Dramatic vapor-phase modulation of the characteristics of graphene field-effect transistors

2015 ◽  
Vol 17 (28) ◽  
pp. 18426-18430 ◽  
Author(s):  
Barrett C. Worley ◽  
Seohee Kim ◽  
Saungeun Park ◽  
Peter J. Rossky ◽  
Deji Akinwande ◽  
...  
Keyword(s):  
Dipole Moment ◽  
Vapor Phase ◽  
Phase Modulation ◽  
Field Effect ◽  
Organic Molecules ◽  
Field Effect Transistors

Graphene FETs exposed to vapor-phase, polar, organic molecules exhibit shifts in Dirac voltage, the magnitude of which obviously increase with increasing dipole moment of each type of polar vapor.

Selective vapor phase sensing of small molecules using biofunctionalized field effect transistors

2011 ◽  
Author(s):  
Joshua A. Hagen ◽  
Sang Nyon Kim ◽  
Nancy Kelley-Loughnane ◽  
Rajesh R. Naik ◽  
Morley O. Stone
Keyword(s):  
Small Molecules ◽  
Vapor Phase ◽  
Field Effect ◽  
Field Effect Transistors

High‐speed InP/InGaAsP metal‐semiconductor field‐effect transistors grown by chloride vapor phase epitaxy

1989 ◽  
Vol 54 (2) ◽  
pp. 176-178
Author(s):  
A. Antreasyan ◽  
P. A. Garbinski ◽  
V. D. Mattera ◽  
M. D. Feuer ◽  
J. Filipe ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Vapor Phase Epitaxy

Field-effect transistors based on organic single crystals grown by an improved vapor phase method

2009 ◽  
Vol 10 (7) ◽  
pp. 1241-1247 ◽  
Author(s):  
Takeshi Yamao ◽  
Keiichiro Juri ◽  
Akira Kamoi ◽  
Shu Hotta
Keyword(s):  
Single Crystals ◽  
Vapor Phase ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Phase Method

Organic Field Effect Transistors Based on Multilayer Films via Molecular Layer Epitaxy.

2005 ◽  
Vol 871 ◽  
Author(s):  
Yuval Ofir ◽  
Offer Schwartsglass ◽  
Joseph Shappir ◽  
Shlomo Yitzchaik
Keyword(s):  
Vapor Phase ◽  
Self Assembly ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Molecular Layer ◽  
Chemical Vapor ◽  
Covalent Attachment ◽  
Organic Field Effect Transistors ◽  
Thin Gate Oxide ◽  
Tetracarboxylic Dianhydride

AbstractA Self-Assembly oriented technique from the vapor-phase, Molecular Layer Epitaxy (MLE), was utilized for the buildup of organic multilayers as the active channel in organic field effect transistors (OFET). Carrier gas-assisted chemical vapor deposition (CVD) of 1,4,5,8-naphthalene-tetracarboxylic-dianhydride (NTCDA) and an aliphatic spacer are used in a pulsed mode for the covalent attachment of a single monolayer at a time resulting in an ordered dense multilayer film. The MLE approach uses a template layer to promote coupling between the substrate and the precursors deposited from the vapor phase. Interlayer epitaxy is governed by self-limiting vapor-phase condensation reactions while intra-layer ordering is achieved via horizontal π-stacking. Resulting multilayers were characterized by means of contact angle, variable angle spectroscopic ellipsometry (VASE), AFM, absorbance in the UV-vis.-NIR and FTIR. Multilayer structures are also built on a silicon substrate with predefined gold electrodes, using a self assembled template layer on the electrodes and on the thin gate oxide, thus allowing for the buildup of a multilayer structure covering both the electrodes and the channel area while enhancing the nature of the contact between the multilayer and the source and drain electrodes. Resulting OFET devices show n-type conductivity with a mobility of 0.031 cm2 V-1 s-1 for a 6nm thickness MLE film, thus justifying the utilization of the technique in OFETs research and applications.

Gigahertz logic based on InP metal-insulator-semiconductor field-effect transistors by vapor phase epitaxy

1987 ◽  
Vol 34 (9) ◽  
pp. 1897-1901 ◽  
Author(s):  
A. Antreasyan ◽  
P.A. Garbinski ◽  
V.D. Mattera ◽  
J.M. Wiesenfeld ◽  
R.S. Tucker ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Vapor Phase Epitaxy ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor
Sign in / Sign up

Export Citation Format

Share Document