scholarly journals DNA Functionalization of Carbon Nanotubes for Ultrathin Atomic Layer Deposition of High κ Dielectrics for Nanotube Transistors with 60 mV/Decade Switching

2006 ◽  
Vol 128 (11) ◽  
pp. 3518-3519 ◽  
Author(s):  
Yuerui Lu ◽  
Sarunya Bangsaruntip ◽  
Xinran Wang ◽  
Li Zhang ◽  
Yoshio Nishi ◽  
...  
2016 ◽  
Vol 27 (40) ◽  
pp. 405702 ◽  
Author(s):  
Sheng-Hsin Huang ◽  
Shih-Yun Liao ◽  
Chih-Chieh Wang ◽  
Chi-Chung Kei ◽  
Jon-Yiew Gan ◽  
...  

2019 ◽  
Vol 16 (2) ◽  
pp. 855-862 ◽  
Author(s):  
Yang-Chih Hsueh ◽  
Chia-Te Hu ◽  
Chih-Chieh Wang ◽  
Chueh Liu ◽  
Tsong-Pyng Perng

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1085 ◽  
Author(s):  
Kemelbay ◽  
Tikhonov ◽  
Aloni ◽  
Kuykendall

As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. This is challenging due to the chemically inert surface of CNTs and a lack of nucleation sites—especially for defect-free CNTs. As a result, a technique that enables integration of uniform high-k dielectrics, while preserving the CNT’s exceptional properties is required. In this work, we show a method that enables conformal atomic layer deposition (ALD) of high-k dielectrics on defect-free CNTs. By depositing a thin Ti metal film, followed by oxidation to TiO2 under ambient conditions, a nucleation layer is formed for subsequent ALD deposition of Al2O3. The technique is easy to implement and is VLSI-compatible. We show that the ALD coatings are uniform, continuous and conformal, and Raman spectroscopy reveals that the technique does not induce defects in the CNT. The resulting bilayer TiO2/Al2O3 thin-film shows an improved dielectric constant of 21.7 and an equivalent oxide thickness of 2.7 nm. The electrical properties of back-gated and top-gated devices fabricated using this method are presented.


2017 ◽  
Vol 9 (8) ◽  
pp. 7185-7192 ◽  
Author(s):  
Rachel Carter ◽  
Landon Oakes ◽  
Nitin Muralidharan ◽  
Adam P. Cohn ◽  
Anna Douglas ◽  
...  

2013 ◽  
Vol 107 ◽  
pp. 223-228 ◽  
Author(s):  
Marcel Melzer ◽  
Thomas Waechtler ◽  
Steve Müller ◽  
Holger Fiedler ◽  
Sascha Hermann ◽  
...  

2012 ◽  
Vol 23 (40) ◽  
pp. 405603 ◽  
Author(s):  
Yang-Chih Hsueh ◽  
Chih-Chieh Wang ◽  
Chueh Liu ◽  
Chi-Chung Kei ◽  
Tsong-Pyng Perng

2015 ◽  
Vol 119 (6) ◽  
pp. 3379-3387 ◽  
Author(s):  
Yucheng Zhang ◽  
Carlos Guerra-Nuñez ◽  
Ivo Utke ◽  
Johann Michler ◽  
Marta D. Rossell ◽  
...  

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