Simultaneous enhancement of the carrier mobility and luminous efficiency through thermal annealing a molecular glass material and device

2012 ◽  
Vol 22 (40) ◽  
pp. 21502 ◽  
Author(s):  
Shanfeng Xue ◽  
Liang Yao ◽  
Suijun Liu ◽  
Cheng Gu ◽  
Fangzhong Shen ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Carrier Mobility ◽  
Luminous Efficiency ◽  
Glass Material ◽  
Molecular Glass

Fluorescent Molecular Glass Based on Hexadehydrotribenzo[12]annulene

2021 ◽  
Author(s):  
Yotaro Kasahara ◽  
Ichiro Hisaki ◽  
Tomoyuki Akutagawa ◽  
Takashi Takeda
Keyword(s):  
Glass Material ◽  
Molecular Glass

We prepared octylbenzoate-substituted [12]DBA (C8[12]DBA) as an organic molecular glass material. Even with a central large, planar π unit of [12]DBA, which is generally advantageous for the formation of a...

Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Kumar ◽  
P.I. Widenborg ◽  
H. Hidayat ◽  
Qiu Zixuan ◽  
A.G. Aberle
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Dopant Activation ◽  
Hall Effect Measurements ◽  
Probe Measurements

ABSTRACTThe effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n+ and p+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p+ SPC poly-Si thin films. A very high Hall mobility of 71 cm2/Vs for n+ poly-Si and 35 cm2/Vs for p+ poly-Si at the carrier concentration of 2×1019 cm-3 and 4.5×1019 cm-3, respectively, were obtained.

Effects of Post Thermal Annealing on the Electrical Properties of Vertical Type Organic Thin Film Transistors Using Poly(3-hexylthiophene) and Its Application in Organic Light Emitting Transistor

2008 ◽  
Vol 8 (9) ◽  
pp. 4881-4884
Author(s):  
Se Young Oh ◽  
Sun Kak Hwang ◽  
Young Do Kim ◽  
Jong Wook Park ◽  
In Nam Kang
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Carrier Mobility ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Static Characteristics ◽  
Electrically Conductive ◽  
Light Emitting ◽  
Organic Light ◽  
Type Transistor

We have fabricated the vertical type organic thin film transistor (OTFT) using electrically conductive poly(3-hexylthiophene) (P3HT) as a p-type organic material. Effects of post thermal annealing and thickness of active layer on the performance of vertical type transistors were investigated. Especially, the correlation between carrier mobility of P3HT after post thermal annealing and static characteristics of the transistor was studied. Carrier mobility was calculated by space charge limited current (SCLC) model from the I–V curves of the prepared device. The vertical type OTFT after post thermal annealing at 120 °C (Tg) showed high current of 0.383 mA and on–off ratio of 22.5 at a low gate voltage of +2.0 V. Additionally, we report on emission characteristics from the vertical type transistor using P3HT.

Rapid Thermal Annealing of InP Implanted with Group IV Eleients

1993 ◽  
Vol 300 ◽  
Author(s):  
M.C. Ridgway ◽  
P Kringhoj
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Annealing Temperature ◽  
Group Iv ◽  
Electrical Activation ◽  
Temperature Range ◽  
Group Iv Elements

ABSTRACTElectrical activation and carrier mobility have been studied as a function of ion dose and annealing temperature for InP implanted with Group IV elements (Si, Ge and Sn). In general, electrical activation increases with decreasing ion dose and/or increasing annealing temperature. Si and Sn exhibit comparable activation and mobility, superior to that of Ge, over the ion dose and temperature range examined. The relative influences of implantation-induced non-stoichiometry and the amphoteric behaviour of the group IV elements have been investigated. For the latter, the amphoteric behavior of Ge > Si > Sn.

scholarly journals Electrical Properties and Thermal Annealing Effects of Polycrystalline MoS2-MoSX Nanowalls Grown by Sputtering Deposition Method

