Self-ordering of small-diameter metal nanoparticles by dewetting on hexagonal mesh templates

Nanoscale ◽  
2014 ◽  
Vol 6 (17) ◽  
pp. 10106-10112 ◽  
Author(s):  
Eric R. Meshot ◽  
Zhouzhou Zhao ◽  
Wei Lu ◽  
A. John Hart

Self-ordered arrays of metal nanoparticles smaller than 20 nm are formed by dewetting thin films on hexagonal mesh substrates.

Author(s):  
Klaus-Ruediger Peters ◽  
Samuel A. Green

High magnification imaging of macromolecules on metal coated biological specimens is limited only by wet preparation procedures since recently obtained instrumental resolution allows visualization of topographic structures as smal l as 1-2 nm. Details of such dimensions may be visualized if continuous metal films with a thickness of 2 nm or less are applied. Such thin films give sufficient contrast in TEM as well as in SEM (SE-I image mode). The requisite increase in electrical conductivity for SEM of biological specimens is achieved through the use of ligand mediated wet osmiuum impregnation of the specimen before critical point (CP) drying. A commonly used ligand is thiocarbohvdrazide (TCH), first introduced to TEM for en block staining of lipids and glvcomacromolecules with osmium black. Now TCH is also used for SEM. However, after ligand mediated osinification nonspecific osmium black precipitates were often found obscuring surface details with large diffuse aggregates or with dense particular deposits, 2-20 nm in size. Thus, only low magnification work was considered possible after TCH appl ication.


2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).


2011 ◽  
Vol 65 (8) ◽  
pp. 1207-1210 ◽  
Author(s):  
Yaodong Yang ◽  
Jianjun Yao ◽  
Jie-Fang Li ◽  
D. Viehland

1996 ◽  
Vol 63 (4) ◽  
pp. 381-384 ◽  
Author(s):  
W. Gotschy ◽  
K. Vonmetz ◽  
A. Leitner ◽  
F. R. Aussenegg

RSC Advances ◽  
2015 ◽  
Vol 5 (85) ◽  
pp. 69339-69347 ◽  
Author(s):  
Qian Wang ◽  
Xingjuan Zhao ◽  
Xiao-Kai Zhang ◽  
Yong-Ill Lee ◽  
Hong-Guo Liu

A porous polymer film was fabricated at a liquid/liquid interface that can be used as a matrix to form various composite films.


Polymer ◽  
2010 ◽  
Vol 51 (12) ◽  
pp. 2661-2667 ◽  
Author(s):  
E. Bhoje Gowd ◽  
Bhanu Nandan ◽  
Nadja C. Bigall ◽  
Alexander Eychmüller ◽  
Petr Formanek ◽  
...  

Langmuir ◽  
2005 ◽  
Vol 21 (20) ◽  
pp. 9352-9358 ◽  
Author(s):  
Dehui Yin ◽  
Shin Horiuchi ◽  
Masamichi Morita ◽  
Atsushi Takahara

Nanoscale ◽  
2021 ◽  
Vol 13 (38) ◽  
pp. 16216-16225
Author(s):  
Jingjing Wang ◽  
Dayu Zhou ◽  
Wei Dong ◽  
Ziqi Li ◽  
Nana Sun ◽  
...  

20 nm thick Hf-doped ZrO2-based ferroelectric thin films were prepared using all-inorganic salt precursors through the CSD method.


2008 ◽  
Vol 22 (14) ◽  
pp. 2275-2283 ◽  
Author(s):  
WEIDONG CHEN ◽  
LIANGHUAN FENG ◽  
ZHI LEI ◽  
JINGQUAN ZHANG ◽  
FEFE YAO ◽  
...  

Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.


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