Microscopic View on a Chemical Vapor Deposition Route to Boron-Doped Graphene Nanostructures

2013 ◽  
Vol 25 (9) ◽  
pp. 1490-1495 ◽  
Author(s):  
Mattia Cattelan ◽  
Stefano Agnoli ◽  
Marco Favaro ◽  
Denis Garoli ◽  
Filippo Romanato ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Doped Graphene ◽  
Graphene Nanostructures

Chemical Vapor Deposition of Phosphorous- and Boron-Doped Graphene Using Phenyl-Containing Molecules

2015 ◽  
Vol 15 (7) ◽  
pp. 4883-4886 ◽  
Author(s):  
Mekan Ovezmyradov ◽  
Igor V. Magedov ◽  
Liliya V. Frolova ◽  
Gary Chandler ◽  
Jill Garcia ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Doped Graphene

Synthesis of Boron-Doped Graphene Monolayers Using the Sole Solid Feedstock by Chemical Vapor Deposition

Small ◽  
2013 ◽  
Vol 9 (8) ◽  
pp. 1316-1320 ◽  
Author(s):  
Huan Wang ◽  
Yu Zhou ◽  
Di Wu ◽  
Lei Liao ◽  
Shuli Zhao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Boron Doped ◽  
Doped Graphene

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Rapid thermal chemical vapor deposition of in-situ boron doped polycrystalline SIxGe1-x

1992 ◽  
Vol 21 (1) ◽  
pp. 61-64 ◽  
Author(s):  
M. Sanganeria ◽  
D. T. Grider ◽  
M. C. öztürk ◽  
J. J. Wortman
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Boron Doped
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