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 351
Author(s):  
Doo-Seung Um ◽  
Mi-Jin Jin ◽  
Jong-Chang Woo ◽  
Dong-Pyo Kim ◽  
Jungmin Park ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thermal Annealing ◽  
Carrier Mobility ◽  
Deposition Time ◽  
Electronic Device ◽  
Sputtering Deposition ◽  
Low Bandgap ◽  
Semiconductor Behavior ◽  
Annealing Effects ◽  
Device Applications

Straightforward growth of nanostructured low-bandgap materials is a key issue in mass production for electronic device applications. We report here facile nanowall growth of MoS2-MoSX using sputter deposition and investigate the electronic properties of the nanowalls. MoS2-MoSX nanowalls become gradually thicker and taller, with primarily (100)-plane growth directions, with increasing deposition time. Nanowalls combine with nearby walls when a rapid thermal annealing (RTA, 200 °C–500 °C) process is applied. All samples have conventional low-bandgap semiconductor behavior with exponential resistance increase as measurement temperature decreases. The 750 nm-thick MoS2-MoSX nanowalls have a sheet carrier mobility of up to 2 cm2·V−1·s−1 and bulk carrier concentration of ~1017–1019 cm−3 range depending on RTA temperature. Furthermore, perpendicular field-dependent magnetoresistance at 300 K shows negative magnetoresistance behavior, which displays resistance decay by applying a magnetic field (MR ratio in the −1 % range at 5 T). Interestingly, 400 °C RTA treated samples show a resistance upturn when applying an external magnetic field of more than 3 T. Our research suggests tuneability of MoS2 nanowall size and mesoscopic electronic transport properties.

scholarly journals Synergistic Effects of Processing Additives and Thermal Annealing on Nanomorphology and Hole Mobility of Poly(3-hexylthiophene) Thin Films

Polymers ◽  
2019 ◽  
Vol 11 (1) ◽  
pp. 112 ◽  
Author(s):  
Min Park ◽  
Felix Kim
Keyword(s):  
Charge Carrier ◽  
Thermal Annealing ◽  
Organic Solar Cells ◽  
Carrier Mobility ◽  
Morphological Changes ◽  
Synergistic Effects ◽  
Diphenyl Ether ◽  
Hole Mobility ◽  
Charge Carrier Mobility ◽  
Molecular Ordering

Control of the nanoscale molecular ordering and charge-carrier mobility of poly(3-hexylthiophene-2,5-diyl) (P3HT) was achieved by the combined use of processing additives and thermal annealing. Evaluation of four processing additives (1,8-octanedithiol (ODT), diphenyl ether (DPE), 1-chloronaphthalene (CN), and 1,8-diiodooctane (DIO), which are commonly used for the fabrication of organic solar cells, revealed that the nanoscale molecular ordering and, therefore, the charge-carrier mobility, are largely affected by the additives, as demonstrated by spectral absorption, X-ray diffraction, and atomic force microscopy. Thermal annealing selectively influenced the morphological changes, depending on the solubility of P3HT in the additive at high temperature. In the case of CN, in which P3HT can be dissolved at moderate temperature, significant molecular ordering was observed even without thermal annealing. For DIO, in which P3HT is only soluble at elevated temperature, the mobility reached 1.14 × 10−1 cm2 V−1 s−1 only after annealing. ODT and DPE were not effective as processing additives in a single-component P3HT. This study provides insight for designing the processing conditions to control the morphology and charge-transport properties of polymers.

scholarly journals Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate

AIP Advances ◽  
2016 ◽  
Vol 6 (11) ◽  
pp. 115303 ◽  
Author(s):  
Charith Jayanada Koswaththage ◽  
Tatsuya Okada ◽  
Takashi Noguchi ◽  
Shinichi Taniguchi ◽  
Shokichi Yoshitome
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Glass Substrate ◽  
Carrier Mobility ◽  
High Carrier Mobility ◽  
High Carrier
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