Influence of sintering additives on densification and Li+ conductivity of Al doped Li7La3Zr2O12 lithium garnet

RSC Advances ◽  
2014 ◽  
Vol 4 (93) ◽  
pp. 51228-51238 ◽  
Author(s):  
Narayanasamy Janani ◽  
C. Deviannapoorani ◽  
L. Dhivya ◽  
Ramaswamy Murugan

Al–LLZ with 1 wt% of Li4SiO4 added and sintered at 1200 °C was found to be relatively dense which enhances the total (bulk + grain-boundary) Li+ conductivity by reducing the grain-boundary contribution.

2004 ◽  
Vol 19 (9) ◽  
pp. 2750-2758 ◽  
Author(s):  
Mark I. Jones ◽  
Kiyoshi Hirao ◽  
Hideki Hyuga ◽  
Yukihiko Yamauchi

The wear properties under low loads of β Si3N4 and α sialon materials sintered with different rare-earth oxide sintering additives have been studied under dry sliding conditions using block-on-ring wear tests. All the worn surfaces showed an absence of fracture and smooth surfaces with the presence of an oxygen-rich filmlike debris indicating tribochemically induced oxidation of the surfaces. Extensive grain boundary removal was observed on the worn surfaces thought to be due to adhesion between this silicate phase and the tribochemically oxidized surfaces. The resistance to such oxidation and the properties of the residual grain boundary phase are thought to be important parameters affecting the wear behavior under the present testing conditions. For both the β Si3N4 and α sialon materials, there was an increase in wear resistance with decreasing cationic radius of the rare earth, thought to be due to improved oxidation resistance, and this was more remarkable in the case of the sialon materials where the incorporation of the sintering additives into the Si3N4 structure results in a lower amount of residual boundary phase.


2019 ◽  
Vol 6 (2) ◽  
pp. 38-45 ◽  
Author(s):  
G. K. Vdovin ◽  
◽  
A. O. Rudenko ◽  
B. D. Antonov ◽  
V. B. Malkov ◽  
...  

2011 ◽  
Vol 309-310 ◽  
pp. 209-214
Author(s):  
Igor S. Golovin ◽  
Vladislav Yu. Zadorozhnyy

Temperature and amplitude dependent internal friction (TDIF and ADIF) in ultrafine-grained copper (99.95% Cu) specimens processed by equal channel angular extrusion by route BC in 1, 4, and 8 passes and then subjected to annealing is investigated by means of dynamical mechanical analyzer DMA Q800 in the temperature range from -100 to 550 °C, amplitude range from 10-6 to 10-3, and frequency range from 0.05 to 100 Hz. Two IF peaks were registered and explained by structural relaxation due to the recrystallisation process and by thermally activated grain boundary relaxation with broad distribution of relaxation times. Increase in amplitude dependent damping in ultrafine-grained copper is due to dislocation but not grain boundary contribution.


2011 ◽  
Vol 484 ◽  
pp. 52-56
Author(s):  
Katsumi Yoshida ◽  
Yuki Sekimoto ◽  
Keiichi Katayama ◽  
Thanakorn Wasanapiarnpong ◽  
Masamitsu Imai ◽  
...  

Alpha- or beta-Si3N4 powder with larger grain size was uses as starting material, and the effect of heat-treatment on thermal conductivity of Si3N4 ceramics using MgO, Y2O3 and SiO2 as sintering additives was investigated in terms of their microstructure and the amount of grain boundary phase. Most of the components derived from sintering additives existed as glassy phase in sintered Si3N4. After heat-treatment at 1950oC for 8 h, the amount of glassy phase significantly decreased, and then small amount of glassy phase existed in Si3N4 ceramics was crystallized as Y2O3 and Y2Si3N4O3. In the case of Si3N4 ceramics using SN-7 powder, thermal conductivity of heat-treated Si3N4 was around twice of the value of sintered Si3N4, and the thermal conductivity was increased from 41.4 to 87.2 W/m•K due to not only the reduction of grain boundary phase but also the grain growth. In the case of Si3N4 using SN-F1 powder, thermal conductivity of Si3N4 ceramics was also significantly increased from 36.0 to 73.2 W/m•K after heat-treatment. In this case, the reduction of grain boundary phase mainly affected the thermal conductivity of Si3N4 ceramics because the grain size of heat-treated Si3N4 was nearly the same as that of sintered Si3N4. The reduction of grain boundary phase from Si3N4 was effective for the improvement of their thermal conductivity in addition to grain growth of Si3N4.


1978 ◽  
Vol 12 (12) ◽  
pp. 1141-1145 ◽  
Author(s):  
Harold Margolin ◽  
Fakhreddin Hazaveh ◽  
Hiroshi Yaguchi

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