Initial stages of oxygen adsorption on Si(111). II. The molecular precursor

1989 ◽  
Vol 40 (2) ◽  
pp. 1130-1145 ◽  
Author(s):  
U. Höfer ◽  
P. Morgen ◽  
W. Wurth ◽  
E. Umbach
Keyword(s):  
Oxygen Adsorption ◽  
Molecular Precursor

THE EFFECT OF OXYGEN ADSORPTION ON THE CONDUCTIVITY OF PBTE FILMS.

2020 ◽  
Vol 6 (8(77)) ◽  
pp. 21-23
Author(s):  
S.N. Sarmasov ◽  
R.Sh. Rahimov ◽  
T.Sh. Abdullayev
Keyword(s):  
Spectral Region ◽  
Current Flow ◽  
Oxygen Adsorption ◽  
Tunneling Mechanism ◽  
Pn Junction ◽  
Flow Through ◽  
Pn Junctions ◽  
Effect Of Oxygen

The effect of oxygen adsorption on the conductivity of PbTe films is studied. Pn junctions based on PbTe films are photosensitive in the IR spectral region with a maximum photosensitivity of 𝜆𝑚𝑎𝑥 microns. The tunneling mechanism of current flow through the pn junction is shown.

Oxygen Adsorption-Induced Morphological Evolution of Hägg Iron Carbide at High Oxygen Chemical Potentials

2021 ◽  
Vol 125 (5) ◽  
pp. 3055-3065
Author(s):  
Ya Bai ◽  
Jinjia Liu ◽  
Pengju Ren ◽  
Wenping Guo ◽  
Tao Wang ◽  
...  
Keyword(s):  
Morphological Evolution ◽  
Iron Carbide ◽  
Oxygen Adsorption ◽  
High Oxygen ◽  
Chemical Potentials

Atomically Smooth Ultrathin Oxide Layers on SI(113)

1999 ◽  
Vol 567 ◽  
Author(s):  
H.-J. Müssig ◽  
J. Dabrowski ◽  
S. Hinrich
Keyword(s):  
Elevated Temperatures ◽  
Oxidation Mechanism ◽  
Dissociative Chemisorption ◽  
Initial Oxidation ◽  
Precursor State ◽  
Oxide Layers ◽  
Adsorption Sites ◽  
Molecular Precursor ◽  
Diffusion Paths ◽  
Ultrathin Oxide

ABSTRACTWe report the first direct observation of dissociative chemisorption of oxygen molecules on a silicon surface at room temperature via a molecular precursor state. We link this to the fact that smooth oxide layers can be grown easily on Si(113). The process of initial oxidation is discussed in terms of surface diffusion paths and surface stress. First ab initiocalculations help elucidate the favored adsorption sites and the oxidation mechanism. Experimental evidence was found for bond geometries resulting in the quasi-epitaxial growth of a chemisorption layer on the substrate at elevated temperatures (600°C). In contrast to the first stages of Si(001) oxidation, neither defects nor the ejection of Si atoms plays a significant role during the initial oxidation of Si(113).

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