A Mathematical Description of the Switching Behavior of Ferroelectric Thin Films for FRAM Applications

2002 ◽  
Vol 48 (1) ◽  
pp. 255-262 ◽  
Author(s):  
Fan Chu
2019 ◽  
Vol 45 (14) ◽  
pp. 18030-18036 ◽  
Author(s):  
Xi Chen ◽  
Xiaojun Qiao ◽  
Liaoyuan Zhang ◽  
Jing Zhang ◽  
Qicheng Zhang ◽  
...  

1990 ◽  
Vol 200 ◽  
Author(s):  
Robert D. Pugh ◽  
Michael J. Sabochick ◽  
Theodore E. Luke

ABSTRACTA new computational method for simulating the dynamics of switching in ferroelectric materials is presented. The new method is shown to be more realistic for dynamic simulations and computationally more efficient than the traditional Monte Carlo method. The method is used to investigate the effect of polar defects on switching behavior. The results are in qualitative agreement with experimental observations of fatigue.


RSC Advances ◽  
2012 ◽  
Vol 2 (31) ◽  
pp. 11901 ◽  
Author(s):  
Manoj Narayanan ◽  
Mengchun Pan ◽  
Shanshan Liu ◽  
Sheng Tong ◽  
Seungbum Hong ◽  
...  

2019 ◽  
Vol 115 (24) ◽  
pp. 242901 ◽  
Author(s):  
Zhong-Qi Ren ◽  
Yan-Dong Liu ◽  
Si-Yao Bao ◽  
Nan Yang ◽  
Ni Zhong ◽  
...  

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-225-Pr9-228
Author(s):  
J. H. Yi ◽  
P. Thomas ◽  
M. Manier ◽  
J. P. Mercurio ◽  
I. Jauberteau ◽  
...  

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document