Interface engineering for suppression of flat-band voltage shift in a solution-processed ZnO/polymer dielectric thin film transistor

2013 ◽  
Vol 1 (46) ◽  
pp. 7742 ◽  
Author(s):  
Kyongjun Kim ◽  
Eungkyu Lee ◽  
Joohee kim ◽  
Si Yun Park ◽  
Keon-Hee Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Interface Engineering ◽  
Solution Processed ◽  
Dielectric Thin Film ◽  
Voltage Shift ◽  
Polymer Dielectric

scholarly journals Characteristics of a Multiple-Layered Graphene Oxide Memory Thin Film Transistor with Gold Nanoparticle Embedded as Charging Elements

2021 ◽  
Vol 2021 ◽  
pp. 1-9
Author(s):  
Yo-Han Kim ◽  
Huynh Quoc Nguyen ◽  
Bum Jun Park ◽  
Hyun Ho Lee ◽  
Tae Seok Seo
Keyword(s):  
Thin Film ◽  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Flat Band ◽  
Threshold Voltage Shift ◽  
Au Nps ◽  
Voltage Shift ◽  
Reduced Graphene

In this study, we report the highest mobility in the reduced graphene oxide- (rGO-) based TFTs embedded with Au NPs. In addition, we fabricated a reduced graphene oxide memory device (rGO-capacitor), a reduced graphene oxide thin film transistor (rGO-TFT), and a reduced graphene oxide memory thin film transistor (rGO-MTFT) and characterized their electrical performances. While the rGO-TFT device was investigated for nonambipolar channel performance, the rGO-capacitor and rGO-MTFT were examined for nonvolatile memory capabilities in a metal-graphene-insulator-silicon (MGIS) structure. The incorporation of the gold nanoparticles (Au NPs) between the rGO and an insulator silicon dioxide (SiO2) layer served as a charging element. The rGO-capacitor revealed the memory effect of hysteretic capacitance-voltage (C-V) loops, and the flat-band voltage shift ( Δ V FB ) was measured as 0.1375 V after 100 s retention time. The rGO-TFT shows the p-channel characteristics with high hole mobility of 16.479 cm2/V⋅s. The threshold voltage shift ( Δ V th ) of the rGO-MTFT was detected as 5.74 V from 10 V to -30 V sweep, demonstrating high mobility of 22.887 cm2/V⋅s.

Instability in a-Si:H Thin-Film Transistor: A New Method to Discriminate Between Charge Injection and Defect Creation

1992 ◽  
Vol 258 ◽  
Author(s):  
P. Foglietti ◽  
G. Fortunato ◽  
L. Mariucci ◽  
V. Parisi
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Close Correlation ◽  
Gate Insulator ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Instability Mechanism ◽  
Insulator Interface ◽  
Different Temperatures

ABSTRACTIn the present work, in order to discriminate the main source of instability in a-Si:H TFTs, the determination of both threshold voltage and flat-band voltage has been performed after bias-stressing the devices with different gate voltages and at different temperatures. Flat-band voltage was determined by the space-charge photomodulation technique. From the close correlation observed between the two quantities, we conclude that the predominant instability mechanism is represented by change in the gate insulator charge at and near the semiconductor/insulator interface.

Analyzing the interface trap density in SiGe capacitors using an abnormal flat band voltage shift at low temperature

2020 ◽  
Vol 13 (11) ◽  
pp. 111006
Author(s):  
Li-Chuan Sun ◽  
Chih-Yang Lin ◽  
Po-Hsun Chen ◽  
Tsung-Ming Tsai ◽  
Kuan-Ju Zhou ◽  
...  
Keyword(s):  
Low Temperature ◽  
Trap Density ◽  
Flat Band ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Flat Band Voltage ◽  
Voltage Shift

Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

2011 ◽  
Vol 99 (6) ◽  
pp. 062108 ◽  
Author(s):  
Bosul Kim ◽  
Eugene Chong ◽  
Do Hyung Kim ◽  
Yong Woo Jeon ◽  
Dae Hwan Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Trap Density ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Induced Stress ◽  
Amorphous Ingazno
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