Microwave synthesis and field effect transistor performance of stable colloidal indium-zinc-oxide nanoparticles

RSC Advances ◽  
2013 ◽  
Vol 3 (43) ◽  
pp. 20071 ◽  
Author(s):  
Shawn Sanctis ◽  
Rudolf C. Hoffmann ◽  
Jörg J. Schneider
Keyword(s):  
Zinc Oxide ◽  
Microwave Synthesis ◽  
Zinc Oxide Nanoparticles ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Oxide Nanoparticles ◽  
Indium Zinc Oxide ◽  
Effect Transistor

scholarly journals Zinc diketonates as single source precursors for ZnO nanoparticles: microwave-assisted synthesis, electrophoretic deposition and field-effect transistor device properties

2016 ◽  
Vol 4 (30) ◽  
pp. 7345-7352 ◽  
Author(s):  
Rudolf C. Hoffmann ◽  
Shawn Sanctis ◽  
Emre Erdem ◽  
Stefan Weber ◽  
Jörg J. Schneider
Keyword(s):  
Zinc Oxide ◽  
Zinc Oxide Nanoparticles ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Microwave Assisted Synthesis ◽  
Oxide Nanoparticles ◽  
Single Source ◽  
Microwave Assisted ◽  
Effect Transistor ◽  
Device Properties

Variation of the ligand framework in 1,3-substituted zinc-diketonates provides a straightforward way to control size, morphology and electronic properties of semiconducting zinc oxide nanoparticles.

Ultrasensitive dopamine detection of indium-zinc oxide on PET flexible based extended-gate field-effect transistor

2020 ◽  
Vol 310 ◽  
pp. 127850 ◽  
Author(s):  
Sayani Palit ◽  
Kanishk Singh ◽  
Bih-Show Lou ◽  
Jim-Long Her ◽  
See-Tong Pang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Dopamine Detection ◽  
Indium Zinc Oxide ◽  
Effect Transistor

Black Phosphorus–Zinc Oxide Nanomaterial Heterojunction for p–n Diode and Junction Field-Effect Transistor

Nano Letters ◽  
2016 ◽  
Vol 16 (2) ◽  
pp. 1293-1298 ◽  
Author(s):  
Pyo Jin Jeon ◽  
Young Tack Lee ◽  
June Yeong Lim ◽  
Jin Sung Kim ◽  
Do Kyung Hwang ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Black Phosphorus ◽  
Effect Transistor

scholarly journals Analysis on Band Layer Design and J-V characteristics of Zinc Oxide Based Junction Field Effect Transistor

2020 ◽  
Vol 1 (2) ◽  
pp. 14-21
Author(s):  
Chaw Su Nandar Hlaing Chaw ◽  
Thiri Nwe
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Vital Role ◽  
Semiconductor Material ◽  
Mathematical Equations ◽  
Effect Transistor

This paper presents the band gap design and J-V characteristic curve of Zinc Oxide (ZnO) based on Junction Field Effect Transistor (JFET). The physical properties for analysis of semiconductor field effect transistor play a vital role in semiconductor measurements to obtain the high-performance devices. The main objective of this research is to design and analyse the band diagram design of semiconductor materials which are used for high performance junction field effect transistor. In this paper, the fundamental theory of semiconductors, the electrical properties analysis and bandgap design of materials for junction field effect transistor are described. Firstly, the energy bandgaps are performed based on the existing mathematical equations and the required parameters depending on the specified semiconductor material. Secondly, the J-V characteristic curves of semiconductor material are discussed in this paper. In order to achieve the current-voltage characteristic for specific junction field effect transistor, numerical values of each parameter which are included in analysis are defined and then these resultant values are predicted for the performance of junction field effect transistors. The computerized analyses have also mentioned in this paper.

Understanding charge trapping/detrapping at the zinc oxide (ZnO)/MAPbI3 perovskite interface in the dark and under illumination using a ZnO/perovskite/ZnO test platform

Nanoscale ◽  
2018 ◽  
Vol 10 (43) ◽  
pp. 20377-20383 ◽  
Author(s):  
Youngjun Kim ◽  
Byoungnam Park
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Lead Iodide ◽  
Test Platform ◽  
Interfacial Contact ◽  
Effect Transistor ◽  
Methylammonium Lead Iodide

We fabricated a zinc oxide (ZnO)/methylammonium lead iodide (MAPbI3) perovskite/ZnO field effect transistor (FET) test platform device through which ZnO/perovskite interfacial contact properties can be probed in the dark and under illumination.

Zinc oxide nanoparticles with surface modified by degradation of capping polymers in situ during microwave synthesis

2015 ◽  
Vol 26 (4) ◽  
pp. 1064-1071 ◽  
Author(s):  
Jakub Sedlák ◽  
Ivo Kuřitka ◽  
Michal Machovský ◽  
Pavol Šuly ◽  
Pavel Bažant ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Microwave Synthesis ◽  
Zinc Oxide Nanoparticles ◽  
Oxide Nanoparticles ◽  
Surface Modified
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