High coloration efficiency and fast switching speed of poly(amic acid-imide)s containing triphenylamine in acidic electrolyte

RSC Advances ◽  
2015 ◽  
Vol 5 (15) ◽  
pp. 11071-11076 ◽  
Author(s):  
Yanqiu Wang ◽  
Yu Liang ◽  
Jiaying Zhu ◽  
Xuduo Bai ◽  
Xiankai Jiang ◽  
...  
Keyword(s):  
Switching Time ◽  
Amic Acid ◽  
Switching Speed ◽  
Coloration Efficiency ◽  
Fast Switching ◽  
Acidic Electrolyte ◽  
Fast Switching Speed

The PAA-IM-1 film showed excellent reversible electrochromic stability and short switching time in acidic electrolyte (MBSA).

Improved electrochromic performance of a radio frequency magnetron sputtered NiO thin film with high optical switching speed

RSC Advances ◽  
2016 ◽  
Vol 6 (83) ◽  
pp. 79668-79680 ◽  
Author(s):  
K. S. Usha ◽  
R. Sivakumar ◽  
C. Sanjeeviraja ◽  
Vasant Sathe ◽  
V. Ganesan ◽  
...  
Keyword(s):  
Thin Film ◽  
Radio Frequency ◽  
Optical Switching ◽  
Switching Time ◽  
Rf Magnetron Sputtering ◽  
Optical Modulation ◽  
Switching Speed ◽  
Coloration Efficiency ◽  
Fast Switching ◽  
Nio Thin Film

A nickel oxide (NiO) thin film with better reversibility, high optical modulation, and enhanced coloration efficiency with fast switching time was prepared using radio frequency (rf) magnetron sputtering technique.

The direct growth of a WO3 nanosheet array on a transparent conducting substrate for highly efficient electrochromic and electrocatalytic applications

CrystEngComm ◽  
2014 ◽  
Vol 16 (30) ◽  
pp. 6866-6872 ◽  
Author(s):  
Guo-fa Cai ◽  
Jiang-ping Tu ◽  
Ding Zhou ◽  
Lu Li ◽  
Jia-heng Zhang ◽  
...  
Keyword(s):  
Cycling Performance ◽  
Optical Modulation ◽  
Switching Speed ◽  
Coloration Efficiency ◽  
Fast Switching ◽  
Nanosheet Array ◽  
Transparent Conducting ◽  
Direct Growth ◽  
Vertically Aligned ◽  
Fast Switching Speed

Vertically aligned WO3 nanosheet films are produced via a hydrothermal method. The WO3 nanosheet films exhibit significant optical modulation, fast switching speed, high coloration efficiency and excellent cycling performance. Outstanding electrocatalysis is also achieved by the films.

Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance

2016 ◽  
Vol 858 ◽  
pp. 1095-1098
Author(s):  
Masayuki Yamamoto ◽  
Yasunori Tanaka ◽  
Tsutomu Yatsuo ◽  
Koji Yano
Keyword(s):  
Switching Speed ◽  
Reverse Transfer ◽  
Switching Device ◽  
Fast Switching ◽  
Static Induction Transistor ◽  
Static Induction ◽  
High Transconductance ◽  
Fast Switching Speed

We investigate a cascode configuration of a normally-on SiC-Buried Gate Static Induction Transistor (SiC-BGSIT) and Si-MOSFET as an alternative switching device of the SiC-MOSFET. It is shown that the transconductance of our cascode device is much higher than that of commercial SiC-MOSFETs while the switching speed is much faster than that of normally-off SiC-BGSITs. The origin of the fast switching speed in this cascode configuration is discussed in terms of a simulated reverse transfer capacitance.

Broadband PXI local oscillator modules with low phase noise and fast switching speed

2011 ◽  
Author(s):  
Alexander Chenakin ◽  
Suresh Ojha ◽  
Shyam Nediyanchath ◽  
Vladimir Bykhovsky ◽  
Steven McClellan ◽  
...  
Keyword(s):  
Phase Noise ◽  
Local Oscillator ◽  
Switching Speed ◽  
Fast Switching ◽  
Low Phase Noise ◽  
Fast Switching Speed

Fast-switching-speed, low-forward-voltage-drop static induction (SI) thyristor

1996 ◽  
Vol 116 (3) ◽  
pp. 107-115 ◽  
Author(s):  
Mitsuhide Maeda ◽  
Takuji Keno ◽  
Yuji Suzuki ◽  
Toshiro Abe
Keyword(s):  
Voltage Drop ◽  
Forward Voltage ◽  
Switching Speed ◽  
Fast Switching ◽  
Forward Voltage Drop ◽  
Static Induction ◽  
Fast Switching Speed
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