Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode

2014 ◽  
Vol 16 (31) ◽  
pp. 16367 ◽  
Author(s):  
Seyed Hossein Hosseini Shokouh ◽  
Syed Raza Ali Raza ◽  
Hee Sung Lee ◽  
Seongil Im
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Classical Logic ◽  
Zno Nanowire

High Temperature capable SiC Schottky diodes, based on buried grid design.

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000058-000060
Author(s):  
Tomas Hjort ◽  
Adolf Schöner ◽  
Andy Zhang ◽  
Mietek Bakowski ◽  
Jang-Kwon Lim ◽  
...  
Keyword(s):  
High Temperature ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Electrical Characteristics ◽  
Schottky Barrier Diodes ◽  
Grid Design ◽  
High Temperature Operation

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

Synthesis of an electrically conductive square planar copper(ii) complex and its utilization in the fabrication of a photosensitive Schottky diode device and DFT study

2020 ◽  
Vol 44 (27) ◽  
pp. 11622-11630 ◽  
Author(s):  
Samim Khan ◽  
Soumi Halder ◽  
Arka Dey ◽  
Basudeb Dutta ◽  
Partha Pratim Ray ◽  
...  
Keyword(s):  
Charge Transport ◽  
Schottky Barrier ◽  
Schottky Diode ◽  
Chain Structure ◽  
Dft Study ◽  
Electrically Conductive ◽  
Π Interactions ◽  
Square Planar ◽  
Efficient Charge ◽  
Diode Behavior

A naphthalene based square planar copper(ii) complex shows significant C–H⋯π interactions to form a supramolecular chain structure. The complex shows efficient charge transport and reveals Schottky barrier diode behavior.

Investigation of electron beam detection properties of ZnO nanowire based back-to-back double Schottky diode

RSC Advances ◽  
2014 ◽  
Vol 4 (25) ◽  
pp. 12743 ◽  
Author(s):  
Xin Li ◽  
Junjie Qi ◽  
Qi Zhang ◽  
Zengze Wang ◽  
Shengnan Lu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Schottky Diode ◽  
Zno Nanowire

Electrical Contact Tunable Direct Printing Route for a ZnO Nanowire Schottky Diode

Nano Letters ◽  
2010 ◽  
Vol 10 (9) ◽  
pp. 3517-3523 ◽  
Author(s):  
Tae Il Lee ◽  
Won Jin Choi ◽  
Jyoti Prakash Kar ◽  
Youn Hee Kang ◽  
Joo Hee Jeon ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Electrical Contact ◽  
Zno Nanowire ◽  
Direct Printing

scholarly journals Surface Modification on the Sputtering-Deposited ZnO Layer for ZnO-Based Schottky Diode

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
Ren-Hao Chang ◽  
Kai-Chao Yang ◽  
Tai-Hong Chen ◽  
Li-Wen Lai ◽  
Tsung-Hsin Lee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Ohmic Contact ◽  
Indium Tin Oxide ◽  
Photoelectron Spectroscopy ◽  
Layer Surface ◽  
Barrier Heights ◽  
Ammonium Sulfide ◽  
Current Voltage ◽  
Contact Electrode

We prepare a zinc oxide- (ZnO-) based Schottky diode constructed from the transparent cosputtered indium tin oxide- (ITO-) ZnO ohmic contact electrode and Ni/Au Schottky metal. After optimizing the ohmic contact property and removing the ion-bombardment damages using dilute HCl etching solution, the dilute hydrogen peroxide (H2O2) and ammonium sulfide (NH4)2Sxsolutions, respectively, are employed to modify the undoped ZnO layer surface. Both of the Schottky barrier heights with the ZnO layer surface treated by these two solutions, evaluated from the current-voltage (I-V) and capacitance-voltage (C-V) measurements, are remarkably enhanced as compared to the untreated ZnO-based Schottky diode. Through the X-ray photoelectron spectroscopy (XPS) and room-temperature photoluminescence (RTPL) investigations, the compensation effect as evidence of the increases in the O–H and OZnacceptor defects appearing on the ZnO layer surface after treating by the dilute H2O2solution is responsible for the improvement of the ZnO-based Schottky diode. By contrast, the enhancement on the Schottky barrier height for the ZnO layer surface treated by using dilute (NH4)2Sxsolution is attributed to both the passivation and compensation effects originating from the formation of the Zn–S chemical bond andVZnacceptors.

Temperature Dependent DC and RF Performance of n-GaN Schottky Diode: A Numerical Approach

2014 ◽  
Vol 895 ◽  
pp. 439-443
Author(s):  
Tarriq Munir ◽  
Azlan Abdul Aziz ◽  
Mat Johar Abdullah ◽  
Mohd Fadzil Ain
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Insertion Loss ◽  
Ideality Factor ◽  
Series Resistance ◽  
Thermionic Emission ◽  
Numerical Approach ◽  
Temperature Dependent ◽  
In Series ◽  
Rf Performance

This paper reports the temperature dependent DC and RF characteristics of n-GaN Schottky diode simulated using Atlas/Blaze developed by Silvaco. It was found that as the temperature increases from 300K to 900K the forward current decreases due to lowering of the Schottky barrier with an increase in series-resistance and ideality factor. These observations indicates that tunneling behavior dominates the current flow rather than thermionic emission. Furthermore, the breakdown voltage decreases in reverse bias and insertion loss for RF behavior increases with respect to temperature due to the increase in capacitance near diode junction.Keywords: Atlas/Blaze, Schottky barrier, series resistance, ideality factor, insertion loss.

scholarly journals Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation

2018 ◽  
Vol 15 (11) ◽  
pp. 803-809
Author(s):  
Doldet TANTRAVIWAT ◽  
Wittawat YAMWONG ◽  
Udom TECHAKIJKAJORN ◽  
Kazuo IMAI ◽  
Burapat INCEESUNGVORN
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Diode ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Implantation Technique ◽  
Metal Line ◽  
Type Silicon ◽  
Boron Implantation ◽  
Line Process

Herein, boron implantation technique was employed to engineer the Schottky barrier height (SBH) of Ti/n-type silicon junction (Ti/n-Si). The Ti/n-Si Schottky diodes with boron doses of 4, 5.4 and 6.6´1012 cm-2 at the energy of 25 keV were fabricated with improved rectification and their effective SBHs increased from 0.49 to 0.95. The tuning of the effective SBH is mainly attributed to the presence of shallow p-layer, which modifies the energy band at Ti/n-Si interface. This work clearly shows that the ability to precisely control the SBH, regardless of the metal work function, would facilitate the implementation of Schottky diode into various semiconductor structures, such as MPS (Merged PiN Schottky) diode, in order to improve performance without major modification on the existing metal line process.

A tetranuclear nickel/lead complex with a salen type Schiff base: synthesis, structure and exploration of photosensitive Schottky barrier diode behaviour

2019 ◽  
Vol 43 (13) ◽  
pp. 5020-5031 ◽  
Author(s):  
Sourav Roy ◽  
Arka Dey ◽  
Michael G. B. Drew ◽  
Partha Pratim Ray ◽  
Shouvik Chattopadhyay
Keyword(s):  
Schiff Base ◽  
Charge Transfer ◽  
Schottky Barrier ◽  
Schottky Diode ◽  
Schottky Barrier Diode ◽  
Kinetics Of ◽  
Lead Complex ◽  
Nickel Lead

A tetranuclear nickel(ii)/lead(ii) complex has been synthesized and characterized. The complex based device behaves as a Schottky diode. The charge transfer kinetics of the complex is enhanced after light soaking.

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