Plasma Enhanced OMCVD Atomic Layered Growth of Y-BA-CU Oxide Films

1991 ◽  
Vol 222 ◽  
Author(s):  
S. J. Duray ◽  
D. B. Buchholz ◽  
S. N. Song ◽  
D. S. Richeson ◽  
J. B. Ketterson ◽  
...  
Keyword(s):  
Oxide Films ◽  
Chemical Vapor ◽  
Complex Oxide ◽  
Deposition Process ◽  
Composition And Structure ◽  
Layered Growth ◽  
Background Gas ◽  
Post Deposition ◽  
Complex Oxide Films

ABSTRACTWe report the results of a pulsed organo-metallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10-4 -10-2 torr) and low substrate temperature (600 to 700 C) using organo-metallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organo-metallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films ([Tc (R=0)=90.5K] and Jc (77K, 50K gauss)=l.l×105 A/cm2) is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in-situ processing of multilayer structures (e.g. junctions).

scholarly journals Probing surfaces and interfaces in complex oxide films via in situ X-ray photoelectron spectroscopy

2020 ◽  
pp. 1-26
Author(s):  
Suresh Thapa ◽  
Rajendra Paudel ◽  
Miles D. Blanchet ◽  
Patrick T. Gemperline ◽  
Ryan B. Comes
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Films ◽  
Complex Oxide ◽  
X Ray ◽  
Surfaces And Interfaces ◽  
Complex Oxide Films

Abstract

scholarly journals Probing surfaces and interfaces in complex oxide films via in situ X-ray photoelectron spectroscopy

2021 ◽  
Author(s):  
Suresh Thapa ◽  
Rajendra Paudel ◽  
Miles D. Blanchet ◽  
Patrick T. Gemperline ◽  
Ryan B. Comes
Keyword(s):  
Photoelectron Spectroscopy ◽  
Scientific Discovery ◽  
Oxide Films ◽  
Complex Oxide ◽  
Emergent Behavior ◽  
Band Alignment ◽  
X Ray ◽  
Topological Quantum ◽  
Complex Oxide Films

AbstractEmergent behavior at oxide interfaces has driven research in complex oxide films for the past 20 years. Interfaces have been engineered for applications in spintronics, topological quantum computing, and high-speed electronics with properties not observed in bulk materials. Advances in synthesis have made the growth of these interfaces possible, while X-ray photoelectron spectroscopy (XPS) studies have often explained the observed interfacial phenomena. This review discusses leading recent research, focusing on key results and the XPS studies that enabled them. We describe how the in situ integration of synthesis and spectroscopy improves the growth process and accelerates scientific discovery. Specific techniques include determination of interfacial intermixing, valence band alignment, and interfacial charge transfer. A recurring theme is the role that atmospheric exposure plays on material properties, which we highlight in several material systems. We demonstrate how synchrotron studies have answered questions that are impossible in lab-based systems and how to improve such experiments in the future.

scholarly journals Percolation via Combined Electrostatic and Chemical Doping in Complex Oxide Films

2017 ◽  
Vol 118 (10) ◽  
Author(s):  
Peter P. Orth ◽  
Rafael M. Fernandes ◽  
Jeff Walter ◽  
C. Leighton ◽  
B. I. Shklovskii
Keyword(s):  
Oxide Films ◽  
Complex Oxide ◽  
Chemical Doping ◽  
Complex Oxide Films

scholarly journals Carbon-Involved Near-Surface Evolution of Cobalt Catalyst during Reaction: An in-situ Study

2020 ◽  
Author(s):  
Feng Yang ◽  
Haofei Zhao ◽  
Wu Wang ◽  
Qidong Liu ◽  
Xu Liu ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Carbon Diffusion ◽  
Deposition Process ◽  
Catalytic Performance ◽  
Surface Evolution ◽  
Near Surface ◽  
Co Catalysts ◽  
Transmission Electron ◽  
Walled Carbon Nanotubes

Abstract When carbon-containing species are involved in reactions catalyzed by transition metals at high temperature, the diffusion of carbon on/in catalysts dramatically influence the catalytic performance. Acquiring information on the carbon-diffusion-involved evolution of catalysts at atomic level is crucial for understanding the reaction mechanism yet also challenging. For the chemical vapor deposition process of single-walled carbon nanotubes (SWCNTs), we developed methodologies to record in-situ the near-surface structural and chemical evolution of Co catalysts with carbon permeation using an aberration-corrected environmental transmission electron microscope and the synchrotron X-ray absorption spectroscopy. The nucleation and growth of SWCNTs were linked with the partial carbonization of catalysts and the alternating dissolvement-precipitation of carbon in catalysts. The dynamics of carbon atoms in catalysts brings deeper insight into the growth mechanism of SWCNTs and also sheds light on inferring mechanisms of more reactions. The methodologies developed here will find broad applications in studying catalytic and other processes.

Structural Defects of Silicon Epitaxy and Epi/Substrate Interface Related to Improper In-Situ Surface Cleaning at Low Temperatures

1990 ◽  
Vol 202 ◽  
Author(s):  
Tri-Rung Yew ◽  
Rafael Reif
Keyword(s):  
Defect Formation ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Surface Cleaning ◽  
Structural Defects ◽  
Plasma Cleaning ◽  
Substrate Interface ◽  
Silicon Epitaxy ◽  
Pressure Chemical

ABSTRACTThis paper investigates the defect formation at the epi/substrate interface and epitaxial layers due to an improper in–situ Ar or Ar/H2 plasma cleaning at 500–800 °C Deposition process was carried out immediately after the in–situ cleaning process by ultralow pressure chemical vapor deposition process (ULPCVD) from SiH4/H2. Characteristics of the defects and their relationship with damage or impurity contaminations at the interface are presented. Finally, an optimum cleaning condition which ensures high quality epitaxial growth is addressed.

Pulsed organometallic beam epitaxy of complex oxide films

1991 ◽  
Vol 59 (12) ◽  
pp. 1503-1505 ◽  
Author(s):  
S. J. Duray ◽  
D. B. Buchholz ◽  
S. N. Song ◽  
D. S. Richeson ◽  
J. B. Ketterson ◽  
...  
Keyword(s):  
Oxide Films ◽  
Complex Oxide ◽  
Complex Oxide Films

Behavior of Various Organosilicon Molecules in PECVD Processes for Hydrocarbon-Doped Silicon Oxide Films

2007 ◽  
Vol 124-126 ◽  
pp. 347-350 ◽  
Author(s):  
Yong Sup Yun ◽  
Takanori Yoshida ◽  
Norifumi Shimazu ◽  
Yasushi Inoue ◽  
Nagahiro Saito ◽  
...  
Keyword(s):  
Chemical Bonding ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Chemical Vapor ◽  
Optical Emission ◽  
Deposition Process ◽  
Doped Silicon ◽  
Oxygen Atoms

Plasma diagnosis was performed by means of optical emission spectroscopy in the plasma-enhanced chemical vapor deposition process for preparation of hydrocarbon-doped silicon oxide films. The chemical bonding states were characterized by a fourier-transform infrared spectrometer. Based on the results of the diagnosis in organosilane plasma and the chemical bonding states, a reaction model for the formation process of hydrocarbon-doped silicon oxide films was discussed. From the results of optical emission spectroscopy, we found that the oxygen atoms of methoxy groups in TMMOS molecules can be dissociated easily in the plasma and behave as a kind of oxidizing agent. Siloxane bondings in HMDSO, on the other hand, hardly expel oxygen atoms.

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