In situnitrogen-doped graphene grown from polydimethylsiloxane by plasma enhanced chemical vapor deposition

Nanoscale ◽  
2013 ◽  
Vol 5 (2) ◽  
pp. 600-605 ◽  
Author(s):  
Chundong Wang ◽  
Yungang Zhou ◽  
Lifang He ◽  
Tsz-Wai Ng ◽  
Guo Hong ◽  
...  
ACS Nano ◽  
2014 ◽  
Vol 8 (4) ◽  
pp. 3337-3346 ◽  
Author(s):  
Yoshikazu Ito ◽  
Christos Christodoulou ◽  
Marco Vittorio Nardi ◽  
Norbert Koch ◽  
Hermann Sachdev ◽  
...  

Carbon ◽  
2016 ◽  
Vol 96 ◽  
pp. 448-453 ◽  
Author(s):  
Sachin M. Shinde ◽  
Emi Kano ◽  
Golap Kalita ◽  
Masaki Takeguchi ◽  
Ayako Hashimoto ◽  
...  

2016 ◽  
Vol 68 (11) ◽  
pp. 1257-1261 ◽  
Author(s):  
Hyonkwang Choi ◽  
Hyung-Ho Jo ◽  
Sookhyun Hwang ◽  
Minhyon Jeon ◽  
Jong-Ho Kim

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 700 ◽  
Author(s):  
Hua-Fei Li ◽  
Fan Wu ◽  
Chen Wang ◽  
Pei-Xin Zhang ◽  
Hai-Yan Hu ◽  
...  

3D hybrid nanostructures connecting 1D carbon nanotubes (CNTs) with 2D graphene have attracted more and more attentions due to their excellent chemical, physical and electrical properties. In this study, we firstly report a novel and facile one-step process using template-directed chemical vapor deposition (CVD) to fabricate highly nitrogen doped three-dimensional (3D) N-doped carbon nanotubes/N-doped graphene architecture (N-CNTs/N-graphene). We used nickel foam as substrate, melamine as a single source for both carbon and nitrogen, respectively. The morphology and microstructure were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, isothermal analyses, X-ray photoelectron microscopy and Raman spectra. The obtained 3D N-CNTs/N-graphene exhibits high graphitization, a regular 3D structure and excellent nitrogen doping and good mesoporosity.


2013 ◽  
Vol 25 (9) ◽  
pp. 1490-1495 ◽  
Author(s):  
Mattia Cattelan ◽  
Stefano Agnoli ◽  
Marco Favaro ◽  
Denis Garoli ◽  
Filippo Romanato ◽  
...  

2015 ◽  
Vol 15 (7) ◽  
pp. 4883-4886 ◽  
Author(s):  
Mekan Ovezmyradov ◽  
Igor V. Magedov ◽  
Liliya V. Frolova ◽  
Gary Chandler ◽  
Jill Garcia ◽  
...  

MRS Advances ◽  
2019 ◽  
Vol 4 (3-4) ◽  
pp. 211-216 ◽  
Author(s):  
Ryoko Furukawa ◽  
Yuno Yamamoto ◽  
Yoji Nabei ◽  
Shunji Bandow

AbstractEither boron or nitrogen doped multilayered graphene was prepared by thermal chemical vapor deposition (CVD). Obtained heteroatom doped graphene was examined by Raman scattering, x-ray photo electron spectroscopy (XPS) and temperature dependence of sheet resistance. From the Raman scattering, obvious increase of ID/IG ratio could not be detected by boron doping, while it increased by ∼0.2 or more for nitrogen doped sample. From XPS, doping rates of boron and nitrogen were estimated to be in the range of 5∼12 at% and 1∼2 at%, respectively. XPS also showed that the boron and nitrogen atoms would locate at the doping sites of both graphitic and neighborhood of atomic defect. Magnitude of sheet resistance was decreased by either doping of boron or nitrogen.


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