scholarly journals Light-Emitting Diodes: Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019)

2019 ◽  
Vol 6 (16) ◽  
pp. 1970102
Author(s):  
Suresh Sundaram ◽  
Xin Li ◽  
Yacine Halfaya ◽  
Taha Ayari ◽  
Gilles Patriarche ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Epitaxial Growth ◽  
Light Emitting Diodes ◽  
Van Der Waals ◽  
Large Area ◽  
Light Emitting

Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride

2019 ◽  
Vol 6 (16) ◽  
pp. 1900207 ◽  
Author(s):  
Suresh Sundaram ◽  
Xin Li ◽  
Yacine Halfaya ◽  
Taha Ayari ◽  
Gilles Patriarche ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Epitaxial Growth ◽  
Van Der Waals ◽  
Large Area

A Multifunctional Molecular Modifier Enabling Efficient Large-Area Perovskite Light-Emitting Diodes

2020 ◽  
Author(s):  
Haoran Wang ◽  
Xiwen Gong ◽  
Dewei Zhao ◽  
Yong-Biao Zhao ◽  
Sheng Wang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Large Area ◽  
Light Emitting

scholarly journals Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Ye Yu ◽  
Tao Wang ◽  
Xiufang Chen ◽  
Lidong Zhang ◽  
Yang Wang ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Light Emitting Diodes ◽  
Nitrogen Plasma ◽  
Biaxial Stress ◽  
Organic Chemical ◽  
Graphene Surface ◽  
Light Emitting ◽  
Long Wavelength ◽  
Pre Treatment ◽  
Wavelength Light

AbstractStrain modulation is crucial for heteroepitaxy such as GaN on foreign substrates. Here, the epitaxy of strain-relaxed GaN films on graphene/SiC substrates by metal-organic chemical vapor deposition is demonstrated. Graphene was directly prepared on SiC substrates by thermal decomposition. Its pre-treatment with nitrogen-plasma can introduce C–N dangling bonds, which provides nucleation sites for subsequent epitaxial growth. The scanning transmission electron microscopy measurements confirm that part of graphene surface was etched by nitrogen-plasma. We study the growth behavior on different areas of graphene surface after pre-treatment, and propose a growth model to explain the epitaxial growth mechanism of GaN films on graphene. Significantly, graphene is found to be effective to reduce the biaxial stress in GaN films and the strain relaxation improves indium-atom incorporation in InGaN/GaN multiple quantum wells (MQWs) active region, which results in the obvious red-shift of light-emitting wavelength of InGaN/GaN MQWs. This work opens up a new way for the fabrication of GaN-based long wavelength light-emitting diodes.

scholarly journals Efficient and large-area all vacuum-deposited perovskite light-emitting diodes via spatial confinement

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Peipei Du ◽  
Jinghui Li ◽  
Liang Wang ◽  
Liang Sun ◽  
Xi Wang ◽  
...  
Keyword(s):  
High Resolution ◽  
Large Scale ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Scale Production ◽  
Nonradiative Recombination ◽  
Large Area ◽  
Spatial Confinement ◽  
Light Emitting ◽  
Large Scale Production

AbstractWith rapid advances of perovskite light-emitting diodes (PeLEDs), the large-scale fabrication of patterned PeLEDs towards display panels is of increasing importance. However, most state-of-the-art PeLEDs are fabricated by solution-processed techniques, which are difficult to simultaneously achieve high-resolution pixels and large-scale production. To this end, we construct efficient CsPbBr3 PeLEDs employing a vacuum deposition technique, which has been demonstrated as the most successful route for commercial organic LED displays. By carefully controlling the strength of the spatial confinement in CsPbBr3 film, its radiative recombination is greatly enhanced while the nonradiative recombination is suppressed. As a result, the external quantum efficiency (EQE) of thermally evaporated PeLED reaches 8.0%, a record for vacuum processed PeLEDs. Benefitting from the excellent uniformity and scalability of the thermal evaporation, we demonstrate PeLED with a functional area up to 40.2 cm2 and a peak EQE of 7.1%, representing one of the most efficient large-area PeLEDs. We further achieve high-resolution patterned perovskite film with 100 μm pixels using fine metal masks, laying the foundation for potential display applications. We believe the strategy of confinement strength regulation in thermally evaporated perovskites provides an effective way to process high-efficiency and large-area PeLEDs towards commercial display panels.

