Analysis of high-temperature thermoelectric properties ofp-type CoSb3within a two-valence-band and two-conduction-band model

2014 ◽  
Vol 115 (20) ◽  
pp. 203716 ◽  
Author(s):  
Y. Kajikawa
2014 ◽  
Vol 16 (38) ◽  
pp. 20741-20748 ◽  
Author(s):  
Min Zhou ◽  
Zachary M. Gibbs ◽  
Heng Wang ◽  
Yemao Han ◽  
Caini Xin ◽  
...  

Enhanced thermoelectric properties of SnTe are obtained by counter-doping with iodine as predicted using a two-valence-band model.


1986 ◽  
Vol 67 ◽  
Author(s):  
S. Zemon ◽  
S. K. Shastry ◽  
P. Norris ◽  
C. Jagannath ◽  
G. Lambert

ABSTRACTThe photoluminescence of GaAs/Si grown by OMCVD has been analyzed as a function of temperature and the dominant high temperature line identified as a conduction-band-to-valence-band transition. Photoluminescence excitation spectra indicate that the transition is excitonic at 4.2 K. A second line, also identified as intrinsic, dominates the spectra below 100 K. A biaxial tensile strain is proposed to account for the two intrinsic lines through a splitting of the valence band degeneracy.


1972 ◽  
Vol 50 (11) ◽  
pp. 1068-1077 ◽  
Author(s):  
Joseph Basinski ◽  
Clarence C. Y. Kwan ◽  
John C. Woolley

Measurements of resistivity and Hall coefficient as a function of magnetic field (0–3.2 Wb/m2) and temperature (25–200 C) have been made on samples of Te-doped GaSb. The results have been analyzed in terms of a two-conduction-band model with minima at Γ1 and L1, using the method reported by Kwan et al. This analysis yields a value for the Γ1–L1 band separation of 0.097 ± 0.002 eV, when linearly extrapolated to 0 K, and a temperature coefficient of −3.4 × 10−5 eV/K. The measurements of the Hall coefficient at 0.87 Wb/m2 and the zero-field resistivity have been extended to 360 C. These data have been analyzed using a four-band model (Γ1, L1X1, and Γ15 V), thus giving the temperature dependence of electron mobility in the Γ1 and L1 bands. The electron mobility values for the L1 band have then been fitted to a semiempirical relation, obtained by assuming appropriate scattering mechanisms.


2007 ◽  
Vol 27 (2-3) ◽  
pp. 813-817 ◽  
Author(s):  
K. Park ◽  
K.Y. Ko ◽  
W.-S. Seo ◽  
W.-S. Cho ◽  
J.-G. Kim ◽  
...  

2014 ◽  
Vol 50 (1) ◽  
pp. 34-39 ◽  
Author(s):  
Yongkwan Dong ◽  
Pooja Puneet ◽  
Terry M. Tritt ◽  
George S. Nolas

2014 ◽  
Vol 44 (6) ◽  
pp. 1803-1808 ◽  
Author(s):  
Deepanshu Srivastava ◽  
F. Azough ◽  
M. Molinari ◽  
S. C. Parker ◽  
R. Freer

Author(s):  
Issei Suzuki ◽  
Zexin Lin ◽  
Sakiko Kawanishi ◽  
Kiyohisa Tanaka ◽  
Yoshitaro Nose ◽  
...  

Valence band dispersions of single-crystalline SnS1-xSex solid solutions were observed by angle-resolved photoemission spectroscopy (ARPES). The hole effective masses, crucial factors in determining thermoelectric properties, were directly evaluated. They decrease...


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