A highly conducting graphene film with dual-side molecular n-doping

Nanoscale ◽  
2014 ◽  
Vol 6 (16) ◽  
pp. 9545-9549 ◽  
Author(s):  
Youngsoo Kim ◽  
Jaesung Park ◽  
Junmo Kang ◽  
Je Min Yoo ◽  
Kyoungjun Choi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Chemical Doping ◽  
Simple Method ◽  
Substrate Modification ◽  
N Doping ◽  
Bottom Side

We demonstrate a simple method to tune the electrical properties of graphene synthesized by chemical vapor deposition (CVD) with dual-side chemical doping – the bottom-side doping via substrate modification with NH2-SAMs and the top-side doping with diethylenetriamine (DETA) molecules.

scholarly journals Research on the Preparation and Spectral Characteristics of Graphene/TMDs Hetero-structures

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Tao Han ◽  
Hongxia Liu ◽  
Shulong Wang ◽  
Shupeng Chen ◽  
Kun Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Spectral Characteristics ◽  
Graphene Film ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Si Substrate ◽  
Broadband Absorption ◽  
Gate Effect ◽  
Pressure Chemical

AbstractThe Van der Waals (vdWs) hetero-structures consist of two-dimensional materials have received extensive attention, which is due to its attractive electrical and optoelectronic properties. In this paper, the high-quality large-size graphene film was first prepared by the chemical vapor deposition (CVD) method; then, graphene film was transferred to SiO2/Si substrate; next, the graphene/WS2 and graphene/MoS2 hetero-structures were prepared by the atmospheric pressure chemical vapor deposition method, which can be achieved by directly growing WS2 and MoS2 material on graphene/SiO2/Si substrate. Finally, the test characterization of graphene/TMDs hetero-structures was performed by AFM, SEM, EDX, Raman and PL spectroscopy to obtain and grasp the morphology and luminescence laws. The test results show that graphene/TMDs vdWs hetero-structures have the very excellent film quality and spectral characteristics. There is the built-in electric field at the interface of graphene/TMDs heterojunction, which can lead to the effective separation of photo-generated electron–hole pairs. Monolayer WS2 and MoS2 material have the strong broadband absorption capabilities, the photo-generated electrons from WS2 can transfer to the underlying p-type graphene when graphene/WS2 hetero-structures material is exposed to the light, and the remaining holes can induced the light gate effect, which is contrast to the ordinary semiconductor photoconductors. The research on spectral characteristics of graphene/TMDs hetero-structures can pave the way for the application of novel optoelectronic devices.

Electrical properties of GaP on Si grown by metalorganic chemical vapor deposition

1993 ◽  
Vol 132 (3-4) ◽  
pp. 414-418 ◽  
Author(s):  
T. Soga ◽  
T. Suzuki ◽  
M. Mori ◽  
Z.K. Jiang ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Metalorganic Chemical

Enhancement of the Electrical Properties of Graphene Grown by Chemical Vapor Deposition via Controlling the Effects of Polymer Residue

Nano Letters ◽  
2013 ◽  
Vol 13 (4) ◽  
pp. 1462-1467 ◽  
Author(s):  
Ji Won Suk ◽  
Wi Hyoung Lee ◽  
Jongho Lee ◽  
Harry Chou ◽  
Richard D. Piner ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor
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