Stresses in Ferroelectric Thin Films

1990 ◽  
Vol 200 ◽  
Author(s):  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Stress State ◽  
Tensile Stress ◽  
Deposition Temperature ◽  
Ferroelectric Thin Films ◽  
Film Stress ◽  
Deposition Pressure ◽  
Temperature Deposition ◽  
Low Pressures ◽  
Elastic Coefficients

ABSTRACTThe stresses in rf sputtered BaTiO3 thin films, deposited on both Si and sapphire single crystals, were studied. From the measured total film stress values, both the intrinsic stresses in the film and the elastic coefficients [Ef/(1–vf)] of the film were obtained. BaTiO3 films can be obtained in any stress state (tensile, stress free or compressive) by varying the deposition temperature, deposition pressure, and substrate. At lower temperatures and pressures compressive intrinsic stresses were observed whereas, at high deposition temperatures and pressures intrinsic stresses were tensile in nature. The [Ef/(1–vf)] value approached the single crystal value for films deposited at low pressures and decreased significantly with increasing deposition pressure.

POLARIZATION CHANGE OF PZTN FERROELECTRIC THIN FILMS UNDER UNIFORM IN-PLANE TENSILE STRESS

2007 ◽  
Vol 95 (1) ◽  
pp. 117-127 ◽  
Author(s):  
H. ZHU ◽  
D. P. CHU ◽  
N. A. FLECK ◽  
I. PANE ◽  
J. E. HUBER ◽  
...  
Keyword(s):  
Thin Films ◽  
Tensile Stress ◽  
Ferroelectric Thin Films ◽  
Polarization Change

Optimization of the Fabrication Parameters of PZT 52/48 Thin Films by Pulsed Laser Ablation

2006 ◽  
Vol 514-516 ◽  
pp. 1353-1357 ◽  
Author(s):  
José R. A. Fernandes ◽  
Ednan Joanni ◽  
Raluca Savu
Keyword(s):  
Thin Films ◽  
Deposition Temperature ◽  
Structural Changes ◽  
Ferroelectric Properties ◽  
Strong Dependence ◽  
Michelson Interferometer ◽  
Pulsed Laser ◽  
Processing Parameters ◽  
Deposition Pressure ◽  
Pzt Films

Thin films of PbZr0,52Ti0,48O3 (PZT) for applications in piezoelectric actuators were deposited by the pulsed laser deposition technique (PLD) over Pt/Ti/SiO2/Si substrates. The effect of different electrode and PZT deposition and processing conditions on the ferroelectric and piezoelectric properties of the devices was investigated. X-Ray diffraction results showed that the deposition temperature for the electrodes had a strong influence on the PZT orientation; the increase in the electrode deposition temperature changes the PZT orientation from random or (111) to (001) depending also on PZT deposition pressure. From scanning electron microscope (SEM) pictures one could also observe that the deposition pressure affects the porosity of the PZT films, which increases with the pressure above 1×10-1 mbar for films deposited at room temperature. The measurement of the ferroelectric hysteresis curves confirmed that the structural changes induced by different processing parameters affected the ferroelectric properties of the material. The best ferroelectric properties including fatigue endurance were obtained for electrodes made at high temperature and for PZT deposited at 2×10-2 mbar and heat treated at 675°C for 30 minutes in an oxygen atmosphere. The piezoelectric coefficient d33, measured using a Michelson interferometer, had values in the range between 20 and 60 pm/V, and showed a strong dependence on the thickness of the PZT films.

Influence of deposition temperature on microstructure and electrical properties of modified (Ba, Sr)TiO3 ferroelectric thin films

2015 ◽  
Vol 41 ◽  
pp. S520-S525 ◽  
Author(s):  
Dongxu Yan ◽  
Lizhu Luo ◽  
Yongbin Zhang ◽  
Zhihang Peng ◽  
Hong Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Deposition Temperature ◽  
Ferroelectric Thin Films

Experimental Research on Preparation of SiN Films by Magnetron Sputtering

2014 ◽  
Vol 960-961 ◽  
pp. 208-211
Author(s):  
Zai Yu Zhang ◽  
Jian Jun Yang ◽  
Yan Hui Wu
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Experimental Research ◽  
Deposition Temperature ◽  
Optimal Parameter ◽  
Deposition Pressure ◽  
Power Deposition ◽  
Sputtering Power ◽  
Temperature Deposition ◽  
Si Wafer

In this paper, the SiN film was deposited on Si wafer, and the deposition rate of the SiN film was discussed with different parameters such as the sputtering power, deposition temperature, deposition pressure and ratio of N2/(N2+Ar). The result showed that the optimal parameter for SiN film were 60W, 300°C, 2.5% and 1Pa, respectively.

Composition Control of Lead or Bismuth Based Ferroelectric Thin Films Prepared by Sputtering Method

1995 ◽  
Vol 403 ◽  
Author(s):  
K. Yamakawa ◽  
S. Trolier-McKinstry ◽  
J. P. Dougherty
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Negative Ions ◽  
Ferroelectric Thin Films ◽  
Self Control ◽  
Lead Target ◽  
Composition Control ◽  
Oxygen Ions ◽  
Excess Lead ◽  
Low Pressures

AbstractComposition control in lead or bismuth based ferroelectric thin films was studied for rf magnetron, dc magnetron and ion beam sputter depositions with metal or oxide targets. For room temperature depositions, (1) control of the target surfaces, (2) suppression of harmful effects from negative ions and (3) control of oxygen content in the films were significant. The surface of the lead target gradually degrades and alters the lead flux extracted from the target. At low pressures resputtering from the film occurs by negative oxygen ions. It is necessary to put more oxygen into the films in the sputter depositions with metal targets and the ion beam sputter depositions. For high temperature depositions, a composition self control was observed for films deposited in excess lead environments.

Effect of stress state on the domain configuration and switching behavior in ferroelectric thin films

RSC Advances ◽  
2012 ◽  
Vol 2 (31) ◽  
pp. 11901 ◽  
Author(s):  
Manoj Narayanan ◽  
Mengchun Pan ◽  
Shanshan Liu ◽  
Sheng Tong ◽  
Seungbum Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Stress State ◽  
Ferroelectric Thin Films ◽  
Switching Behavior ◽  
Domain Configuration

Room-Temperature Deposition of Silicon Thin Films by RF Magnetron Sputtering

2012 ◽  
Vol 576 ◽  
pp. 543-547 ◽  
Author(s):  
Shaiful Bakhtiar Hashim ◽  
Norhidayatul Hikmee Mahzan ◽  
Sukreen Hana Herman ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Glass Substrate ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Deposition Pressure ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Temperature Deposition

Silicon thin film was successfully deposited on glass substrate using Radio frequency (RF) magnetron sputtering. The effect of deposition pressure on the physical and structural properties of thin films on the glass substrate was studied. The film thickness and deposition rate decreased with decreasing deposition pressure. Field emission scanning electron microscopy (FESEM) shows as the deposition pressure increased, the surface morphology transform from concise structured to not closely pack on the surface. Raman spectroscopy result showed that the peak was around 508 cm-1, showing that the thin film is nanocrystalline instead of polycrystalline silicon.

SrBi2Nb2O9 ferroelectric thin films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-225-Pr9-228
Author(s):  
J. H. Yi ◽  
P. Thomas ◽  
M. Manier ◽  
J. P. Mercurio ◽  
I. Jauberteau ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films
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