Electrochemically controlled fabrication of lightly doped porous Si nanowire arrays with excellent antireflective and self-cleaning properties

2012 ◽  
Vol 60 (5) ◽  
pp. 2097-2103 ◽  
Author(s):  
Ruey-Chi Wang ◽  
Chien-Yang Chao ◽  
Wei-Sung Su
2014 ◽  
Vol 2 (45) ◽  
pp. 9631-9636 ◽  
Author(s):  
Lin Liu

We successfully synthesized porous Si nanowire arrays with excellent photoluminescence properties.


2010 ◽  
Vol 20 (48) ◽  
pp. 10924 ◽  
Author(s):  
Yu-An Dai ◽  
Hung-Chih Chang ◽  
Kun-Yu Lai ◽  
Chin-An Lin ◽  
Ren-Jei Chung ◽  
...  

2021 ◽  
Vol 1837 (1) ◽  
pp. 012005
Author(s):  
Pai Lu ◽  
Xuyuan Chen ◽  
Per Ohlckers ◽  
Einar Halvorsen ◽  
Martin Hoffmann ◽  
...  

2010 ◽  
Vol 160-162 ◽  
pp. 1331-1335 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
S.N. Syed Jalal ◽  
Wei A. Ng ◽  
Zahid A.K. Durrani

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.


2019 ◽  
Vol 11 (47) ◽  
pp. 44325-44332 ◽  
Author(s):  
Pengcheng Zhang ◽  
Chengxin Peng ◽  
Xiangsi Liu ◽  
Fei Dong ◽  
Hongyi Xu ◽  
...  

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