Adjustment of charge trap number and depth in molecular backbone to achieve tunable multilevel data storage performance

2013 ◽  
Vol 1 (12) ◽  
pp. 2320 ◽  
Author(s):  
Shifeng Miao ◽  
Yongxiang Zhu ◽  
Hao Zhuang ◽  
Xiaoping Xu ◽  
Hua Li ◽  
...  
Keyword(s):  
Data Storage ◽  
Multilevel Data ◽  
Charge Trap ◽  
Storage Performance ◽  
Molecular Backbone

Isomerization change and charge trap double mechanisms induced ternary data storage performance

2021 ◽  
Author(s):  
Huan Cao ◽  
Qijian Zhang ◽  
Hua Li ◽  
Jianmei Lu
Keyword(s):  
Electric Field ◽  
Data Storage ◽  
Small Molecule ◽  
Charge Trap ◽  
Storage Performance ◽  
Ternary Data

An azo-based small molecule (NACB) is designed with well-definite film crystallinity, and exhibits three different current states under a continuous electric field, which is owing to the cooperated isomerization change and charge trap mechanisms.

Research on Distributed Storage Technology Based on Mass Data

2014 ◽  
Vol 687-691 ◽  
pp. 2710-2713
Author(s):  
Jing Yang
Keyword(s):  
Data Storage ◽  
Distributed Storage ◽  
Rapid Development ◽  
Distributed Data ◽  
Distributed Environment ◽  
Environment Analysis ◽  
Distributed Data Storage ◽  
Storage Technology ◽  
Mass Data ◽  
Storage Performance

With the rapid development of computer technology and network technology, mass data store distributed and management pattern already received accepted extensively. Thus it can be seen malpractice obviously, data storage structure, storage environment are different and other problems such as data handing. The paper go into how improve data storage performance in the distributed environment, analysis the data storage technology at present and data storage performance in the distributed environment, summarize the claim of distributed storage database design, provide the theory in vacation distributed data storage performance standardization.

Al-Sb-Ge phase change material: A candidate for multilevel data storage with high-data retention and fast speed

2018 ◽  
Vol 157 ◽  
pp. 152-156 ◽  
Author(s):  
Yuan Xue ◽  
Sannian Song ◽  
Shuai Yan ◽  
Tianqi Guo ◽  
Zhitang Song ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
Data Storage ◽  
Multilevel Data ◽  
Data Retention ◽  
High Data ◽  
Fast Speed ◽  
Change Material

Multilevel Data Storage Memory Devices Based on the Controlled Capacitive Coupling of Trapped Electrons

2011 ◽  
Vol 23 (18) ◽  
pp. 2064-2068 ◽  
Author(s):  
Jang-Sik Lee ◽  
Yong-Mu Kim ◽  
Jeong-Hwa Kwon ◽  
Jae Sung Sim ◽  
Hyunjung Shin ◽  
...  
Keyword(s):  
Data Storage ◽  
Capacitive Coupling ◽  
Memory Devices ◽  
Multilevel Data ◽  
Trapped Electrons

Effects of gradual oxidation of aromatic sulphur-heterocycle derivatives on multilevel memory data storage performance

2015 ◽  
Vol 3 (9) ◽  
pp. 2033-2039 ◽  
Author(s):  
Zhaojun Liu ◽  
Erbo Shi ◽  
Yu Wan ◽  
Najun Li ◽  
Dongyun Chen ◽  
...  
Keyword(s):  
Small Molecules ◽  
Data Storage ◽  
Storage Performance ◽  
Multilevel Memory

Three symmetrical conjugated small molecules derived from phenothiazine (PTZ), PTZ-CN, PTZO-CN and PTZDO-CN, were designed and successfully synthesized for multilevel memory data storage.

scholarly journals Multilevel data storage memory based on polycrystalline SrTiO3 ultrathin film

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49753-49758 ◽  
Author(s):  
Pengfei Hou ◽  
Zhanzhan Gao ◽  
Kaikai Ni
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Ultrathin Film ◽  
Multilevel Data ◽  
Access Memory ◽  
Operation Speed ◽  
Commercial Interest ◽  
High Scalability

Resistive switching random access memory (RRAM) has recently inspired scientific and commercial interest due to its high operation speed, high scalability, and multilevel data storage potential.

Sign in / Sign up

Export Citation Format

Share Document