Ba4Ta2O9 Oxide Prepared from an Oxalate-Based Molecular Precursor—Characterization and Properties

2013 ◽  
Vol 52 (24) ◽  
pp. 14299-14308 ◽  
Author(s):  
Lidija Androš ◽  
Marijana Jurić ◽  
Jasminka Popović ◽  
Ana Šantić ◽  
Predrag Lazić ◽  
...  
Keyword(s):  
Molecular Precursor

Atomically Smooth Ultrathin Oxide Layers on SI(113)

1999 ◽  
Vol 567 ◽  
Author(s):  
H.-J. Müssig ◽  
J. Dabrowski ◽  
S. Hinrich
Keyword(s):  
Elevated Temperatures ◽  
Oxidation Mechanism ◽  
Dissociative Chemisorption ◽  
Initial Oxidation ◽  
Precursor State ◽  
Oxide Layers ◽  
Adsorption Sites ◽  
Molecular Precursor ◽  
Diffusion Paths ◽  
Ultrathin Oxide

ABSTRACTWe report the first direct observation of dissociative chemisorption of oxygen molecules on a silicon surface at room temperature via a molecular precursor state. We link this to the fact that smooth oxide layers can be grown easily on Si(113). The process of initial oxidation is discussed in terms of surface diffusion paths and surface stress. First ab initiocalculations help elucidate the favored adsorption sites and the oxidation mechanism. Experimental evidence was found for bond geometries resulting in the quasi-epitaxial growth of a chemisorption layer on the substrate at elevated temperatures (600°C). In contrast to the first stages of Si(001) oxidation, neither defects nor the ejection of Si atoms plays a significant role during the initial oxidation of Si(113).

ChemInform Abstract: Synthesis of 4H-SrMnO3.0Nanoparticles from a Molecular Precursor and Their Topotactic Reduction Pathway Identified at Atomic Scale.

ChemInform ◽  
2014 ◽  
Vol 45 (25) ◽  
pp. no-no
Author(s):  
Irma N. Gonzalez-Jimenez ◽  
Almudena Torres-Pardo ◽  
Ana E. Sanchez-Pelaez ◽  
Angel Gutierrez ◽  
Mar Garcia-Hernandez ◽  
...  
Keyword(s):  
Atomic Scale ◽  
Molecular Precursor

Initial stages of oxygen adsorption on Si(111). II. The molecular precursor

1989 ◽  
Vol 40 (2) ◽  
pp. 1130-1145 ◽  
Author(s):  
U. Höfer ◽  
P. Morgen ◽  
W. Wurth ◽  
E. Umbach
Keyword(s):  
Oxygen Adsorption ◽  
Molecular Precursor

Selective formation of cubic or tetragonal zirconia thin films of transparent, with no use of metal ion stabilizer by heating molecular precursor films under mild conditions

2021 ◽  
Vol 14 (02) ◽  
pp. 2151012
Author(s):  
Natangue Heita Shafudah ◽  
Hiroki Nagai ◽  
Mitsunobu Sato
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quartz Glass ◽  
Glass Substrate ◽  
Metal Ion ◽  
Tetragonal Zirconia ◽  
Precursor Film ◽  
Quartz Glass Substrate ◽  
Molecular Precursor ◽  
Zirconia Thin Film

Cubic or tetragonal zirconia thin films of transparent and 100 nm thickness were selectively formed on a quartz glass substrate by heat-treating the molecular precursor films involving Zr(IV) complexes of nitrilotriacetic acid, at 500[Formula: see text]C in air for 1 h. A precursor solution was prepared by a reaction of the ligand and zirconium tetrabutoxide in alcohol under the presence of butylamine. By the addition of H2O2 or H2O into the solution, the spin-coated precursor films were converted to cubic zirconia thin films by the abovementioned procedure. Further, the identical phase was produced also in the case of the electro-sprayed precursor film which was formed by an addition of H2O2 into the solution. On the other hand, the tetragonal zirconia thin film was obtained from a precursor film formed by using a solution dissolving the original Zr(IV) complex of the ligand, without H2O2 nor H2O. The crystal structure of all thin films was determined by using both the X-ray diffraction (XRD) patterns and Raman spectra. Thus, the zirconia thin films of both crystals could be facilely and selectively obtained with no use of hetero-metal ion stabilizers. The XPS spectra of the thin films show that the O/Zr ratio of the cubic phase is 1.37 and slightly larger than tetragonal one (1.29), and also demonstrate that the nitrogen atoms, which may contribute to stabilize these metastable phases at room temperature, of about 5−7 atomic% was remained in the resultant thin films. The adhesion strengths of cubic zirconia thin film onto the quartz glass substrate was 68 MPa and larger than that of tetragonal one, when the precursor films were formed via a spin coating process. The optical and surface properties of the thin films were also examined in relation to the crystal systems.

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