Synthesis of free-standing, curved Si nanowires through mechanical failure of a catalyst during metal assisted chemical etching

2014 ◽  
Vol 16 (26) ◽  
pp. 13402-13408 ◽  
Author(s):  
Chang Quan Lai ◽  
W. K. Choi
Keyword(s):  
Chemical Etching ◽  
Metal Films ◽  
Mechanical Failure ◽  
Si Nanowires ◽  
Free Standing ◽  
Metal Assisted Chemical Etching

Perforated metal films on Si are designed to tear and rotate during etching, leading to curved nanowire formation.

scholarly journals Study of Si Nanowires Produced by Metal-Assisted Chemical Etching as a Light-Trapping Material in n-type c-Si Solar Cells

ACS Omega ◽  
2018 ◽  
Vol 3 (9) ◽  
pp. 10898-10906 ◽  
Author(s):  
Ioannis Leontis ◽  
Martha A. Botzakaki ◽  
Stavroula N. Georga ◽  
A. Galiouna Nassiopoulou
Keyword(s):  
Solar Cells ◽  
Chemical Etching ◽  
Light Trapping ◽  
Si Nanowires ◽  
Si Solar Cells ◽  
Type C ◽  
Metal Assisted Chemical Etching

Pathway of Porous Silicon Formation Inside Si Nanowires Throughout Metal Assisted Etching

2012 ◽  
Vol 1408 ◽  
Author(s):  
Alexander A. Tonkikh ◽  
Nadine Geyer ◽  
Bodo Fuhrmann ◽  
Hartmut S. Leipner ◽  
Peter Werner
Keyword(s):  
Porous Silicon ◽  
Molecular Beam Epitaxy ◽  
Chemical Etching ◽  
Molecular Beam ◽  
Semiconductor Surface ◽  
Si Nanowires ◽  
Dissolution Reaction ◽  
Metal Assisted Chemical Etching ◽  
Hole Current ◽  
Selective Formation

ABSTRACTThe selective formation of porous silicon in nanowires is observed in Si/Ge epitaxial layers along Ge layers grown by molecular beam epitaxy on a Si(100) substrate after metal-assisted chemical etching in aqueous HF-H2O2 solution. We assume that Ge layers serve as channels for a hole current out of the semiconductor to sustain the dissolution reaction. The tunnelling of holes through the potential barrier at the semiconductor surface is assumed to be the dominating mechanism of the hole transfer to the electrolyte.

A systematic study of silicon nanowires array fabricated through metal-assisted chemical etching

2020 ◽  
Vol 92 (3) ◽  
pp. 30402
Author(s):  
Shiying Zhang ◽  
Zhenhua Li ◽  
Qingjun Xu
Keyword(s):  
Electron Microscopy ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Optimal Solution ◽  
Solution Concentration ◽  
Etching Time ◽  
Si Nanowires ◽  
Selected Area Electron Diffraction ◽  
Initial Silicon ◽  
Metal Assisted Chemical Etching

Aligned and uniform silicon nanowires (SiNWs) arrays were fabricated with good controllability and reproducibility by metal-assisted chemical etching in aqueous AgNO3/HF etching solutions in atmosphere. The SiNWs formed on silicon were characterized by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). The results show that the as-prepared SiNWs are perfectly single crystals and the axial orientation of the Si nanowires is identified to be parallel to the [111] direction, which is identical to the initial silicon wafer. In addition, a series of experiments were conducted to study the effects of etching conditions such as solution concentration, etching time, and etching temperature on SiNWs. And the optimal solution concentrations for SiNWs have been identified. The formation mechanism of silicon nanowires and silver dendrites were also discussed.

Metal-assisted chemical etching of silicon with different metal films and clusters: a review

2016 ◽  
Author(s):  
O. Pyatilova ◽  
S. Gavrilov ◽  
A. Sysa ◽  
A. Savitskiy ◽  
A. Shuliatyev ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Metal Films ◽  
Metal Assisted Chemical Etching

scholarly journals Correction to: Facile morphology control of high aspect ratio patterned Si nanowires by metal-assisted chemical etching

2018 ◽  
Vol 29 (21) ◽  
pp. 18178-18178 ◽  
Author(s):  
Indrajit V. Bagal ◽  
Muhammad Ali Johar ◽  
Mostafa Afifi Hassan ◽  
Aadil Waseem ◽  
Sang-Wan Ryu
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Morphology Control ◽  
Si Nanowires ◽  
Metal Assisted Chemical Etching
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