scholarly journals Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

2012 ◽  
Vol 100 (25) ◽  
pp. 253507 ◽  
Author(s):  
Pradipta K. Nayak ◽  
J. A. Caraveo-Frescas ◽  
Unnat. S. Bhansali ◽  
H. N. Alshareef
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Oxide Thin Films ◽  
Solution Processed ◽  
Effect Transistor

Field-effect transistor performance of zinc oxide thin films derived from molecular based alkoxyalkyl zinc compounds

2011 ◽  
Vol 208 (7) ◽  
pp. 1708-1713 ◽  
Author(s):  
Rudolf C. Hoffmann ◽  
Stefan Dilfer ◽  
Alexander Issanin ◽  
Jörg J. Schneider
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Oxide Thin Films ◽  
Zinc Compounds ◽  
Effect Transistor

scholarly journals Solution-processed thin films of a charge transfer complex for ambipolar field-effect transistors

2019 ◽  
Vol 7 (33) ◽  
pp. 10257-10263 ◽  
Author(s):  
Tommaso Salzillo ◽  
Antonio Campos ◽  
Marta Mas-Torrent
Keyword(s):  
Thin Films ◽  
Charge Transfer ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Transfer Complex ◽  
Field Effect Transistors ◽  
Solution Processed ◽  
Effect Transistor ◽  
A Charge

Solution-deposited thin films of the charge transfer complex DBTTF–TCNQ blended with polystyrene lead to ambipolar field-effect transistor devices.

scholarly journals Hysteresis Behavior of the Donor–Acceptor-Type Ambipolar Semiconductor for Non-Volatile Memory Applications

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 301
Author(s):  
Young Jin Choi ◽  
Jihyun Kim ◽  
Min Je Kim ◽  
Hwa Sook Ryu ◽  
Han Young Woo ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Memory Device ◽  
Non Volatile Memory ◽  
Device Applications ◽  
Donor Acceptor ◽  
Effect Transistor ◽  
Volatile Memory ◽  
Memory Applications

Donor–acceptor-type organic semiconductor molecules are of great interest for potential organic field-effect transistor applications with ambipolar characteristics and non-volatile memory applications. Here, we synthesized an organic semiconductor, PDPPT-TT, and directly utilized it in both field-effect transistor and non-volatile memory applications. As-synthesized PDPPT-TT was simply spin-coated on a substrate for the device fabrications. The PDPPT-TT based field-effect transistor showed ambipolar electrical transfer characteristics. Furthermore, a gold nanoparticle-embedded dielectric layer was used as a charge trapping layer for the non-volatile memory device applications. The non-volatile memory device showed clear memory window formation as applied gate voltage increases, and electrical stability was evaluated by performing retention and cycling tests. In summary, we demonstrate that a donor–acceptor-type organic semiconductor molecule shows great potential for ambipolar field-effect transistors and non-volatile memory device applications as an important class of materials.

Solution-processed flexible nonvolatile organic field-effect transistor memory using polymer electret

2021 ◽  
Vol 99 ◽  
pp. 106331
Author(s):  
Jaeyong Kim ◽  
Dongil Ho ◽  
In Soo Kim ◽  
Myung-Gil Kim ◽  
Kang-Jun Baeg ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Organic Field Effect Transistor ◽  
Solution Processed ◽  
Effect Transistor

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

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