Ultra-high capacitance hematite thin films with controlled nanoscopic morphologies

Nanoscale ◽  
2014 ◽  
Vol 6 (18) ◽  
pp. 10643-10649 ◽  
Author(s):  
Jingling Liu ◽  
Eunjik Lee ◽  
Yong-Tae Kim ◽  
Young-Uk Kwon
Keyword(s):  
Thin Films ◽  
High Capacitance

Humidity-dependent hematite thin films with two different ultrathin nanoscopic morphologies have been synthesized for remarkable capacitances.

Realization of a high capacitance density in Bi2Mg2∕3Nb4∕3O7 pyrochlore thin films deposited directly on polymer substrates for embedded capacitor applications

2006 ◽  
Vol 89 (23) ◽  
pp. 232910 ◽  
Author(s):  
Jong-Hyun Park ◽  
Cheng-Ji Xian ◽  
Nak-Jin Seong ◽  
Soon-Gil Yoon ◽  
Seung-Hyun Son ◽  
...  
Keyword(s):  
Thin Films ◽  
Capacitance Density ◽  
Polymer Substrates ◽  
High Capacitance ◽  
Embedded Capacitor

Fabrication of High Capacitance Density Capacitor Using Spray Coated Ba0.6Sr0.4TiO3 Thin Films

2018 ◽  
Author(s):  
Emmanuel Tetsi ◽  
Isabelle Bord Majek ◽  
Gilles Philippot ◽  
Cyril Aymonier ◽  
Roxan Lemire ◽  
...  
Keyword(s):  
Thin Films ◽  
Capacitance Density ◽  
High Capacitance

High capacitance density by CaCu3Ti4O12 thin films

2010 ◽  
Vol 108 (7) ◽  
pp. 074103 ◽  
Author(s):  
Patrick Fiorenza ◽  
Raffaella Lo Nigro ◽  
Vito Raineri ◽  
Graziella Malandrino ◽  
Roberta G. Toro ◽  
...  
Keyword(s):  
Thin Films ◽  
Capacitance Density ◽  
High Capacitance

Novel Candidate of c-axis-oriented BLSF Thin Films for High-Capacitance Condenser

2002 ◽  
Vol 748 ◽  
Author(s):  
Takashi Kojima ◽  
Yukio Sakashita ◽  
Takayuki Watanabe ◽  
Kazumi Kato ◽  
Hiroshi Funakubo
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Film Thickness ◽  
Applied Electric Field ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
High Capacitance ◽  
Good Surface ◽  
Electric Field Change ◽  
20 Nm

ABSTRACTc-axis-oriented SrBi2Ta2O9 thin films with various thickness ranging from 20–170 nm were epitaxially grown on (100)SrRuO3 (SrRuO3 is give for the pseudo-cubic unit cell)//(100)SrTiO3 substrates by metalorganic chemical vapor deposition (MOCVD). The relative dielectric constants of these films kept a constant value of about 55 with decreasing film thickness down to 20 nm. The capacitances of these films were almost independent of the applied electric field; change of capacitance for these films on applied electric field from 0 kV/cm to 100 kV/cm was within 0.017 % and tano value was within 1.3 %. The leakage current densities were constant against the film thickness on the order of 10-8 A/cm2 at 150 kV/cm. Surface flatness of these films were also almost the same irrespective of the film thickness. These characteristics are very attractive for high-capacitance condenser application. Therefore, c-axis-oriented BLSF thin films are novel candidates for high-capacitance condenser application having both bias-free and thickness independent characteristics together with the good surface smoothness.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Studies on Water in the Hydration Chamber of a Modified Electron Microscope

1970 ◽  
Vol 28 ◽  
pp. 544-545
Author(s):  
R. C. Moretz ◽  
G. G. Hausner ◽  
D. F. Parsons
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
Steady State ◽  
Room Temperature ◽  
Small Mass ◽  
Equilibrium Pressure ◽  
Biological Objects ◽  
Mechanical Pump ◽  
Differential Pumping

Use of the electron microscope to examine wet objects is possible due to the small mass thickness of the equilibrium pressure of water vapor at room temperature. Previous attempts to examine hydrated biological objects and water itself used a chamber consisting of two small apertures sealed by two thin films. Extensive work in our laboratory showed that such films have an 80% failure rate when wet. Using the principle of differential pumping of the microscope column, we can use open apertures in place of thin film windows.Fig. 1 shows the modified Siemens la specimen chamber with the connections to the water supply and the auxiliary pumping station. A mechanical pump is connected to the vapor supply via a 100μ aperture to maintain steady-state conditions.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Macromolecular structures of biological specimens are not obscured by controlled osmium impregnation

1983 ◽  
Vol 41 ◽  
pp. 606-607
Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Critical Point ◽  
Metal Films ◽  
High Magnification ◽  
Osmium Impregnation ◽  
Instrumental Resolution ◽  
20 Nm ◽  
Continuous Metal

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.

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