Low-cost, Mo(S,Se)2-free superstrate-type solar cells fabricated with tunable band gap Cu2ZnSn(S1−xSex)4 nanocrystal-based inks and the effect of sulfurization

RSC Advances ◽  
2013 ◽  
Vol 3 (43) ◽  
pp. 19946 ◽  
Author(s):  
Chih-Liang Wang ◽  
Chih-Chieh Wang ◽  
B. Reeja-Jayan ◽  
Arumugam Manthiram
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Low Cost ◽  
Tunable Band Gap

Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review

2020 ◽  
Vol 20 (6) ◽  
pp. 3622-3635 ◽  
Author(s):  
Kuldeep S. Gour ◽  
Rahul Parmar ◽  
Rahul Kumar ◽  
Vidya N. Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Buffer Layer ◽  
Low Cost ◽  
Incident Light ◽  
High Resistivity ◽  
Short Wavelength Range ◽  
Absorber Material

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

Fullerene (PCBM) Modulated MEH-PPV Photoactive Material for Plastic Solar Cells

2019 ◽  
Vol 969 ◽  
pp. 439-443
Author(s):  
Ishwar Naik ◽  
Rajashekhar Bhajantri ◽  
B.S. Patil ◽  
Vinayak Bhat
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Polymer Matrix ◽  
Low Cost ◽  
Spectral Response ◽  
Weight Ratio ◽  
Acid Methyl Ester ◽  
Research Problem ◽  
Energy Difference ◽  
Low Efficiency

Abstract.Plastic solar cells are promising devices in looking for low cost and flexible energy storing devices. Low efficiency is the main drawback of these cells in comparison with inorganic solar cells and hence the search for an efficient plastic solar cell has become a globally demanded research problem. In the present work we have used the modified fullerene [6,6]-Phenyl C61 butyric acid methyl ester (PCBM) as N type modulating probe on P type semiconducting polymer Poly[2-methoxy-5-(2’-ethylhexyloxy)-phenylenevinylene] (MEH-PPV). The donor MEH-PPV polymer matrix is modulated by adding PCBM in the weight ratio 1:3, 1:1 and 3:1 in Chloro-Benzene(CB) as the common solvent and glass-coated samples are prepared by solution cast method. Samples are analyzed by UV-VISIBLE spectroscopy by JASCO UV Vis NIR V 670 spectrometer. The effect of PCBM content on MEH-PPV is to broaden the spectral response of MEH-PPV. In other words the acceptor PCBM has tuned the band gap (energy difference between HOMO & LUMO) of the donor MEH-PPV. Spectral analysis revealed that 1:3 blend of MEH-PPV with PCBM has a wide spectral sensitivity for absorption. The band gap for each blend is determined using Tauc’s plot. Increased Fullerene content has decreased the band gap of the host polymer. We conclude that modified fullerene can effectively modulate the donor polymer matrix and 1:3 MEH-PPV: PCBM can act as a good photoactive material for solar cells. Absorption can be further enhanced by either dye sensitization or by metal oxide nanoparticle doping without increasing the thickness of the film. We have doped the optimized 1:3 blend with 20%, 40% & 60% of TiO2 nanoparticles wherein the absorption is enhanced with doping level. The increased absorption is attributed to the photocatalytic activity of the nanaoparticles embedded in the polymer matrix

scholarly journals Effects of Sulfurization Temperature on Properties of CZTS Films by Vacuum Evaporation and Sulfurization Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jie Zhang ◽  
Bo Long ◽  
Shuying Cheng ◽  
Weibo Zhang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Crystallite Size ◽  
Low Cost ◽  
Band Gap Energy ◽  
Vacuum Evaporation ◽  
Glass Substrates ◽  
Sulfurization Temperature ◽  
Czts Thin Films

Copper zinc tin sulfur (CZTS) thin films have been extensively studied in recent years for their advantages of low cost, high absorption coefficient (≥104 cm−1), appropriate band gap (~1.5 eV), and nontoxicity. CZTS thin films are promising materials of solar cells like copper indium gallium selenide (CIGS). In this work, CZTS thin films were prepared on glass substrates by vacuum evaporation and sulfurization method. Sn/Cu/ZnS (CZT) precursors were deposited by thermal evaporation and then sulfurized in N2+ H2S atmosphere at temperatures of 360–560°C to produce polycrystalline CZTS thin films. It is found that there are some impurity phases in the thin films with the sulfurization temperature less than 500°C, and the crystallite size of CZTS is quite small. With the further increase of the sulfurization temperature, the obtained thin films exhibit preferred (112) orientation with larger crystallite size and higher density. When the sulfurization temperature is 500°C, the band gap energy, resistivity, carrier concentration, and mobility of the CZTS thin films are 1.49 eV, 9.37 Ω · cm,1.714×1017 cm−3, and 3.89 cm2/(V · s), respectively. Therefore, the prepared CZTS thin films are suitable for absorbers of solar cells.

