scholarly journals Multilevel data storage memory based on polycrystalline SrTiO3 ultrathin film

RSC Advances ◽  
2017 ◽  
Vol 7 (78) ◽  
pp. 49753-49758 ◽  
Author(s):  
Pengfei Hou ◽  
Zhanzhan Gao ◽  
Kaikai Ni
Keyword(s):  
Data Storage ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Ultrathin Film ◽  
Multilevel Data ◽  
Access Memory ◽  
Operation Speed ◽  
Commercial Interest ◽  
High Scalability

Resistive switching random access memory (RRAM) has recently inspired scientific and commercial interest due to its high operation speed, high scalability, and multilevel data storage potential.

Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory

2017 ◽  
Vol 28 (11) ◽  
pp. 115707 ◽  
Author(s):  
Fekadu Gochole Aga ◽  
Jiyong Woo ◽  
Jeonghwan Song ◽  
Jaehyuk Park ◽  
Seokjae Lim ◽  
...  
Keyword(s):  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Multilevel Data ◽  
Access Memory ◽  
Conductive Bridge

scholarly journals Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2085
Author(s):  
Lu Wang ◽  
Tianyu Yang ◽  
Dianzhong Wen
Keyword(s):  
Carbon Nanotubes ◽  
Data Storage ◽  
Indium Tin Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Device ◽  
Multilevel Data ◽  
Access Memory ◽  
Current Limit ◽  
Egg Albumen

In this paper, a tuneable multilevel data storage bioresistive memory device is prepared from a composite of multiwalled carbon nanotubes (MWCNTs) and egg albumen (EA). By changing the concentration of MWCNTs incorporated into the egg albumen film, the switching current ratio of aluminium/egg albumen:multiwalled carbon nanotubes/indium tin oxide (Al/EA:MWCNT/ITO) for resistive random access memory increases as the concentration of MWCNTs decreases. The device can achieve continuous bipolar switching that is repeated 100 times per cell with stable resistance for 104 s and a clear storage window under 2.5 × 104 continuous pulses. Changing the current limit of the device to obtain low-state resistance values of different states achieves multivalue storage. The mechanism of conduction can be explained by the oxygen vacancies and the smaller number of iron atoms that are working together to form and fracture conductive filaments. The device is nonvolatile and stable for use in rewritable memory due to the adjustable switch ratio, adjustable voltage, and nanometre size, and it can be integrated into circuits with different power consumption requirements. Therefore, it has broad application prospects in the fields of data storage and neural networks.

Broadband photoelectric tunable quantum dot based resistive random access memory

2020 ◽  
Vol 8 (6) ◽  
pp. 2178-2185 ◽  
Author(s):  
Zhiliang Chen ◽  
Yu Yu ◽  
Lufan Jin ◽  
Yifan Li ◽  
Qingyan Li ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Data Storage ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Multilevel Data ◽  
Access Memory ◽  
Storage Ability

Ultra-stable broadband photoelectric tunable PbS QD based RRAM device with flexibility and multilevel data storage ability was demonstrated.

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

2008 ◽  
Vol 93 (22) ◽  
pp. 223505 ◽  
Author(s):  
Jung Won Seo ◽  
Jae-Woo Park ◽  
Keong Su Lim ◽  
Ji-Hwan Yang ◽  
Sang Jung Kang
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory

Fabrication of Semi-transparent Resistive Random Access memory and Its Characteristics of Nonvolatile Resistive Switching

2011 ◽  
Vol 1292 ◽  
Author(s):  
Jung Won Seo ◽  
Seung Jae Baik ◽  
Sang Jung Kang ◽  
Koeng Su Lim
Keyword(s):  
Metal Oxide ◽  
Resistive Switching ◽  
Current Density ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Promising Candidate ◽  
Forward Current ◽  
Switching Characteristics

ABSTRACTThis report covers the resistive switching characteristics of cross-bar type semi-transparent (or see-through) resistive random access memory (RRAM) devices based on ZnO. In order to evaluate the transmittance of the devices, we designed the memory array with various electrode sizes and spaces between the electrodes. To prevent read disturbance problems due to sneak currents, we employed a metal oxide based p-NiO/n-ZnO diode structure, which exhibited good rectifying characteristics and high forward current density. Based on these results, we found that the combined metal oxide diode/RRAM device could be promising candidate with suppressed read disturbances of cross-bar type ZnO RRAM device.

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