scholarly journals Correction: Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2on fluorine-doped tin oxide nanoparticle films

Nanoscale ◽  
2015 ◽  
Vol 7 (28) ◽  
pp. 12226-12226 ◽  
Author(s):  
Isvar A. Cordova ◽  
Qing Peng ◽  
Isa L. Ferrall ◽  
Adam J. Rieth ◽  
Paul G. Hoertz ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Water Oxidation ◽  
Atomic Layer ◽  
Nanoparticle Films ◽  
Layer Deposition ◽  
Oxide Nanoparticle ◽  
Photoelectrochemical Water Oxidation

Enhanced photoelectrochemical water oxidation via atomic layer deposition of TiO2 on fluorine-doped tin oxide nanoparticle films

Nanoscale ◽  
2015 ◽  
Vol 7 (18) ◽  
pp. 8584-8592 ◽  
Author(s):  
Isvar A. Cordova ◽  
Qing Peng ◽  
Isa L. Ferrall ◽  
Adam J. Rieth ◽  
Paul G. Hoertz ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Water Oxidation ◽  
Atomic Layer ◽  
Solution Processing ◽  
Nanoparticle Films ◽  
Layer Deposition ◽  
Oxide Nanoparticle ◽  
Conversion Efficiencies ◽  
Photoelectrochemical Water Oxidation

In this study, nanostructured photoanodes with heightened photoelectrochemical conversion efficiencies were synthesized by atomic layer deposition (ALD) of TiO2 onto a fluorine-doped tin oxide nanoparticle (nanoFTO) scaffold fabricated by solution processing.

Conformal SnOx heterojunction coatings for stabilized photoelectrochemical water oxidation using arrays of silicon microcones

2020 ◽  
Vol 8 (18) ◽  
pp. 9292-9301
Author(s):  
Ivan A. Moreno-Hernandez ◽  
Sisir Yalamanchili ◽  
Harold J. Fu ◽  
Harry A. Atwater ◽  
Bruce S. Brunschwig ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Oxide Layer ◽  
Tin Oxide ◽  
Water Oxidation ◽  
Surface Recombination ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Photoelectrochemical Water Oxidation

A protective tin oxide layer formed by atomic-layer deposition limits surface recombination at n-Si surfaces and produces ∼620 mV of photovoltage on planar n-Si photoanodes. The layer conformally coats structures such as Si microcone arrays.

Passivation of surface states by ALD-grown TiO2 overlayers on Ta3N5 anodes for photoelectrochemical water oxidation

2016 ◽  
Vol 52 (57) ◽  
pp. 8806-8809 ◽  
Author(s):  
Peng Zhang ◽  
Tuo Wang ◽  
Jinlong Gong
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Water Oxidation ◽  
Surface States ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Photoelectrochemical Water Oxidation

This paper describes the fabrication of TiO2 overlayers by atomic layer deposition to passivate the surface states on Ta3N5 thin film anodes for photoelectrochemical water oxidation.

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

2021 ◽  
pp. 1-6
Author(s):  
Zhuocheng Zhang ◽  
Yaoqiao Hu ◽  
Zehao Lin ◽  
Mengwei Si ◽  
Adam Charnas ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of Lithium-Silicon-Tin Oxide Nanofilms for High Performance Thin Film Batteries Anodes

2020 ◽  
Vol 299 ◽  
pp. 1058-1063
Author(s):  
Denis Nazarov ◽  
Ilya Mitrofanov ◽  
Maxim Yu. Maximov
Keyword(s):  
Thin Film ◽  
Stainless Steel ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Cycling Performance ◽  
Spectral Ellipsometry ◽  
X Ray ◽  
Layer Deposition

Tin oxide is the most promising material for thin film anodes of Li-ion batteries due to its cycling performance and high theoretical capacity. It is assumed that lithium-tin oxide can demonstrate even higher performance. Lithium-silicon-tin oxide nanofilms were prepared by atomic layer deposition (ALD), using the lithium bis (trimethylsilyl) amide (LiHMDS), tetraethyltin (TET) as a metal containing reagents and ozone or water or oxygen plasma as counter-reactants. Monocrystalline silicon (100) and stainless steel (316SS) were used as supports. The thicknesses of the nanofilms were measured by spectral ellipsometry (SE) and scanning electron microscopy (SEM). It was found that oxygen plasma is the most optimal ALD counter-reactant. The composition and structure were studied by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), X-ray Photoelectron Spectroscopy (XPS) and X-ray diffraction (XRD). The nanofilms contain silicon as impurity, whose source is the ALD precursor (LiHMDS). The nanofilms deposited on stainless steel have shown the high Coulombic efficiency (99.1-99.8%) and cycling performance at a relatively high voltage (0.01 to 2.0V).

Silicon Nanoparticle Films Infilled with Al2O3 Using Atomic Layer Deposition for Photosensor, Light Emission, and Photovoltaic Applications

2020 ◽  
Vol 3 (6) ◽  
pp. 5033-5044 ◽  
Author(s):  
Alexandre M. P. Botas ◽  
Joaquim P. Leitão ◽  
Bruno P. Falcão ◽  
Markus Wiesinger ◽  
Felix Eckmann ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Light Emission ◽  
Atomic Layer ◽  
Silicon Nanoparticle ◽  
Nanoparticle Films ◽  
Layer Deposition ◽  
Photovoltaic Applications

Atomic layer deposition of tin oxide using tetraethyltin to produce high-capacity Li-ion batteries

2017 ◽  
Vol 35 (1) ◽  
pp. 01B137 ◽  
Author(s):  
Denis V. Nazarov ◽  
Maxim Yu. Maximov ◽  
Pavel A. Novikov ◽  
Anatoly A. Popovich ◽  
Aleksey O. Silin ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
High Capacity ◽  
Atomic Layer ◽  
Li Ion Batteries ◽  
Layer Deposition ◽  
Li Ion
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