Rubicene: a molecular fragment of C70 for use in organic field-effect transistors

2014 ◽  
Vol 2 (17) ◽  
pp. 3361-3366 ◽  
Author(s):  
Hyunbok Lee ◽  
Yue Zhang ◽  
Lei Zhang ◽  
Timothy Mirabito ◽  
Edmund K. Burnett ◽  
...  
Keyword(s):  
Ionization Energy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Molecular Fragment ◽  
Hole Injection ◽  
Organic Field Effect Transistors ◽  
High Ionization ◽  
Injection Barrier

The field-effect hole mobility of rubicene having high ionization energy (∼5.5 eV) is 0.20 cm2 V−1 s−1 and is improved to 0.32 cm2 V−1 s−1 with PFBT SAM treatment which reduces the hole injection barrier and induces an edge-on configuration.

Methoxylation of quinoidal bithiophene as a single regioisomer building block for narrow-bandgap conjugated polymers and high-performance organic field-effect transistors

2020 ◽  
Vol 8 (43) ◽  
pp. 15168-15174 ◽  
Author(s):  
Yunlong Sun ◽  
Yunpeng Zhang ◽  
Yang Ran ◽  
Longxian Shi ◽  
Qingsong Zhang ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
Building Block ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Methoxyl Group ◽  
Organic Field Effect Transistors ◽  
Narrow Bandgap

Methoxyl group was introduced to obtain isomer-free methoxylation quinoidal bithiophene building block. Four polymers displayed narrow bandgap (<1.20 eV) and hole mobility of up to 2.70 cm2 V−1 s−1.

Reduction of charge injection barrier by 1-nm contact oxide interlayer in organic field effect transistors

2012 ◽  
Vol 100 (1) ◽  
pp. 013303 ◽  
Author(s):  
Peter Darmawan ◽  
Takeo Minari ◽  
Akichika Kumatani ◽  
Yun Li ◽  
Chuan Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Organic Field Effect Transistors ◽  
Charge Injection Barrier ◽  
Injection Barrier

Charge transfer properties of phthalocyaninato zinc complexes for organic field-effect transistors: tuning semiconductor nature via peripheral substituents

2011 ◽  
Vol 15 (09n10) ◽  
pp. 964-972
Author(s):  
Ronghua Guo ◽  
Lijuan Zhang ◽  
Yuexing Zhang ◽  
Yongzhong Bian ◽  
Jianzhuang Jiang
Keyword(s):  
Charge Transfer ◽  
Field Effect ◽  
Density Functional ◽  
Field Effect Transistors ◽  
Electron Injection ◽  
Zinc Complexes ◽  
Hole Injection ◽  
Type Semiconductor ◽  
P Type ◽  
Injection Barrier

Density functional theory (DFT) calculations were carried out to investigate the semiconductor performance of a series of phthalocyaninato zinc complexes, namely Zn[Pc(β-OCH3)8] (1), ZnPc (2), and Zn[Pc(β-COOCH3)8] (3) {[ Pc(β-OCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxyphthalocyanine; Pc2- = dianion of phthalocyanine; [ Pc(β-COOCH3)8]2- = dianion of 2,3,9,10,16,17,23,24-octamethoxycarbonylphthalocyanine} for organic field effect transistor (OFET). The effect of peripheral substituents on tuning the nature of phthalocyaninato zinc semiconductor has been clearly revealed. Introduction of eight weak electron-donating methoxy groups onto the peripheral positions of ZnPc (2) leads to a decrease in the hole injection barrier relative to Au electrode and an increase in the electron injection barrier, making compound 1 a better p-type semiconductor material in comparison with 2. In contrast, peripheral methoxycarbonyl substitution depresses the energy level of LUMO and thus induces an increase for the electron affinity (EA) value of ZnPc (2), resulting in the change of semiconductor nature from p-type for ZnPc (2) to n-type for Zn[Pc(β-COOCH3)8] (3) due to the improved electron injection ability. The calculated charge transfer mobility for hole is 1.05 cm2.V-1.s-1 for 1 and 5.33 cm2.V-1.s-1 for 2, while that for electron is 0.16 cm2.V-1.s-1 for 3. The present work should be helpful for designing and preparing novel phthalocyanine semiconductors in particular with good n-type OFET performance.

Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors

2015 ◽  
Vol 3 (31) ◽  
pp. 8024-8029 ◽  
Author(s):  
Zhaoguang Li ◽  
Ji Zhang ◽  
Kai Zhang ◽  
Weifeng Zhang ◽  
Lei Guo ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Building Blocks ◽  
Organic Field Effect Transistors ◽  
Next Generation

Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene derivatives exhibiting a hole mobility of up to 0.25 cm2 V−1 s−1 show promise as useful building blocks to construct next-generation high performance organic semiconductors.

scholarly journals A Quinacridone-Diphenylquinoxaline-Based Copolymer for Organic Field-Effect Transistors

Polymers ◽  
2019 ◽  
Vol 11 (3) ◽  
pp. 563 ◽  
Author(s):  
Yong Jeong ◽  
Jeong Oh ◽  
Ho Song ◽  
Tae An
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Coupling Reaction ◽  
Hole Mobility ◽  
Organic Field Effect Transistors ◽  
Field Effect Mobility ◽  
X Ray Diffraction ◽  
Suzuki Coupling Reaction ◽  
X Ray ◽  
Heat Treated

In this work, we characterized poly(quinacridone-diphenylquinoxaline) (PQCTQx). PQCTQx was synthesized by a Suzuki coupling reaction and the synthesized PQCTQx was used as a polymeric semiconducting material in organic field-effect transistors (OFETs) to research the potential of using quinacridone derivatives. The measured field-effect mobility of the pristine PQCTQx film was 6.1 × 10−3 cm2/(V·s). A PQCTQx film heat-treated at 150 °C exhibited good field-effect performances with a hole mobility of 1.2 × 10−2 cm2/(V·s). The improved OFET behaviors resulting from the mild thermal treatment was attributed to improved packing of the molecules in the film, as determined using X-ray diffraction, and to decreased channel resistance.

scholarly journals H2S and NH3 Detection with Langmuir-Schaefer Monolayer Organic Field-Effect Transistors

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 935
Author(s):  
Alexey Sizov ◽  
Askold Trul ◽  
Victoria Chekusova ◽  
Oleg Borshchev ◽  
Alexey Vasiliev ◽  
...  
Keyword(s):  
Field Effect ◽  
Gas Sensing ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Electrical Performance ◽  
Organic Field Effect Transistors ◽  
Ambient Conditions ◽  
Long Term Stability ◽  
Sensing Technology ◽  
Low Concentrations

In this work gas sensing properties of Langmuir-Schaefer monolayer organic field-effect transistors (LS OFETs) prepared from organosilicon derivative of [1]benzothieno[3,2-b][1]-benzothiophene (BTBT) have been investigated. The monolayer has been deposited using Langmuir-Schaefer method, which results in a uniform low-defect monolayer with excellent electrical performance, hole mobility up to 7 × 10−2 cm2 V−1 s−1, the threshold voltage around 0 V and on-off ratio of 104. Developed sensors demonstrate a long-term stability of a half-year storage under ambient conditions. Preliminary investigations demonstrated that the LS OFETs give instantaneous response on ammonia and hydrogen sulfide at low concentrations. The results reported open new perspectives for the OFET-based gas-sensing technology.

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