Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

2016 ◽  
Vol 9 (2) ◽  
pp. 025501 ◽  
Author(s):  
Hideto Miyake ◽  
Gou Nishio ◽  
Shuhei Suzuki ◽  
Kazumasa Hiramatsu ◽  
Hiroyuki Fukuyama ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Quality ◽  
Aln Film ◽  
Aln Buffer

Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate Using AlN as a Buffer Layer

2008 ◽  
Vol 600-603 ◽  
pp. 251-254 ◽  
Author(s):  
Yong Mei Zhao ◽  
Guo Sheng Sun ◽  
Xing Fang Liu ◽  
Jia Ye Li ◽  
Wan Shun Zhao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
Si Substrate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Aln Film ◽  
Pressure Chemical ◽  
Aln Buffer ◽  
Sic Film

Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100oC was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300oC indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.

Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer

2006 ◽  
Vol 21 (5) ◽  
pp. 702-708 ◽  
Author(s):  
D Gogova ◽  
D Siche ◽  
R Fornari ◽  
B Monemar ◽  
P Gibart ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Structural Studies ◽  
High Quality ◽  
Aln Buffer

scholarly journals Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1063
Author(s):  
Badis Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Fiber Texture ◽  
Dc Magnetron Sputtering ◽  
Sem Images ◽  
Aln Film ◽  
Aln Buffer

This paper reports the effect of Silicon substrate orientation and Aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by a DC magnetron sputtering technique at low temperatures. The structural analysis has revealed a strong (0001) fiber texture for both Si(100) and (111) substrates, and a hetero-epitaxial growth on a AlN buffer layer, which is only a few nanometers in size, grown by MBE onthe Si(111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si(111), in compression on Si(100) and under tension on a AlN buffer layer grown by MBE/Si(111) substrates, respectively. The interface between Si(111) and AlN grown by MBE is abrupt and well defined, contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at a low temperature (<250 °C).

High quality MOCVD GaN film grown on sapphire substrates using HT-AlN buffer layer

2006 ◽  
Vol 352 (23-25) ◽  
pp. 2332-2334 ◽  
Author(s):  
B. Potì ◽  
M.A. Tagliente ◽  
A. Passaseo
Keyword(s):  
Buffer Layer ◽  
High Quality ◽  
Sapphire Substrates ◽  
Aln Buffer ◽  
Gan Film

scholarly journals High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes

AIP Advances ◽  
2017 ◽  
Vol 7 (5) ◽  
pp. 055110 ◽  
Author(s):  
Chia-Yen Huang ◽  
Pei-Yu Wu ◽  
Kai-Shiang Chang ◽  
Yun-Hsiang Lin ◽  
Wei-Chih Peng ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Ultra Violet ◽  
High Quality ◽  
Light Emitting ◽  
Ultra Violet Light ◽  
Violet Light ◽  
Sputter Deposited ◽  
Aln Buffer

Preparation of AlN film grown on sputter-deposited and annealed AlN buffer layer via HVPE

2020 ◽  
Author(s):  
Di-Di Li ◽  
Jing-Jing Chen ◽  
Xu-Jun Su ◽  
Jun Huang ◽  
Mu-Tong Niu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Aln Film ◽  
Sputter Deposited ◽  
Aln Buffer

High Quality AlN Thin Films Deposited by Middle-Frequency Magnetron Sputtering at Room Temperature

2014 ◽  
Vol 787 ◽  
pp. 227-231 ◽  
Author(s):  
Chuan Li ◽  
Lin Shu ◽  
Li Jun He ◽  
Xing Zhao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Aluminum Nitride ◽  
Buffer Layer ◽  
Room Temperature ◽  
Residual Tensile Stress ◽  
High Quality ◽  
Polycrystalline Aluminum ◽  
Aln Buffer

