Effect of stress state on the domain configuration and switching behavior in ferroelectric thin films

RSC Advances ◽  
2012 ◽  
Vol 2 (31) ◽  
pp. 11901 ◽  
Author(s):  
Manoj Narayanan ◽  
Mengchun Pan ◽  
Shanshan Liu ◽  
Sheng Tong ◽  
Seungbum Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Stress State ◽  
Ferroelectric Thin Films ◽  
Switching Behavior ◽  
Domain Configuration

Temperature dependence of ferroelectricity and domain switching behavior in Pb(Zr0·3Ti0.7)O3 ferroelectric thin films

2019 ◽  
Vol 45 (14) ◽  
pp. 18030-18036 ◽  
Author(s):  
Xi Chen ◽  
Xiaojun Qiao ◽  
Liaoyuan Zhang ◽  
Jing Zhang ◽  
Qicheng Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Domain Switching ◽  
Ferroelectric Thin Films ◽  
Switching Behavior

Computer Simulation Study of the Effect of Defects on Switching in Ferroelectric Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
Robert D. Pugh ◽  
Michael J. Sabochick ◽  
Theodore E. Luke
Keyword(s):  
Thin Films ◽  
Computer Simulation ◽  
Monte Carlo ◽  
Monte Carlo Method ◽  
Ferroelectric Materials ◽  
Ferroelectric Thin Films ◽  
Computational Method ◽  
Switching Behavior ◽  
Computer Simulation Study ◽  
Dynamic Simulations

ABSTRACTA new computational method for simulating the dynamics of switching in ferroelectric materials is presented. The new method is shown to be more realistic for dynamic simulations and computationally more efficient than the traditional Monte Carlo method. The method is used to investigate the effect of polar defects on switching behavior. The results are in qualitative agreement with experimental observations of fatigue.

Domain configuration and interface structure analysis of sol-gel-derived PZT ferroelectric thin films

2001 ◽  
Vol 32 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Dage Liu ◽  
Chen Wang ◽  
Hongxi Zhang ◽  
Junwei Li ◽  
Liancheng Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Structure Analysis ◽  
Sol Gel ◽  
Interface Structure ◽  
Ferroelectric Thin Films ◽  
Domain Configuration ◽  
Pzt Ferroelectric Thin Films

Stresses in Ferroelectric Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Stress State ◽  
Tensile Stress ◽  
Deposition Temperature ◽  
Ferroelectric Thin Films ◽  
Film Stress ◽  
Deposition Pressure ◽  
Temperature Deposition ◽  
Low Pressures ◽  
Elastic Coefficients

ABSTRACTThe stresses in rf sputtered BaTiO3 thin films, deposited on both Si and sapphire single crystals, were studied. From the measured total film stress values, both the intrinsic stresses in the film and the elastic coefficients [Ef/(1–vf)] of the film were obtained. BaTiO3 films can be obtained in any stress state (tensile, stress free or compressive) by varying the deposition temperature, deposition pressure, and substrate. At lower temperatures and pressures compressive intrinsic stresses were observed whereas, at high deposition temperatures and pressures intrinsic stresses were tensile in nature. The [Ef/(1–vf)] value approached the single crystal value for films deposited at low pressures and decreased significantly with increasing deposition pressure.

Probing the origins of electroresistance switching behavior in ferroelectric thin films

2019 ◽  
Vol 115 (24) ◽  
pp. 242901 ◽  
Author(s):  
Zhong-Qi Ren ◽  
Yan-Dong Liu ◽  
Si-Yao Bao ◽  
Nan Yang ◽  
Ni Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
Switching Behavior

SrBi2Nb2O9 ferroelectric thin films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-225-Pr9-228
Author(s):  
J. H. Yi ◽  
P. Thomas ◽  
M. Manier ◽  
J. P. Mercurio ◽  
I. Jauberteau ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films
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