Doping of boron or nitrogen to multilayered graphene grown on copper by thermal chemical vapor deposition of methane and vapor of phenylboronic acid or melamine

MRS Advances ◽  
2019 ◽  
Vol 4 (3-4) ◽  
pp. 211-216 ◽  
Author(s):  
Ryoko Furukawa ◽  
Yuno Yamamoto ◽  
Yoji Nabei ◽  
Shunji Bandow

AbstractEither boron or nitrogen doped multilayered graphene was prepared by thermal chemical vapor deposition (CVD). Obtained heteroatom doped graphene was examined by Raman scattering, x-ray photo electron spectroscopy (XPS) and temperature dependence of sheet resistance. From the Raman scattering, obvious increase of ID/IG ratio could not be detected by boron doping, while it increased by ∼0.2 or more for nitrogen doped sample. From XPS, doping rates of boron and nitrogen were estimated to be in the range of 5∼12 at% and 1∼2 at%, respectively. XPS also showed that the boron and nitrogen atoms would locate at the doping sites of both graphitic and neighborhood of atomic defect. Magnitude of sheet resistance was decreased by either doping of boron or nitrogen.

Carbon ◽  
2016 ◽  
Vol 96 ◽  
pp. 448-453 ◽  
Author(s):  
Sachin M. Shinde ◽  
Emi Kano ◽  
Golap Kalita ◽  
Masaki Takeguchi ◽  
Ayako Hashimoto ◽  
...  

Nanomaterials ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 700 ◽  
Author(s):  
Hua-Fei Li ◽  
Fan Wu ◽  
Chen Wang ◽  
Pei-Xin Zhang ◽  
Hai-Yan Hu ◽  
...  

3D hybrid nanostructures connecting 1D carbon nanotubes (CNTs) with 2D graphene have attracted more and more attentions due to their excellent chemical, physical and electrical properties. In this study, we firstly report a novel and facile one-step process using template-directed chemical vapor deposition (CVD) to fabricate highly nitrogen doped three-dimensional (3D) N-doped carbon nanotubes/N-doped graphene architecture (N-CNTs/N-graphene). We used nickel foam as substrate, melamine as a single source for both carbon and nitrogen, respectively. The morphology and microstructure were characterized by scanning electron microscopy, transmission electron microscopy, X-ray diffraction, isothermal analyses, X-ray photoelectron microscopy and Raman spectra. The obtained 3D N-CNTs/N-graphene exhibits high graphitization, a regular 3D structure and excellent nitrogen doping and good mesoporosity.


Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1173 ◽  
Author(s):  
L. G. Bulusheva ◽  
V. E. Arkhipov ◽  
K. M. Popov ◽  
V. I. Sysoev ◽  
A. A. Makarova ◽  
...  

Heteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and methane-phosphine mixture, respectively. The electronic structure of the films transferred onto SiO2/Si wafers by wet etching of copper substrates is studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy using a synchrotron radiation source. Annealing in an ultra-high vacuum at ca. 773 K allows for the removal of impurities formed on the surface of films during the synthesis and transfer procedure and changes the chemical state of nitrogen in nitrogen-doped graphene. Core level XPS spectra detect a low n-type doping of graphene film when nitrogen or phosphorous atoms are incorporated in the lattice. The electrical sheet resistance increases in the order: graphene < P-graphene < N-graphene. This tendency is related to the density of defects evaluated from the ratio of intensities of Raman peaks, valence band XPS and NEXAFS spectroscopy data.


2014 ◽  
Vol 802 ◽  
pp. 180-185 ◽  
Author(s):  
Nazir M. Santos ◽  
Tatiane M. Arantes ◽  
Neidênei G. Ferreira ◽  
Mauricio R. Baldan

The purpose of this work is to study the structural and morphological modification of the surface of the n-type diamond electrodes as a function of nitrogen doping. The characterizations of these electrodes were made using Raman Spectroscopy, Contact Angle, X-ray diffraction and Scanning Electron Microscopy (SEM). The nitrogen-doped diamond (NDD) electrodes were produced using Hot Filament-assisted Chemical Vapor Deposition method (HFCVD) from methane, hydrogen and nitrogen in the gas mixture. The results from Raman spectroscopy show that the diamond films obtained with nitrogen addition presented one large band at 1100-1700 cm-1. The SEM images showed that the variation in the nitrogen doping influenced the growth rate of films by promoting changes in the sizes of grains from microcrystalline to nanocrystalline texture. This behavior supported the results obtained from X-ray diffraction analyses. It was possible to verify a decrease in the crystallite size as a function of the nitrogen increase.


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