ◽  
Atomic Layer ◽  
Onset Potential ◽  
Layer Deposition ◽  
Gradient Energy

AbstractVast bulk recombination of photo-generated carriers and sluggish surface oxygen evolution reaction (OER) kinetics severely hinder the development of photoelectrochemical water splitting. Herein, through constructing a vertically ordered ZnInS nanosheet array with an interior gradient energy band as photoanode, the bulk recombination of photogenerated carriers decreases greatly. We use the atomic layer deposition technology to introduce Fe-In-S clusters into the surface of photoanode. First-principles calculations and comprehensive characterizations indicate that these clusters effectively lower the electrochemical reaction barrier on the photoanode surface and promote the surface OER reaction kinetics through precisely affecting the second and third steps (forming processes of O* and OOH*) of the four-electron reaction. As a result, the optimal photoanode exhibits the high performance with a significantly enhanced photocurrent of 5.35 mA cm−2 at 1.23 VRHE and onset potential of 0.09 VRHE. Present results demonstrate a robust platform for controllable surface modification, nanofabrication, and carrier transport.

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