Epitaxial growth of vertically aligned ZnO nanowires for bidirectional direct-current driven light-emitting diodes applications

CrystEngComm ◽  
2015 ◽  
Vol 17 (1) ◽  
pp. 40-49 ◽  
Author(s):  
Zhi-Feng Shi ◽  
Yuan-Tao Zhang ◽  
Xi-Jun Cui ◽  
Shi-Wei Zhuang ◽  
Bin Wu ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Direct Current ◽  
Light Emitting Diodes ◽  
Zno Nanowires ◽  
Light Emitting ◽  
Vertically Aligned

scholarly journals Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Ye Yu ◽  
Tao Wang ◽  
Xiufang Chen ◽  
Lidong Zhang ◽  
Yang Wang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Light Emitting Diodes ◽  
Nitrogen Plasma ◽  
Biaxial Stress ◽  
Organic Chemical ◽  
Graphene Surface ◽  
Light Emitting ◽  
Long Wavelength ◽  
Pre Treatment ◽  
Wavelength Light

AbstractStrain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition. Its pre-treatment with nitrogen-plasma can introduce C–N dangling bonds, which provides nucleation sites for subsequent epitaxial growth. The scanning transmission electron microscopy measurements confirm that part of graphene surface was etched by nitrogen-plasma. We study the growth behavior on different areas of graphene surface after pre-treatment, and propose a growth model to explain the epitaxial growth mechanism of GaN films on graphene. Significantly, graphene is found to be effective to reduce the biaxial stress in GaN films and the strain relaxation improves indium-atom incorporation in InGaN/GaN multiple quantum wells (MQWs) active region, which results in the obvious red-shift of light-emitting wavelength of InGaN/GaN MQWs. This work opens up a new way for the fabrication of GaN-based long wavelength light-emitting diodes.

Room-temperature direct current operation of 290 nm light-emitting diodes with milliwatt power levels

2004 ◽  
Vol 84 (17) ◽  
pp. 3394-3396 ◽  
Author(s):  
A. J. Fischer ◽  
A. A. Allerman ◽  
M. H. Crawford ◽  
K. H. A. Bogart ◽  
S. R. Lee ◽  
...  
Keyword(s):  
Direct Current ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Current Operation

Synthesis and characterization of PEDOT:PSS/ZnO nanowires heterojunction on ITO coated plastic substrate for light-emitting diodes

2019 ◽  
Vol 15 ◽  
pp. 394-399
Author(s):  
Kanchana Shahi ◽  
RS Singh ◽  
Narendra P. Singh ◽  
Mariya Aleksandrova ◽  
Ajaya Kumar Singh
Keyword(s):  
Light Emitting Diodes ◽  
Zno Nanowires ◽  
Plastic Substrate ◽  
Synthesis And Characterization ◽  
Light Emitting

A Comparative Study of GaN-Based Direct Current and Alternating Current High Voltage Light-Emitting Diodes

2018 ◽  
Vol 215 (10) ◽  
pp. 1700554 ◽  
Author(s):  
Shengjun Zhou ◽  
Yilin Gao ◽  
Chenju Zheng ◽  
Yingce Liu ◽  
Hongpo Hu ◽  
...  
Keyword(s):  
Comparative Study ◽  
High Voltage ◽  
Direct Current ◽  
Light Emitting Diodes ◽  
Alternating Current ◽  
Light Emitting
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