scholarly journals Probing surfaces and interfaces in complex oxide films via in situ X-ray photoelectron spectroscopy

2020 ◽  
pp. 1-26
Author(s):  
Suresh Thapa ◽  
Rajendra Paudel ◽  
Miles D. Blanchet ◽  
Patrick T. Gemperline ◽  
Ryan B. Comes
Keyword(s):  
Photoelectron Spectroscopy ◽  
Oxide Films ◽  
Complex Oxide ◽  
X Ray ◽  
Surfaces And Interfaces ◽  
Complex Oxide Films

Abstract

scholarly journals Probing surfaces and interfaces in complex oxide films via in situ X-ray photoelectron spectroscopy

2021 ◽  
Author(s):  
Suresh Thapa ◽  
Rajendra Paudel ◽  
Miles D. Blanchet ◽  
Patrick T. Gemperline ◽  
Ryan B. Comes
Keyword(s):  
Photoelectron Spectroscopy ◽  
Scientific Discovery ◽  
Oxide Films ◽  
Complex Oxide ◽  
Emergent Behavior ◽  
Band Alignment ◽  
X Ray ◽  
Topological Quantum ◽  
Complex Oxide Films

AbstractEmergent behavior at oxide interfaces has driven research in complex oxide films for the past 20 years. Interfaces have been engineered for applications in spintronics, topological quantum computing, and high-speed electronics with properties not observed in bulk materials. Advances in synthesis have made the growth of these interfaces possible, while X-ray photoelectron spectroscopy (XPS) studies have often explained the observed interfacial phenomena. This review discusses leading recent research, focusing on key results and the XPS studies that enabled them. We describe how the in situ integration of synthesis and spectroscopy improves the growth process and accelerates scientific discovery. Specific techniques include determination of interfacial intermixing, valence band alignment, and interfacial charge transfer. A recurring theme is the role that atmospheric exposure plays on material properties, which we highlight in several material systems. We demonstrate how synchrotron studies have answered questions that are impossible in lab-based systems and how to improve such experiments in the future.

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

Plasma Enhanced OMCVD Atomic Layered Growth of Y-BA-CU Oxide Films

1991 ◽  
Vol 222 ◽  
Author(s):  
S. J. Duray ◽  
D. B. Buchholz ◽  
S. N. Song ◽  
D. S. Richeson ◽  
J. B. Ketterson ◽  
...  
Keyword(s):  
Oxide Films ◽  
Chemical Vapor ◽  
Complex Oxide ◽  
Deposition Process ◽  
Composition And Structure ◽  
Layered Growth ◽  
Background Gas ◽  
Post Deposition ◽  
Complex Oxide Films

ABSTRACTWe report the results of a pulsed organo-metallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10-4 -10-2 torr) and low substrate temperature (600 to 700 C) using organo-metallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organo-metallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films ([Tc (R=0)=90.5K] and Jc (77K, 50K gauss)=l.l×105 A/cm2) is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in-situ processing of multilayer structures (e.g. junctions).

Oxygen Gettering Effect During the Reactive Evaporation of Manganese Oxide Films

1999 ◽  
Vol 14 (4) ◽  
pp. 1653-1657 ◽  
Author(s):  
Masaaki Isai ◽  
Katsuma Yamaguchi ◽  
Haruhiko Iyoda ◽  
Hiroshi Fujiyasu ◽  
Yasumitsu Ito
Keyword(s):  
Manganese Oxide ◽  
Photoelectron Spectroscopy ◽  
Oxide Films ◽  
Rapid Change ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lithium Secondary Batteries ◽  
Reactive Evaporation ◽  
Mn Oxide

Manganese oxide films for lithium secondary batteries were prepared using a reactive evaporation method. Mn was evaporated from a molybdenum boat by resistive heating and deposited on a glass slide under oxygen atmosphere. These films were examined with x-ray photoelectron spectroscopy (XPS) and x-ray diffraction. The Mn oxide films with a wide valency of Mn were prepared in this study. A rapid change of the back pressure was found as the deposition of Mn was started. This implies that Mn atoms start to react with O2. This means that in situ detection of reactive evaporation process can be utilized.

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