scholarly journals Atomic layer deposition-based synthesis of photoactive TiO2 nanoparticle chains by using carbon nanotubes as sacrificial templates

RSC Advances ◽  
2014 ◽  
Vol 4 (23) ◽  
pp. 11648 ◽  
Author(s):  
Shaoren Deng ◽  
Sammy W. Verbruggen ◽  
Zhanbing He ◽  
Daire J. Cott ◽  
Philippe M. Vereecken ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tio2 Nanoparticle ◽  
Layer Deposition ◽  
Nanoparticle Chains

Direct formation of anatase TiO2nanoparticles on carbon nanotubes by atomic layer deposition and their photocatalytic properties

2016 ◽  
Vol 27 (40) ◽  
pp. 405702 ◽  
Author(s):  
Sheng-Hsin Huang ◽  
Shih-Yun Liao ◽  
Chih-Chieh Wang ◽  
Chi-Chung Kei ◽  
Jon-Yiew Gan ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Photocatalytic Properties ◽  
Layer Deposition ◽  
Direct Formation

Deposition of Pt Nanoparticles on Oxygen Plasma Treated Carbon Nanotubes by Atomic Layer Deposition

2019 ◽  
Vol 16 (2) ◽  
pp. 855-862 ◽  
Author(s):  
Yang-Chih Hsueh ◽  
Chia-Te Hu ◽  
Chih-Chieh Wang ◽  
Chueh Liu ◽  
Tsong-Pyng Perng
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Oxygen Plasma ◽  
Pt Nanoparticles ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Treated Carbon

scholarly journals Conformal High-K Dielectric Coating of Suspended Single-Walled Carbon Nanotubes by Atomic Layer Deposition

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1085 ◽  
Author(s):  
Kemelbay ◽  
Tikhonov ◽  
Aloni ◽  
Kuykendall
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Oxide Thickness ◽  
Ambient Conditions ◽  
Nucleation Layer ◽  
Layer Deposition ◽  
High K ◽  
High K Dielectric

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.

Polysulfide Anchoring Mechanism Revealed by Atomic Layer Deposition of V2O5 and Sulfur-Filled Carbon Nanotubes for Lithium–Sulfur Batteries

2017 ◽  
Vol 9 (8) ◽  
pp. 7185-7192 ◽  
Author(s):  
Rachel Carter ◽  
Landon Oakes ◽  
Nitin Muralidharan ◽  
Adam P. Cohn ◽  
Anna Douglas ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Lithium Sulfur Batteries ◽  
Lithium Sulfur

scholarly journals Copper oxide atomic layer deposition on thermally pretreated multi-walled carbon nanotubes for interconnect applications

2013 ◽  
Vol 107 ◽  
pp. 223-228 ◽  
Author(s):  
Marcel Melzer ◽  
Thomas Waechtler ◽  
Steve Müller ◽  
Holger Fiedler ◽  
Sascha Hermann ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Atomic Layer Deposition ◽  
Copper Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes
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