Characteristics of flexographic printed indium–zinc-oxide thin films as an active semiconductor layer in thin film field-effect transistors

2014 ◽  
Vol 320 ◽  
pp. 634-642 ◽  
Author(s):  
Stefan Dilfer ◽  
Rudolf C. Hoffmann ◽  
Edgar Dörsam
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Layer ◽  
Oxide Thin Films ◽  
Indium Zinc Oxide

Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

2010 ◽  
Vol 97 (24) ◽  
pp. 243506 ◽  
Author(s):  
M. Lorenz ◽  
A. Lajn ◽  
H. Frenzel ◽  
H. v. Wenckstern ◽  
M. Grundmann ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Oxide Thin Films ◽  
Indium Zinc Oxide

High Mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering

2012 ◽  
Vol 4 (12) ◽  
pp. 6835-6841 ◽  
Author(s):  
Daniel E. Walker ◽  
Marton Major ◽  
Mehrdad Baghaie Yazdi ◽  
Andreas Klyszcz ◽  
Marc Haeming ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Semiconductor Layer ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Metal-Semiconductor-Insulator-Metal Structure Field-Effect Transistors Based on Zinc Oxides and Doped Ferroelectric Thin Films

2014 ◽  
Vol 1633 ◽  
pp. 131-137 ◽  
Author(s):  
Ze Jia ◽  
Jianlong Xu ◽  
Xiao Wu ◽  
Mingming Zhang ◽  
Naiwen Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Sol Gel ◽  
Drain Current ◽  
Metal Structure ◽  
Ferroelectric Materials ◽  
Ferroelectric Thin Films

ABSTRACTDifferent ferroelectric thin films and their related Metal-Semiconductor-Insulator-Metal (MSIM) structures include zinc oxide (ZnO) are studied, which can be utilized in back-gated ferroelectric field-effect transistors (FETs). The most ideal zinc oxide (ZnO) thin film prepared by sol-gel method are obtained under the pyrolysis temperature of 400°C and the annealing temperature of 600°C. The asymmetric or symmetric current-voltage characteristics of the heterostructures with ZnO are exhibited depending on different ferroelectric materials in them. The curves of drain current versus gate voltage for MSIM-structure FETs are investigated, in which obvious counterclockwise loops and a drain current switching ratio up to two orders of magnitude ate observed due to the modulation effect of remnant polarization on the channel resistance. The results also indicate the positive influences of impurity atom substitution in bismuth ferrite thin film for the MSIM-structure FETs.

Gamma irradiation effects on the properties of indium zinc oxide thin films

2016 ◽  
Vol 614 ◽  
pp. 2-6 ◽  
Author(s):  
Doina Craciun ◽  
Gabriel Socol ◽  
Sophie Le Caër ◽  
Liliana M. Trinca ◽  
Aurelian C. Galca ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Gamma Irradiation ◽  
Irradiation Effects ◽  
Oxide Thin Films ◽  
Indium Zinc Oxide

Room-Temperature-Deposited Indium-Zinc Oxide Thin Films with Controlled Conductivity

2007 ◽  
Vol 10 (9) ◽  
pp. H267 ◽  
Author(s):  
Wantae Lim ◽  
Yu-Lin Wang ◽  
F. Ren ◽  
D. P. Norton ◽  
I. I. Kravchenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Indium Zinc Oxide

Stability Studies on Optical and Structure Properties of Zinc Oxide Thin Films Exposed to Different Environment

2013 ◽  
Vol 667 ◽  
pp. 549-552
Author(s):  
A.S.M. Rodzi ◽  
Mohamad Hafiz Mamat ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Absorption Coefficient ◽  
Near Infrared ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Zno Thin Film ◽  
Oxide Thin Films

The properties of zinc oxide thin films were prepared by sol-gel spin-coating method have been presented. This study based on optical and electrical properties of ZnO thin film. The effects of annealing temperatures that exposed with two environments properties have been investigated. Environments exposed in room (27°C) and hot (80°C) temperatures which are stored by various days. Solution preparation, thin film deposition and characterization process were involved in this project. The ZnO films were characterized using UV-Vis-NIR spectrophotometer for optical properties. From that equipment, the percentage of transmittance (%) and absorption coefficient spectra were obtained. With two environments showed have different absorption coefficient are reveal and all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. From SEM investigations the surface morphology of ZnO thin film shows the particles size become smaller and denser in hot temperatures while in room temperatures have porosity between particles.

Optical properties of amorphous indium zinc oxide thin films synthesized by pulsed laser deposition

2014 ◽  
Vol 306 ◽  
pp. 52-55 ◽  
Author(s):  
V. Craciun ◽  
C. Martin ◽  
G. Socol ◽  
D. Tanner ◽  
H.C. Swart ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Oxide Thin Films ◽  
Indium Zinc Oxide
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