Heteroepitaxial growth of InGaSb on GaSb/Si(111)-√3 × √3-Ga surface phase with a two-step growth method to investigate the impact of high-quality GaSb buffer layer

2016 ◽  
Vol 254 (2) ◽  
pp. 1600528 ◽  
Author(s):  
Ahmed Ali Mohammad Monzur-Ul-Akhir ◽  
Masayuki Mori ◽  
Koichi Maezawa
Keyword(s):  
Buffer Layer ◽  
Surface Phase ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
Growth Method ◽  
Step Growth ◽  
The Impact

Effect of buffer layer annealing temperature on the crystalline quality of In0.82Ga0.18As layers grown by two-step growth method

2011 ◽  
Vol 509 (24) ◽  
pp. 6751-6755 ◽  
Author(s):  
Xia Liu ◽  
Hang Song ◽  
Guoqing Miao ◽  
Hong Jiang ◽  
Lianzhen Cao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Annealing Temperature ◽  
Crystalline Quality ◽  
Growth Method ◽  
Step Growth

Epitaxial Relationships and Electrical Properties of SrTiO3 Films on Various Thin -Fluoride/Si Structures

1994 ◽  
Vol 341 ◽  
Author(s):  
B. K. Moon ◽  
H. Ishiwara
Keyword(s):  
Buffer Layer ◽  
Buffer Layers ◽  
Breakdown Field ◽  
X Ray Diffraction ◽  
Dielectric Characteristics ◽  
X Ray ◽  
Si Substrates ◽  
Initial Stage ◽  
Growth Method ◽  
Step Growth

AbstractCrystalline strontium titanate (SrTiO3:STO) films were grown on Si(111) and Si(100) substrates using thin SrF2 and CaF2 buffer layers by two-step growth method. In all cases, fluoride buffer layers were effective in growing STO films on Si substrates, which is probably due to that fluoride buffer layers have excellent crystallinity and they can prevent formation of amorphous SiO2 layers on Si substrates at the initial stage of the STO deposition. It was found from X-ray diffraction and pole-figure measurements that (110)-oriented STO crystallites with three different positions to the substrate were grown on Si(111) substrates for both SrF2 and CaF2 buffer layers. In constrast, (100)-oriented STO films with 12-fold symmetry were grown on a SrF2/Si(100), and mixed (110)- and (100)-oriented STO crystallites were grown on a CaF2/Si(100) structure. It was concluded from these results that better crystallinity of STO films can be obtained on the SrF2 buffer layer in case of Si(111) and on the CaF2 buffer layer in case of Si(100). It was also found from I-V and C-V analyses that the STO films have good insulating and dielectric characteristics. For a SrTiO3 film on SrF2/Si(111) structure, the best values of breakdown field (at l.μA/cm2), resistivity (at IMV/cm) and dielectric constant were 2.3MV/cm, 8.2 × 1012 Ωcm and 72, respectively.

Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method

2014 ◽  
Vol 778-780 ◽  
pp. 167-170 ◽  
Author(s):  
Yoichiro Mitani ◽  
Nobuyuki Tomita ◽  
Kenichi Hamano ◽  
Masayoshi Tarutani ◽  
Takanori Tanaka ◽  
...  
Keyword(s):  
High Temperature ◽  
Epitaxial Growth ◽  
High Quality ◽  
Sic Particles ◽  
Before And After ◽  
Growth Method ◽  
Step Growth ◽  
Micrometer Scale

A new growth method for considerably suppressing generation of carrot and triangle defects is presented. Based on the investigation for the surfaces before and after the epitaxial growth, it becomes clear that those defects were results from micrometer-scale SiC particles. For removing the particles, pre-flow of H2 at high temperature before the growth was very effective. The density of those defects strongly depends on the condition of the pre-flow and especially decreased at Tp=1575°C and tp=180 sec.

High quality homoepitaxial diamond thin film synthesis with high growth rate by a two-step growth method

1999 ◽  
Vol 8 (6) ◽  
pp. 1046-1049 ◽  
Author(s):  
D. Takeuchi ◽  
S. Yamanaka ◽  
H. Watanabe ◽  
S. Sawada ◽  
H. Ichinose ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Diamond Thin Film ◽  
Growth Method ◽  
Step Growth ◽  
Film Synthesis

High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon

2013 ◽  
Vol 740-742 ◽  
pp. 327-330 ◽  
Author(s):  
Maki Suemitsu ◽  
Shota Sanbonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
The Other ◽  
High Rate ◽  
Si Substrate ◽  
High Quality ◽  
Si Substrates ◽  
Growth Method ◽  
Step Growth ◽  
Sic Film ◽  
Sic Films

In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.

Three-step growth method for high quality AlN epilayers

2011 ◽  
Vol 209 (1) ◽  
pp. 126-129 ◽  
Author(s):  
M. L. Nakarmi ◽  
B. Cai ◽  
J. Y. Lin ◽  
H. X. Jiang
Keyword(s):  
High Quality ◽  
Growth Method ◽  
Step Growth

High-quality and crack-free AlxGa1−xN (x∼0.2) grown on sapphire by a two-step growth method

2005 ◽  
Vol 277 (1-4) ◽  
pp. 44-50 ◽  
Author(s):  
C.F. Shih ◽  
M.Y. Keh ◽  
Y.N. Wang ◽  
N.C. Chen ◽  
Chin-An Chang ◽  
...  
Keyword(s):  
High Quality ◽  
Growth Method ◽  
Step Growth

Effect of ZnO buffer layer prepared by rf sputtering on heteroepitaxial growth of high-quality ZnO films

Vacuum ◽  
2004 ◽  
Vol 74 (3-4) ◽  
pp. 601-605 ◽  
Author(s):  
D. Sato ◽  
Y. Kashiwaba ◽  
K. Haga ◽  
H. Watanabe ◽  
B.P. Zhang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Rf Sputtering ◽  
Zno Films ◽  
Heteroepitaxial Growth ◽  
High Quality ◽  
Zno Buffer Layer
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