Chemical vapor deposition derived flexible graphene paper and its application as high performance anodes for lithium rechargeable batteries

2013 ◽  
Vol 1 (2) ◽  
pp. 408-414 ◽  
Author(s):  
Guoqing Ning ◽  
Chenggen Xu ◽  
Yanming Cao ◽  
Xiao Zhu ◽  
Zhimin Jiang ◽  
...  
Author(s):  
zhikun zhang ◽  
lianlian xia ◽  
Lizhao Liu ◽  
Yuwen Chen ◽  
zuozhi wang ◽  
...  

Large surface roughness, especially caused by the large particles generated during both the transfer and the doping processes of graphene grown by chemical vapor deposition (CVD) is always a critical...


2015 ◽  
Vol 27 (48) ◽  
pp. 8119-8119 ◽  
Author(s):  
Xing Zhou ◽  
Lin Gan ◽  
Wenming Tian ◽  
Qi Zhang ◽  
Shengye Jin ◽  
...  

2007 ◽  
Vol 124-126 ◽  
pp. 1063-1066 ◽  
Author(s):  
Jin O Song ◽  
Heung Taek Shim ◽  
Dong Jin Byun ◽  
Joong Kee Lee

Effects of substrate temperature and phosphor doping on electrochemical characteristics of the silicon film anode were investigated. The silicon thin films were synthesized directly on copper foil by radio-frequency capacitively coupled plasma-enhanced chemical-vapor deposition (r.f.-CVD). The cyclability of the silicon anode greatly depends on the surface morphology and surface resistivity. The silicon film anodes which have granular structure and high conductivity showed higher cyclabilty than those of planer and low conductivity, respectively.


2014 ◽  
Vol 2 (44) ◽  
pp. 18742-18745 ◽  
Author(s):  
Matthew R. Leyden ◽  
Luis K. Ono ◽  
Sonia R. Raga ◽  
Yuichi Kato ◽  
Shenghao Wang ◽  
...  

Coatings ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 11
Author(s):  
Ren-Da Fu ◽  
Che Kai Chang ◽  
Ming-Yueh Chuang ◽  
Tai-Hong Chen ◽  
Shao-Kai Lu ◽  
...  

In this study, pairs of the organosilicon/silicon oxynitride (SiOxNy) barrier structures with an ultralow water vapor transmittance rate (WVTR) were consecutively prepared by the plasma-enhanced chemical vapor deposition at a low temperature of 70 °C using the tetramethylsilane (TMS) monomer and the TMS-oxygen-ammonia gas mixture, respectively. The thickness of the SiOxNy film in the barrier structure was firstly designed by optimizing its effective permeability. The WVTR was further decreased by inserting an adequate thickness of the organosilicon layer as the stress residing in the barrier structure was released accordingly. By prolonging the diffusion pathway for water vapor permeation, three-paired organosilicon/SiOxNy multilayered barrier structure with a WVTR of about 10−5 g/m2/day was achievable for meeting the requirement of the thin film encapsulation on the organic light emitting diode.


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