Thienoisoindigo-based copolymer with fused thieno[3,2-b]thiophene as a donor in thin film transistor applications with high performance

2015 ◽  
Vol 3 (1) ◽  
pp. 33-36 ◽  
Author(s):  
Chi-Min Chen ◽  
Sunil Sharma ◽  
Yi-Lun Li ◽  
Jey-Jau Lee ◽  
Show-An Chen
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Hole Mobility ◽  
Temperature Dependent

A thienoisoindigo-based copolymer with thieno[3,2-b]thiophene as a donor shows a temperature-dependent orientation of its chains, and a hole mobility up to 0.69 cm2 V−1 s−1 has been achieved.

scholarly journals High Performance P-Type Perovskite Lagao3 Thin Film Field Effect Transistor Prepared by Solution-Processed

2022 ◽  
Vol 2152 (1) ◽  
pp. 012008
Author(s):  
Qian Chen
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Hole Mobility ◽  
Oxide Semiconductor ◽  
Future Design ◽  
Different Temperatures ◽  
P Type

Abstract Metal oxide semiconductor (MOS) is essential to compose high-performance electronic devices, however, the investigation on p-type MOS is relatively rare compared with its n-type counterpart. In this work, LaGaO3 thin films with superior p-type conductivity have been prepared via a facile solution process. Moreover, we have implemented Al2O3 and SiO2 as the dielectric of the p-channel LaGaO3 thin film transistors (TFTs) annealed at different temperatures. Particularly, the LaGaO3/Al2O3 TFTs annealed at 700 °C exhibit an ultrahigh hole mobility of 12.4 cm2V-1s-1, Under the same conditions, LaGaO3/Al2O3 thin film transistor is two orders of magnitude higher than LaGaO3/SiO2 thin film transistor. The advanced p-type characteristics of the LaGaO3 thin film, along with its facile low-cost fabrication process can shed new light on future design of high-performance complementary MOS circuit with other optimized facile-integrated dielectrics.

Selenophene-containing Semiconducting Polymers for High-performance Ambipolar Thin Film Transistor Application

Polymer ◽  
2021 ◽  
pp. 123685
Author(s):  
Yanjun Guo ◽  
Mingchao Xiao ◽  
Xi Zhang ◽  
Jiayao Duan ◽  
Shengyu Cong ◽  
...  
Keyword(s):  
Thin Film ◽  
High Performance ◽  
Thin Film Transistor ◽  
Semiconducting Polymers

Area and Energy Efficient High-Performance ZnO Wavy Channel Thin-Film Transistor

2014 ◽  
Vol 61 (9) ◽  
pp. 3223-3228 ◽  
Author(s):  
Amir N. Hanna ◽  
Mohamed T. Ghoneim ◽  
Rabab R. Bahabry ◽  
Aftab M. Hussain ◽  
Hossain M. Fahad ◽  
...  
Keyword(s):  
Thin Film ◽  
Energy Efficient ◽  
High Performance ◽  
Thin Film Transistor ◽  
Wavy Channel

Diketopyrrolopyrrole-based polymer with a semi-fluorinated side chain for high-performance organic thin-film transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (35) ◽  
pp. 29164-29171 ◽  
Author(s):  
Kangjian Miao ◽  
Gil Jo Chae ◽  
Xiaoxue Wu ◽  
Qinghai Shu ◽  
Xin Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Hole Mobility ◽  
Organic Thin Film Transistors ◽  
Side Chain ◽  
Organic Thin Film

A semi-fluorinated DPP based polymer showed hole mobility about 3 times higher than did its non-fluorinated analogue.

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