Nonclassical Crystallization in Low-Temperature Deposition of Crystalline Silicon by Hot-Wire Chemical Vapor Deposition

2014 ◽  
Vol 14 (12) ◽  
pp. 6239-6247 ◽  
Author(s):  
Seung-Wan Yoo ◽  
Ju-Seop Hong ◽  
Sung-Soo Lee ◽  
Chan-Soo Kim ◽  
Tae-Sung Kim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Low temperature deposition of crystalline silicon on glass by hot wire chemical vapor deposition

2011 ◽  
Vol 327 (1) ◽  
pp. 57-62 ◽  
Author(s):  
Yung-Bin Chung ◽  
Hyung-Ki Park ◽  
Dong-Kwon Lee ◽  
Wook Jo ◽  
Jean-Ho Song ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Low Temperature Deposition ◽  
Temperature Deposition

Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition

2006 ◽  
Vol 527-529 ◽  
pp. 1079-1082 ◽  
Author(s):  
Shiro Hino ◽  
Tomohiro Hatayama ◽  
Naruhisa Miura ◽  
Tatsuo Ozeki ◽  
Eisuke Tokumitsu
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Low Temperature Deposition ◽  
Temperature Deposition ◽  
Metalorganic Chemical

Low temperature deposition of HfO2 films on 4H-SiC(0001) substrates by pulse introduced metalorganic chemical vapor deposition (MOCVD) using tetrakis-diethylamido-hafnium [Hf[N(C2H5)2]4, (TDEAH)] and H2O has been investigated. HfO2 films with relatively low leakage current density of 10-4 A/cm2 were obtained even at a deposition temperature as low as 190 °C. We demonstrate that the HfO2/SiC interface, where the HfO2 was deposited at 190 °C, has lower interface state density than a typical thermally-grown SiO2/SiC interface. It is also shown by X-ray photoelectron spectroscopy (XPS) that the HfO2/SiC structure fabricated at 190 °C has lower SiOx count than the HfO2/SiC structure fabricated at 400 °C.

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