Regulation of the morphology and photoluminescence of silicon nanowires by light irradiation

2014 ◽  
Vol 2 (45) ◽  
pp. 9631-9636 ◽  
Author(s):  
Lin Liu

We successfully synthesized porous Si nanowire arrays with excellent photoluminescence properties.

2021 ◽  
Vol 1837 (1) ◽  
pp. 012005
Author(s):  
Pai Lu ◽  
Xuyuan Chen ◽  
Per Ohlckers ◽  
Einar Halvorsen ◽  
Martin Hoffmann ◽  
...  

2010 ◽  
Vol 160-162 ◽  
pp. 1331-1335 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
S.N. Syed Jalal ◽  
Wei A. Ng ◽  
Zahid A.K. Durrani

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.


2002 ◽  
Vol 19 (11) ◽  
pp. 1703-1706 ◽  
Author(s):  
Li Meng-Ke ◽  
Lu Mei ◽  
Kong Ling-Bin ◽  
Wang Cheng-Wei ◽  
Guo Xin-Yong ◽  
...  

2018 ◽  
Vol 4 (2) ◽  
Author(s):  
Chu Rainer Kwang-Hua

We adopted the verified transition state theory, which originates from the quantum chemistry approach to explain the anomalous plastic flow or plastic deformation for Si nanowires irradiated with 100 keV (at room temperature regime) Ar+ ions as well as the observed amorphization along the Si nanowire (Johannes, et al. 2015, “Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires,” Nano Lett., 15, pp. 3800–3807). We shall illustrate some formulations which can help us calculate the temperature-dependent viscosity of flowing Si in nanodomains.


2012 ◽  
Vol 21 ◽  
pp. 109-115 ◽  
Author(s):  
S. Naama ◽  
T. Hadjersi ◽  
G. Nezzal ◽  
L. Guerbous

One-step metal-assisted electroless chemical etching of p-type silicon substrate in NH4HF2/AgNO3 solution was investigated. The effect of different etching parameters including etching time, temperature, AgNO3 concentration and NH4HF2 concentration were investigated. The etched layers formed were investigated by scanning electron microscopy (SEM) and Photoluminescence. It was found that the etched layer was formed by well-aligned silicon nanowires. It is noted that their density and length strongly depend on etching parameters. Room temperature photoluminescence (PL) from etched layer was observed. It was observed that PL peak intensity increases significantly with AgNO3 concentration.


2019 ◽  
Vol 11 (47) ◽  
pp. 44325-44332 ◽  
Author(s):  
Pengcheng Zhang ◽  
Chengxin Peng ◽  
Xiangsi Liu ◽  
Fei Dong ◽  
Hongyi Xu ◽  
...  

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