Passive cooling of large-area organic light-emitting diodes

2013 ◽  
Vol 14 (8) ◽  
pp. 1939-1945 ◽  
Author(s):  
Philipp Schwamb ◽  
Thilo C.G. Reusch ◽  
Christoph J. Brabec
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Passive Cooling ◽  
Large Area ◽  
Light Emitting ◽  
Organic Light

scholarly journals GaN-Based Light-Emitting Diodes with Graphene Buffers for Their Application to Large-Area Flexible Devices

2017 ◽  
Vol E100.C (2) ◽  
pp. 161-165 ◽  
Author(s):  
Jitsuo OHTA ◽  
Jeong Woo SHON ◽  
Kohei UENO ◽  
Atsushi KOBAYASHI ◽  
Hiroshi FUJIOKA
Keyword(s):  
Light Emitting Diodes ◽  
Large Area ◽  
Light Emitting ◽  
Flexible Devices

scholarly journals High-performance large-area quasi-2D perovskite light-emitting diodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Changjiu Sun ◽  
Yuanzhi Jiang ◽  
Minghuan Cui ◽  
Lu Qiao ◽  
Junli Wei ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Intermediate Phase ◽  
Formation Enthalpy ◽  
Phase Segregation ◽  
Phase Changes ◽  
Large Area ◽  
High Brightness ◽  
Light Emitting ◽  
Performance Decline

AbstractSerious performance decline arose for perovskite light-emitting diodes (PeLEDs) once the active area was enlarged. Here we investigate the failure mechanism of the widespread active film fabrication method; and ascribe severe phase-segregation to be the reason. We thereby introduce L-Norvaline to construct a COO−-coordinated intermediate phase with low formation enthalpy. The new intermediate phase changes the crystallization pathway, thereby suppressing the phase-segregation. Accordingly, high-quality large-area quasi-2D films with desirable properties are obtained. Based on this, we further rationally adjusted films’ recombination kinetics. We reported a series of highly-efficient green quasi-2D PeLEDs with active areas of 9.0 cm2. The peak EQE of 16.4% is achieved in <n > = 3, represent the most efficient large-area PeLEDs yet. Meanwhile, high brightness device with luminance up to 9.1 × 104 cd m−2 has achieved in <n> = 10 film.

Surface Cleaning Challenges for Organic Light Emitting Diodes

2021 ◽  
Vol 314 ◽  
pp. 3-8
Author(s):  
Noel Giebink
Keyword(s):  
Light Emitting Diodes ◽  
Surface Cleaning ◽  
Organic Light Emitting Diodes ◽  
Large Area ◽  
Light Emitting ◽  
Organic Light ◽  
Organic Optoelectronic Devices ◽  
Soft Thin Film ◽  
Organic Optoelectronic

Organic optoelectronic devices such as light-emitting diodes and solar cells present unique challenges for surface cleaning and preparation because of their large area and the ‘soft’, thin film nature of the materials involved. This paper gives an introduction to this class of semiconductor devices and covers a recent example of how surface cleaning impacts the long-term reliability of organic light-emitting diodes being commercialized for solid-state lighting.

Stability and characterization of large area polymer light-emitting diodes over extended periods

1999 ◽  
Vol 12 (2-3) ◽  
pp. 183-187 ◽  
Author(s):  
R.E Gill ◽  
P van de Weijer ◽  
C.T.H Liedenbaum ◽  
H.F.M Schoo ◽  
A Berntsen ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Large Area ◽  
Light Emitting ◽  
Polymer Light Emitting Diodes
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