High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

CrystEngComm ◽  
2016 ◽  
Vol 18 (14) ◽  
pp. 2446-2454 ◽  
Author(s):  
Yunhao Lin ◽  
Meijuan Yang ◽  
Wenliang Wang ◽  
Zhiting Lin ◽  
Junning Gao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Epitaxial Films ◽  
High Quality ◽  
Si Substrates ◽  
Step Growth ◽  
Aln Buffer

Improvement of the crystallinity of GaN epitaxial layers grown on porous Si (100) layers by using a two-step method

2000 ◽  
Vol 15 (12) ◽  
pp. 2602-2605 ◽  
Author(s):  
T. W. Kang ◽  
S. H. Park ◽  
T. W. Kim
Keyword(s):  
Hall Effect ◽  
High Energy ◽  
Epitaxial Films ◽  
Epitaxial Layers ◽  
Porous Si ◽  
Step Method ◽  
High Quality ◽  
Si Substrates ◽  
Hall Effect Measurements ◽  
Step Growth

A new approach was used for combining GaN and porous Si with the goal of producing high-quality GaN epitaxial layers for optoelectronic integrated circuit devices based on Si substrates. Reflection high-energy electron diffraction (RHEED), x-ray diffraction (XRD), photoluminescence (PL), and Van der Pauw–Hall effect measurements were performed to investigate the structural, optical, and electrical properties of the GaN epitaxial films grown on porous Si(100) by plasma-assisted molecular-beam epitaxy with a two-step method. The RHEED patterns were streaky with clear Kikuchi lines, which was direct evidence for layer-by-layer two-dimensional growth of GaN epitaxial layers on porous Si layers. The XRD curves showed that the grown layers were GaN(0001) epitaxial films. The results of the XRD and the PL measurements showed that the crystallinities of the GaN epilayers grown on porous Si by using a two-step growth were remarkably improved because the porous Si layer reduced the strains in the GaN epilayers by sharing them with the Si substrates. Hall-effect measurements showed that the mobility of the GaN active layer was higher than that of the GaN initial layer. These results indicate that high-quality GaN epitaxial films grown on porous Si(100) by using two-step growth hold promise for potential applications in new kinds of optoelectronic monolithic and ultralarge integrated circuits.

Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates

2016 ◽  
Vol 52 (3) ◽  
pp. 1318-1329 ◽  
Author(s):  
Haiyan Wang ◽  
Wenliang Wang ◽  
Weijia Yang ◽  
Yunnong Zhu ◽  
Zhiting Lin ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Epitaxial Films ◽  
High Quality ◽  
Si Substrates

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films

2014 ◽  
Vol 881-883 ◽  
pp. 1117-1121 ◽  
Author(s):  
Xiang Min Zhao
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Rf Magnetron Sputtering ◽  
Buffer Layers ◽  
Zno Thin Films ◽  
Zno Films ◽  
Si Substrates ◽  
Atomic Force ◽  
Structure Morphology ◽  
Aln Buffer

ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is 60 min.

The effect of AlN buffer layer on GaN grown on (111)-oriented Si substrates by MOCVD

2000 ◽  
Vol 218 (2-4) ◽  
pp. 181-190 ◽  
Author(s):  
S Zamir ◽  
B Meyler ◽  
E Zolotoyabko ◽  
J Salzman
Keyword(s):  
Buffer Layer ◽  
Si Substrates ◽  
Aln Buffer

Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer

2006 ◽  
Vol 21 (5) ◽  
pp. 702-708 ◽  
Author(s):  
D Gogova ◽  
D Siche ◽  
R Fornari ◽  
B Monemar ◽  
P Gibart ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Structural Studies ◽  
High Quality ◽  
Aln Buffer

Growth and properties of epitaxial PbSe on Si(111) and Si(100) without buffer layer

1995 ◽  
Vol 379 ◽  
Author(s):  
P. Müller ◽  
A.N. Tiwari ◽  
H. Zogg
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Infrared Detector ◽  
Device Fabrication ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
High Quality ◽  
Si Substrates ◽  
Large Lattice ◽  
Large Lattice Mismatch

Narrow gap IV-VI materials like PbS, PbSnSe and PbSnTe are used for infrared detector device fabrication [1,2]. Earlier an intermediate Ila-fluoride buffer layer, which consisted of a BaF2/CaF2-stack of about 2000 Å thickness, was used to get epitaxial high quality layers on silicon substrates. This buffer is now reduced to a much thinner layer of only about 20 Å thick CaF2, regardless the large lattice mismatch between layer and substrate [3,4,5]. The question therefore arises if high quality IV-VI layers can be grown on Si-substrates without any buffer layer as e.g. in CdTe/Si or GaAs/Si systems.The aim of this work is to grow IV-VI layers directly on Si-substrates without any buffer layers to study the growth kinetics and epitaxial quality. PbSe was chosen as a representant of IV-VI materials, and layers were grown on (111)- and (100)-oriented silicon substrates.

Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

2016 ◽  
Vol 9 (2) ◽  
pp. 025501 ◽  
Author(s):  
Hideto Miyake ◽  
Gou Nishio ◽  
Shuhei Suzuki ◽  
Kazumasa Hiramatsu ◽  
Hiroyuki Fukuyama ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Quality ◽  
Aln Film ◽  
Aln Buffer

High quality MOCVD GaN film grown on sapphire substrates using HT-AlN buffer layer

2006 ◽  
Vol 352 (23-25) ◽  
pp. 2332-2334 ◽  
Author(s):  
B. Potì ◽  
M.A. Tagliente ◽  
A. Passaseo
Keyword(s):  
Buffer Layer ◽  
High Quality ◽  
Sapphire Substrates ◽  
Aln Buffer ◽  
Gan Film
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