A study of depositing high quality c-axis oriented polycrystalline aluminum nitride thin film at room temperature was presented. Aluminum nitride films were grown by mid-frequency (MF) reactive sputtering. Metallic aluminum target was used to deposit AlN films in Ar/N2 gas mixture. A 50nm thick of N-rich AlN buffer layer was deposited at the initial stage of sputtering process to improve the film quality. The composition, preferred orientation and residual stress of the films were analyzed by EDS, XRD and Raman microscope, respectively. The results showed that the N-rich AlN buffer layer improved the textured degree and reduced the residual stress significantly of the AlN thin films. The near stoichiometric AlN thin film with highly textured degree was obtained. The FWHM value of the rocking curve for (0002) diffraction peak was about 1.6°, and the residual tensile stress was about 500MPa. The piezoelectric d33 coefficient increased with the decreasing of FWHM value, and the highest d33 coefficient of 3.6 pF/C was obtained.

scholarly journals HIGH QUALITY GAN AND ALGAN LAYERS GROWN BY AMMONIA MBE WITH US GA AS SURFACTANT

2016 ◽  
Vol 2 (1) ◽  
pp. 126-129
Author(s):  
Зайцев ◽  
Sergey Zaytsev ◽  
Новиков ◽  
Sergey Novikov ◽  
Петров ◽  
...  
Keyword(s):  
Growth Rate ◽  
Substrate Temperature ◽  
Buffer Layer ◽  
Rate Constant ◽  
Growth Kinetics ◽  
Growth Rate Constant ◽  
High Quality ◽  
Mbe Growth ◽  
Surface Mobility ◽  
Aln Buffer

In this work we present the results of AlN buffer layer ammonia MBE growth for HEMT using Ga as surfactant. Key parameters that affect the growth kinetics and defects formation are efficient fluxes of precursors and surfactant as well as the substrate temperature which limits surfactant flux because of desorption Ga from the surface. In particular, addition of Ga flux equal to Al flux at substrate temperature 1150 °C keeps the growth rate constant. This approach allows to increase surface mobility of adatoms, provides quick transition to 2D–growth mode, that results in mobility increasing in GaN bulk layer as well as in heterostructures with 2DEG. In GaN/AlGaN heterostructures mobility up to 2000 cm2/Vs was achieved.

scholarly journals Raman Analysis of E2 (High) and A1 (LO) Phonon to the Stress-Free GaN Grown on Sputtered AlN/Graphene Buffer Layer

2020 ◽  
Vol 10 (24) ◽  
pp. 8814
Author(s):  
Yu Zeng ◽  
Jing Ning ◽  
Jincheng Zhang ◽  
Yanqing Jia ◽  
Chaochao Yan ◽  
...  
Keyword(s):  
Buffer Layer ◽  
High Speed ◽  
Wide Band ◽  
Biaxial Stress ◽  
Buffer Layers ◽  
Monolayer Graphene ◽  
Wide Band Gap ◽  
High Quality ◽  
Information Interaction ◽  
Aln Buffer

The realization of high-speed and high-power gallium nitride (GaN)-based devices using high-quality GaN/Aluminum nitride (AlN) materials has become a hot topic. Raman spectroscopy has proven to be very useful in analyzing the characteristics of wide band gap materials, which reveals the information interaction of sample and phonon dynamics. Four GaN samples grown on different types of buffer layers were fabricated and the influence of graphene and sputtered AlN on GaN epitaxial layers were analyzed through the E2 (high) and A1 (LO) phonon. The relationship between the frequency shift of E2 (high) phonons and the biaxial stress indicated that the GaN grown on the graphene/sputtered AlN buffer layer was stress-free. Furthermore, the phonon lifetimes of A1 (LO) mode in GaN grown on graphene/sputtered AlN buffer layer suggested that carrier migration of GaN received minimal interference. Finally, the Raman spectra of graphene with the sputtered AlN interlayer has more disorder and the monolayer graphene was also more conducive to nucleation of GaN films. These results will have significant impact on the heteroepitaxy of high-quality thin GaN films embedded with a graphene/sputtered AlN buffer, and will facilitate the preparation of high-speed GaN-based optoelectronic devices.

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

1986 ◽  
Vol 48 (5) ◽  
pp. 353-355 ◽  
Author(s):  
H. Amano ◽  
N. Sawaki ◽  
I. Akasaki ◽  
Y. Toyoda
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer ◽  
Vapor Phase ◽  
High Quality ◽  
Aln Buffer ◽  
Gan Film
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