A solution chemistry approach to epitaxial growth and stabilisation of Bi2Ti2O7 films

2014 ◽  
Vol 2 (43) ◽  
pp. 18241-18245 ◽  
Author(s):  
Freddy E. Oropeza ◽  
Ignacio J. Villar-Garcia ◽  
Robert G. Palgrave ◽  
David J. Payne

Simple solution chemistry for preparation of single crystalline complex oxide films.

2019 ◽  
Vol 1 (3) ◽  
Author(s):  
Michele Riva ◽  
Giada Franceschi ◽  
Michael Schmid ◽  
Ulrike Diebold

2017 ◽  
Vol 118 (10) ◽  
Author(s):  
Peter P. Orth ◽  
Rafael M. Fernandes ◽  
Jeff Walter ◽  
C. Leighton ◽  
B. I. Shklovskii

2020 ◽  
pp. 1-26
Author(s):  
Suresh Thapa ◽  
Rajendra Paudel ◽  
Miles D. Blanchet ◽  
Patrick T. Gemperline ◽  
Ryan B. Comes

Abstract


1991 ◽  
Vol 59 (12) ◽  
pp. 1503-1505 ◽  
Author(s):  
S. J. Duray ◽  
D. B. Buchholz ◽  
S. N. Song ◽  
D. S. Richeson ◽  
J. B. Ketterson ◽  
...  

1991 ◽  
Vol 222 ◽  
Author(s):  
S. J. Duray ◽  
D. B. Buchholz ◽  
S. N. Song ◽  
D. S. Richeson ◽  
J. B. Ketterson ◽  
...  

ABSTRACTWe report the results of a pulsed organo-metallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10-4 -10-2 torr) and low substrate temperature (600 to 700 C) using organo-metallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organo-metallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films ([Tc (R=0)=90.5K] and Jc (77K, 50K gauss)=l.l×105 A/cm2) is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in-situ processing of multilayer structures (e.g. junctions).


2004 ◽  
Vol 109 (1-3) ◽  
pp. 131-135 ◽  
Author(s):  
T Tsuchiya ◽  
I Yamaguchi ◽  
T Manabe ◽  
T Kumagai ◽  
S Mizuta

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