scholarly journals Optimization of thermoelectric efficiency in SnTe: the case for the light band

2014 ◽  
Vol 16 (38) ◽  
pp. 20741-20748 ◽  
Author(s):  
Min Zhou ◽  
Zachary M. Gibbs ◽  
Heng Wang ◽  
Yemao Han ◽  
Caini Xin ◽  
...  

Enhanced thermoelectric properties of SnTe are obtained by counter-doping with iodine as predicted using a two-valence-band model.

Author(s):  
Issei Suzuki ◽  
Zexin Lin ◽  
Sakiko Kawanishi ◽  
Kiyohisa Tanaka ◽  
Yoshitaro Nose ◽  
...  

Valence band dispersions of single-crystalline SnS1-xSex solid solutions were observed by angle-resolved photoemission spectroscopy (ARPES). The hole effective masses, crucial factors in determining thermoelectric properties, were directly evaluated. They decrease...


2017 ◽  
Vol 4 (9) ◽  
pp. 1458-1464 ◽  
Author(s):  
M.-Y. Lee ◽  
D. I. Bilc ◽  
E. Symeou ◽  
Y.-C. Lin ◽  
I.-C. Liang ◽  
...  

A new p-type semiconductor Ba3Ag3InTe6 with transport properties dominated by the layer [Ag3Te4]5− distributed in the valence band.


2021 ◽  
Author(s):  
Bo Feng

Abstract The effect of Ti doped at Cu site on the thermoelectric properties of BiCuSeO was studied by experimental method and first principles calculation. The results show that Ti doping can cause the lattice contraction and decrease the lattice constant. Ti doping can increase the band gap and lengthen the Cu/Ti-Se bond, resulting in the decrease of carrier concentration. Ti doping can reduce the effective mass and the Bi-Se bond length, correspondingly improve the carrier mobility. Ti doping can decrease the density of states of Cu-3d and Se-4p orbitals at the top of valence band, but Ti-4p orbitals can obviously increase the density of states at the top of valence band and finally increase the electrical conductivity in the whole temperature range. With the decrease of effective mass, Ti doping would reduce the Seebeck coefficient, but the gain effect caused by the increase of electrical conductivity is more than the benefit reduction effect caused by the decrease of Seebeck coefficient, and the power factor shows an upward trend. Ti doping can reduce Young's modulus, lead to the increase of defect scattering and strain field, correspondingly reduce the lattice thermal conductivity and total thermal conductivity. It is greatly increased for the ZT values in the middle and high temperature range, with the highest value of 1.04 at 873 K.


2010 ◽  
Vol 1267 ◽  
Author(s):  
Ioannis Androulakis ◽  
Ilyia Todorov ◽  
Duck Young Chung ◽  
Sedat Ballikaya ◽  
Guoyu Wang ◽  
...  

AbstractWe explored the effect of K and K-Na substitution for Pb atoms in the lattice of PbTe, in an effort to test a hypothesis for the development of a resonant state that may enhance the thermoelectric power. At 300K the data can adequately be explained by a combination of a single and two-band model for the valence band of PbTe depending on hole density that varies in the range 1-15 × 1019 cm-3. A change in scattering mechanism was observed in the temperature dependence of the electrical conductivity, σ, for samples concurrently doped with K and Na which results in significantly enhanced σ at elevated temperatures and hence power factors. Thermal conductivity data provide evidence of a strong interaction between the light- and the heavy-hole valence bands at least up to 500K. Figure of merits as high as 1.3 at 700K were measured as a result of the enhanced power factors.


2020 ◽  
Vol 8 (7) ◽  
pp. 3978-3987 ◽  
Author(s):  
Raza Moshwan ◽  
Wei-Di Liu ◽  
Xiao-Lei Shi ◽  
Qiang Sun ◽  
Han Gao ◽  
...  

In eco-friendly SnTe thermoelectrics, In and Ag co-doping induces the synergistic effect of resonance energy levels and valence band convergence to enhance its electrical transport properties, while defects ameliorates its thermal transport.


Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 140 ◽  
Author(s):  
Ji Hoon Kim ◽  
Seunggun Yu ◽  
Sang Won Lee ◽  
Seung-Yong Lee ◽  
Keun Soo Kim ◽  
...  

Recently, two-dimensional tungsten disulfide (WS2) has attracted attention as a next generation thermoelectric material due to a favorable Seebeck coefficient. However, its thermoelectric efficiency still needs to be improved due to the intrinsically low electrical conductivity of WS2. In the present study, thermoelectric properties of WS2 hybridized with highly conductive single-walled carbon nanohorns (SWCNHs) were investigated. The WS2/SWCNH nanocomposites were fabricated by annealing the mixture of WS2 and SWCNHs using a high-frequency induction heated sintering (HFIHS) system. By adding SWCNHs to WS2, the nanocomposites exhibited increased electrical conductivity and a slightly decreased Seebeck coefficient with the content of SWCNHs. Hence, the maximum power factor of 128.41 μW/mK2 was achieved for WS2/SWCNHs with 0.1 wt.% SWCNHs at 780 K, resulting in a significantly improved thermoelectric figure of merit (zT) value of 0.027 compared to that of pristine WS2 with zT 0.017.


2014 ◽  
Vol 16 (25) ◽  
pp. 12900-12908 ◽  
Author(s):  
K. Zberecki ◽  
R. Swirkowicz ◽  
M. Wierzbicki ◽  
J. Barnaś

Using ab initio methods we calculate thermoelectric and spin thermoelectric properties of silicene nanoribbons with bare, mono-hydrogenated and di-hydrogenated edges.


2015 ◽  
Vol 3 (37) ◽  
pp. 9559-9564 ◽  
Author(s):  
I. Cohen ◽  
M. Kaller ◽  
G. Komisarchik ◽  
D. Fuks ◽  
Y. Gelbstein

In an attempt to reduce our reliance on fossil fuels, associated with severe environmental effects, the current research is focused on the enhancement of the direct thermal to electrical thermoelectric efficiency of n-type PbTe by Na and Cl co-doping.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Seungjun Lee ◽  
Jeong-Pil Song ◽  
Seoung-Hun Kang ◽  
Young-Kyun Kwon

AbstractWe performed density functional theory calculations to investigate the thermoelectric properties of phosphorene oxide (PO) expected to form by spontaneous oxidation of phosphorene. Since thermoelectric features by nature arise from the consequences of the electron-phonon interaction, we computed the phonon-mediated electron relaxation time, which was fed into the semiclassical Boltzmann transport equation to be solved for various thermoelectric-related quantities. It was found that PO exhibits superior thermoelectric performance compared with its pristine counterpart, which has been proposed to be a candidate for the use of future thermoelectric applications. We revealed that spontaneous oxidation of phosphorene leads to a significant enhancement in the thermoelectric properties of n-doped phosphorene oxide, which is attributed to the considerable reduction of lattice thermal conductivity albeit a small decrease in electrical conductivity. Our results suggest that controlling oxidation may be utilized to improve thermoelectric performance in nanostructures, and PO can be a promising candidate for low-dimensional thermoelectric devices.


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