Preparation of CuIn(SxSe1–x)2 thin films with tunable band gap by controlling sulfurization temperature of CuInSe2

2010 ◽  
Vol 25 (12) ◽  
pp. 2426-2429 ◽  
Author(s):  
Guangjun Wang ◽  
Gang Cheng ◽  
Binbin Hu ◽  
Xiaoli Wang ◽  
Shaoming Wan ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Band Gap ◽  
Low Cost ◽  
Chalcopyrite Structure ◽  
X Ray Diffraction ◽  
Large Area ◽  
X Ray ◽  
Sulfurization Temperature ◽  
Tunable Band Gap

In this paper, polycrystalline CuIn(SxSe1–x)2 thin films with tunable x and Eg (band gap) values were prepared by controlling the sulfurization temperature (T) of CuInSe2 thin films. X-ray diffraction indicated the CuIn(SxSe1–x)2 films exhibited a homogeneous chalcopyrite structure. When T increases from 150 to 500 °C, x increases from 0 to 1, and Eg increases from 0.96 to 1.43 eV. The relations between x and Eg and the sulfurization process of CuIn(SxSe1–x)2 thin films have been discussed. This work provides an easy and low-cost technique for preparing large area absorber layers of solar cell with tunable Eg.

scholarly journals Solution-Processed Chalcogenide Photovoltaic Thin Films

2021 ◽  
Author(s):  
Marcos Antonio Santana Andrade Junior ◽  
Hugo Leandro Sousa dos Santos ◽  
Mileny dos Santos Araujo ◽  
Arthur Corrado Salomão ◽  
Lucia Helena Mascaro
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Spin Coating ◽  
Low Cost ◽  
Spray Coating ◽  
Thin Film Solar Cells ◽  
Cost Ratio ◽  
Chalcogenide Thin Films ◽  
High Absorption Coefficient ◽  
Tunable Band Gap

Chalcogenides-based thin film solar cells are great competitors to beat high efficiencies as silicone solar cells. The chalcogenides that have been commonly used as absorber materials are CIS, CIGS, and CZTS. They present some advantages of having a direct and tunable band gap, high absorption coefficient and respectable efficiency to cost ratio. Solution processable deposition approaches for the fabrication of solar cells attracts a great deal attention due to its lower capital cost of the manufacturing than the vacuum-based techniques. In this chapter, we detail the use of a low-cost method of deposition for the chalcogenide thin films by spin-coating and spray-coating, which is already widely employed in several fields of industries.

A facile and low-cost synthesis of promising absorber materials on Cu2ZnSn(Sx,Se1−x)4 nanocrystals consisting of earth abundant elements with tunable band gap characteristics

2012 ◽  
Vol 22 (40) ◽  
pp. 21727 ◽  
Author(s):  
Seung Wook Shin ◽  
Jun Hee Han ◽  
Yeon Chan Park ◽  
G. L. Agawane ◽  
Chae Hwan Jeong ◽  
...  
Keyword(s):  
Band Gap ◽  
Low Cost ◽  
Earth Abundant ◽  
Gap Characteristics ◽  
Tunable Band Gap

scholarly journals Low-cost Fabrication of Tunable Band Gap Composite Indium and Gallium Nitrides

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Andrew McInnes ◽  
Jagdeep S. Sagu ◽  
Diana Mehta ◽  
K. G. U. Wijayantha
Keyword(s):  
Band Gap ◽  
Low Cost ◽  
Gallium Nitrides ◽  
Tunable Band Gap

Bright and efficient light-emitting diodes based on MA/Cs double cation perovskite nanocrystals

2017 ◽  
Vol 5 (25) ◽  
pp. 6123-6128 ◽  
Author(s):  
Bing Xu ◽  
Weigao Wang ◽  
Xiaoli Zhang ◽  
Wanyu Cao ◽  
Dan Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Yield ◽  
Band Gap ◽  
Light Emitting Diodes ◽  
Color Purity ◽  
High Quantum Yield ◽  
Light Emitting ◽  
Perovskite Nanocrystals ◽  
High Color Purity ◽  
Tunable Band Gap

A high quantum yield, tunable band gap, and high color purity of perovskite nanocrystals make this class of materials attractive for electronic and optoelectronic applications in devices including solar cells, photodetectors, and light emitting diodes.

scholarly journals A Review of Different Techniques for Improving the Performance of Amorphous Silicon based Solar Cells

2019 ◽  
Vol 01 (02) ◽  
pp. 172-181 ◽  
Author(s):  
Ahmed Idda ◽  
Leila Ayat ◽  
said Bentouba ◽  
◽  
◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Defect Density ◽  
Low Cost ◽  
Wide Band ◽  
Optimization Techniques ◽  
Absorber Layer ◽  
Window Layer

Hydrogeneted amorphous silicon (a-Si:H) based solar cells are promising candidates for future developments in the photovoltaic industry. In fact, amorphous silicon technology offers significant advantages including low cost fabrication and possibility to deposition on flexible substrat as well as low temperature fabrication. Much progress has been made since the first single junction cell in amorphous silicon made in 1976 by Carlson and Wronski. However, the performance of the solar cells based on a-Si:H is limited by the high defect density and degradation induced by exposure to light, or Staebler-Wronski effect. To become competitive, the performance of the solar cells based on a-Si:H must be improved. In order to improve the performance of a-Si:H solar cells, much research is directed to optimization techniques. The improvement in performance is therefore based on the optimization of the different layers of the solar cell, in particular, the window layer and the absorber layer (intrinsic). The aim of this work is to give an overview on the different techniques and strategies that is used to improve the performance of solar cell. This work is therefore focus in three main areas: first, optimization of window layer, in particular, the p/i interface using wide band gap alloys such as a-SiC:H, second development of high quality absorber layer using band gap engineering, and alloys such as a-SiGe:H. last, optimizing n-type layer and i/n interface.

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