Self-powered, visible-blind ultraviolet photodetector based on n-ZnO nanorods/i-MgO/p-GaN structure light-emitting diodes

2015 ◽  
Vol 3 (5) ◽  
pp. 990-994 ◽  
Author(s):  
Hai Zhou ◽  
Pengbin Gui ◽  
Qiuheng Yu ◽  
Jun Mei ◽  
Hao Wang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Zno Nanorods ◽  
Ultraviolet Photodetector ◽  
Light Emitting ◽  
Self Powered ◽  
Visible Blind ◽  
Structure Light

A self-powered, visible-blind ultraviolet photodetector based on n-ZnO nanorods/i-MgO/p-GaN structure light-emitting diode.

scholarly journals Unravelling the electron injection/transport mechanism in organic light-emitting diodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Tsubasa Sasaki ◽  
Munehiro Hasegawa ◽  
Kaito Inagaki ◽  
Hirokazu Ito ◽  
Kazuma Suzuki ◽  
...  
Keyword(s):  
Work Function ◽  
Transport Mechanism ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Electron Injection ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Materials Used

AbstractAlthough significant progress has been made in the development of light-emitting materials for organic light-emitting diodes along with the elucidation of emission mechanisms, the electron injection/transport mechanism remains unclear, and the materials used for electron injection/transport have been basically unchanged for more than 20 years. Here, we unravelled the electron injection/transport mechanism by tuning the work function near the cathode to about 2.0 eV using a superbase. This extremely low-work function cathode allows direct electron injection into various materials, and it was found that organic materials can transport electrons independently of their molecular structure. On the basis of these findings, we have realised a simply structured blue organic light-emitting diode with an operational lifetime of more than 1,000,000 hours. Unravelling the electron injection/transport mechanism, as reported in this paper, not only greatly increases the choice of materials to be used for devices, but also allows simple device structures.

Electrically driven single microribbon based near-infrared exciton-polariton light-emitting diode

CrystEngComm ◽  
2021 ◽  
Author(s):  
Mingming Jiang ◽  
Fupeng Zhang ◽  
Kai Tang ◽  
Peng Wan ◽  
Caixia Kan
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Light Sources ◽  
Coherent Light ◽  
Light Emitting ◽  
Exciton Polaritons ◽  
Laser Devices

Achieving electrically-driven exciton-polaritons has drawn substantial attention toward developing ultralow-threshold coherent light sources, containing polariton laser devices and high-performance light-emitting diodes (LEDs). In this work, we demonstrate an electrically driven...

scholarly journals The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 42
Author(s):  
Jie Zhao ◽  
Weijiang Li ◽  
Lulu Wang ◽  
Xuecheng Wei ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Strain Relaxation ◽  
Blue Shift ◽  
Peak Position ◽  
Excitation Power ◽  
Light Extraction Efficiency ◽  
Excitation Power Density ◽  
Light Emitting

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.

Self Powered Flexible Electronics Based on Self Poled “Ferroelectretic” Nanogenerator

MRS Advances ◽  
2016 ◽  
Vol 1 (45) ◽  
pp. 3083-3088 ◽  
Author(s):  
Sujoy Kumar Ghosh ◽  
Dipankar Mandal
Keyword(s):  
Composite Film ◽  
Flexible Electronics ◽  
Light Emitting Diode ◽  
Open Circuit ◽  
Pvdf Film ◽  
Light Emitting ◽  
Single Finger ◽  
Finger Touch ◽  
Self Powered ◽  
Pure Pvdf

ABSTRACTA ferroelectric nanogenerator without any electric poling treatment has been realized by incorporation of ytterbium (Yb) salt incorporated porous PVDF composite film. The composite film compose of electroactive β- and γ-phases, demonstrates higher dielectric and ferroelectric polarization responses than pure PVDF film. The 3 V of open circuit voltage with 0.47 µW/cm2 power density was generated by the nanogenerator upon single finger touch. It can also operate capacitor and light emitting diode without any subsidiary batteries.

Electroluminescence of p-GaN/MgO/n-ZnO Heterojunction Light-emitting Diodes

2012 ◽  
Vol 1439 ◽  
pp. 109-114
Author(s):  
XinYi Chen ◽  
Alan M. C. Ng ◽  
Aleksandra B. Djurišić ◽  
Chi Chung Ling ◽  
Wai-Kin Chan ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Zno Nanorods ◽  
Emission Spectra ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Light Emitting ◽  
Type Layer ◽  
Growth Properties ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTLight-emitting diodes (LEDs) based on p-GaN/ZnO heterojunction were fabricated. GaN was deposited on sapphire using metal-organic chemical vapor deposition (MOCVD), and two kinds of ZnO i.e. ZnO thin film deposited by sputtering and ZnO nanorods (NRs) grown by hydrothermal method were used as n-type layer respectively. MgO film with the thickness around 10 nm was deposited by electron-beam deposition to act as an interlayer between GaN and ZnO. Photoluminescence, electroluminescence and I-V curves were measured to compare the properties of GaN based heterojunction LEDs with different architectures. The existence of MgO interlayer as well as the morphology of ZnO obviously influenced the electrical and optical properties of GaN based LEDs. The effect of MgO interlayer on ZnO growth, properties and I-V curves and emission spectra of LEDs is discussed in detail.

A paper triboelectric nanogenerator for self-powered electronic systems

Nanoscale ◽  
2017 ◽  
Vol 9 (38) ◽  
pp. 14499-14505 ◽  
Author(s):  
Yanchao Mao ◽  
Nan Zhang ◽  
Yingjie Tang ◽  
Meng Wang ◽  
Mingju Chao ◽  
...  
Keyword(s):  
White Light ◽  
Light Emitting Diodes ◽  
Mechanical Energy ◽  
Triboelectric Nanogenerator ◽  
Electronic Systems ◽  
Light Emitting ◽  
Self Powered ◽  
White Light Emitting Diodes

A novel paper triboelectric nanogenerator (P-TENG) was successfully developed. The P-TENG can harvest mechanical energy from the action of turning book pages, and the generated electricity could directly light up 80 commercial white light-emitting diodes (LEDs).

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