Evidence from coadsorption studies for a molecular precursor state in the oxidation of Zn(0001)

Author(s):  
A. F. Carley ◽  
M. W. Roberts ◽  
Song Yan
1999 ◽  
Vol 567 ◽  
Author(s):  
H.-J. Müssig ◽  
J. Dabrowski ◽  
S. Hinrich

ABSTRACTWe report the first direct observation of dissociative chemisorption of oxygen molecules on a silicon surface at room temperature via a molecular precursor state. We link this to the fact that smooth oxide layers can be grown easily on Si(113). The process of initial oxidation is discussed in terms of surface diffusion paths and surface stress. First ab initiocalculations help elucidate the favored adsorption sites and the oxidation mechanism. Experimental evidence was found for bond geometries resulting in the quasi-epitaxial growth of a chemisorption layer on the substrate at elevated temperatures (600°C). In contrast to the first stages of Si(001) oxidation, neither defects nor the ejection of Si atoms plays a significant role during the initial oxidation of Si(113).


ChemInform ◽  
2014 ◽  
Vol 45 (25) ◽  
pp. no-no
Author(s):  
Irma N. Gonzalez-Jimenez ◽  
Almudena Torres-Pardo ◽  
Ana E. Sanchez-Pelaez ◽  
Angel Gutierrez ◽  
Mar Garcia-Hernandez ◽  
...  

1989 ◽  
Vol 40 (2) ◽  
pp. 1130-1145 ◽  
Author(s):  
U. Höfer ◽  
P. Morgen ◽  
W. Wurth ◽  
E. Umbach

2013 ◽  
Vol 52 (24) ◽  
pp. 14299-14308 ◽  
Author(s):  
Lidija Androš ◽  
Marijana Jurić ◽  
Jasminka Popović ◽  
Ana Šantić ◽  
Predrag Lazić ◽  
...  
Keyword(s):  

Sign in / Sign up

Export Citation Format

Share Document