Grain‐Boundary Contribution to the Electrical Resistivity of Iron

1969 ◽  
Vol 40 (9) ◽  
pp. 3459-3464 ◽  
Author(s):  
M. Braunovic ◽  
C. W. Haworth
RSC Advances ◽  
2014 ◽  
Vol 4 (93) ◽  
pp. 51228-51238 ◽  
Author(s):  
Narayanasamy Janani ◽  
C. Deviannapoorani ◽  
L. Dhivya ◽  
Ramaswamy Murugan

Al–LLZ with 1 wt% of Li4SiO4 added and sintered at 1200 °C was found to be relatively dense which enhances the total (bulk + grain-boundary) Li+ conductivity by reducing the grain-boundary contribution.


1999 ◽  
Vol 581 ◽  
Author(s):  
J.L. McCrea ◽  
K.T. Aust ◽  
G. Palumbo ◽  
U. Erb

ABSTRACTThe electrical resistivity as a function of temperature (4K to 673K) of several electrodeposited nanocrystalline materials (Ni, Ni-Fe, Co) has been examined. The contribution of the grain boundaries to the electrical resistivity was quantified in terms of a specific grain boundary resistivity, which was found to be similar to previously reported values of specific grain boundary resistivity for copper and aluminum obtained from studies involving polycrystalline materials. In the high temperature range, the resistivity of the nanocrystalline samples was monitored as a function of time. The observed time dependence of the resistivity at elevated temperatures was correlated to microstructural changes in the material. The study has shown that electrical resistivity is an excellent characterization tool for nanocrystalline materials giving useful information regarding grain size and degree of thermal stability, as well as some insight into the grain growth kinetics at various temperatures.


Author(s):  
T. S. Orlova ◽  
A. M. Mavlyutov ◽  
A. S. Bondarenko ◽  
I. A. Kasatkin ◽  
M. Yu. Murashkin ◽  
...  

2016 ◽  
Vol 123 ◽  
pp. 113-117 ◽  
Author(s):  
Gyuseok Kim ◽  
Xuzhao Chai ◽  
Le Yu ◽  
Xuemei Cheng ◽  
Daniel S. Gianola

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