Trap density probing on top-gate MoS2nanosheet field-effect transistors by photo-excited charge collection spectroscopy

Nanoscale ◽  
2015 ◽  
Vol 7 (13) ◽  
pp. 5617-5623 ◽  
Author(s):  
Kyunghee Choi ◽  
Syed Raza Ali Raza ◽  
Hee Sung Lee ◽  
Pyo Jin Jeon ◽  
Atiye Pezeshki ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Trap Density ◽  
Charge Collection

scholarly journals Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

2014 ◽  
Vol 104 (13) ◽  
pp. 131605 ◽  
Author(s):  
Thenappan Chidambaram ◽  
Dmitry Veksler ◽  
Shailesh Madisetti ◽  
Andrew Greene ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Trap Density ◽  
Oxide Semiconductor ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Hall Method

Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors

2014 ◽  
Vol 61 (4) ◽  
pp. 1510-1515 ◽  
Author(s):  
Jeffrey H. Warner ◽  
Dale McMorrow ◽  
Stephen Buchner ◽  
J. Brad Boos ◽  
Brian R. Bennett ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Collection ◽  
Induced Charge ◽  
Heterojunction Field Effect Transistors

LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO3 HIGH-K DIELECTRIC

2011 ◽  
Vol 20 (01) ◽  
pp. 105-113
Author(s):  
S. RUMYANTSEV ◽  
W. STILLMAN ◽  
M. SHUR ◽  
T. HEEG ◽  
D.G. SCHLOM ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Trap Density ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Enhancement Mode ◽  
High K ◽  
High K Dielectric

Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO 3 high-k dielectric have been fabricated and studied. The low frequency noise was high indicating a high interface density of traps. Trap density and its dependence on the gate voltage have been extracted from the noise and conductance measurements.

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