Molecular precursor derived and solution processed indium–zinc oxide as a semiconductor in a field-effect transistor device. Towards an improved understanding of semiconductor film composition

2013 ◽  
Vol 1 (14) ◽  
pp. 2577 ◽  
Author(s):  
Rudolf C. Hoffmann ◽  
Mareiki Kaloumenos ◽  
Silvio Heinschke ◽  
Emre Erdem ◽  
Peter Jakes ◽  
...  
2012 ◽  
Vol 100 (25) ◽  
pp. 253507 ◽  
Author(s):  
Pradipta K. Nayak ◽  
J. A. Caraveo-Frescas ◽  
Unnat. S. Bhansali ◽  
H. N. Alshareef

2020 ◽  
Vol 310 ◽  
pp. 127850 ◽  
Author(s):  
Sayani Palit ◽  
Kanishk Singh ◽  
Bih-Show Lou ◽  
Jim-Long Her ◽  
See-Tong Pang ◽  
...  

2021 ◽  
Vol 99 ◽  
pp. 106331
Author(s):  
Jaeyong Kim ◽  
Dongil Ho ◽  
In Soo Kim ◽  
Myung-Gil Kim ◽  
Kang-Jun Baeg ◽  
...  

Nano Letters ◽  
2016 ◽  
Vol 16 (2) ◽  
pp. 1293-1298 ◽  
Author(s):  
Pyo Jin Jeon ◽  
Young Tack Lee ◽  
June Yeong Lim ◽  
Jin Sung Kim ◽  
Do Kyung Hwang ◽  
...  

2020 ◽  
Vol 1 (2) ◽  
pp. 14-21
Author(s):  
Chaw Su Nandar Hlaing Chaw ◽  
Thiri Nwe

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.


Nanoscale ◽  
2018 ◽  
Vol 10 (8) ◽  
pp. 3613-3620 ◽  
Author(s):  
Nan Cui ◽  
Hang Ren ◽  
Qingxin Tang ◽  
Xiaoli Zhao ◽  
Yanhong Tong ◽  
...  

A fully transparent conformal organic thin-film field-effect transistor array is obtained based on an ultrathin embedded metal-grid electrode and a solution-processed C8-BTBT film.


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